制造工艺流程的英文

• manufacturing process flow

• "制造"英文翻译    make; manufacture; produce
• "工艺流程"英文翻译    process flow; technological ...
• "工艺流程" 英文翻译 :    process flow; schedule drawing; technical process; technological chain; technological process; work flow
• "工艺流程表" 英文翻译 :    process chart
• "工艺流程卡" 英文翻译 :    engineering flow sheer
• "工艺流程热" 英文翻译 :    process heat
• "工艺流程图" 英文翻译 :    efd; engineering flow sheet; flow process chart; flow scheme; pfd process flow diagram; process flow chart; process flow sheet; process flowsheet; route sheet; technological flow sheet
• "工艺流程简述" 英文翻译 :    brief description of the process
• "工艺流程卡片" 英文翻译 :    flow process card
• "工艺流程设计" 英文翻译 :    process design
• "工艺流程图解" 英文翻译 :    process flow diagram
• "工艺流程优化" 英文翻译 :    process optimization
• "生产工艺流程" 英文翻译 :    technical process of production; technological process of production
• "施工工艺流程" 英文翻译 :    construction technology process
• "脱水工艺流程" 英文翻译 :    dehydration process
• "主要工艺流程" 英文翻译 :    master schedule
• "装卸工艺流程" 英文翻译 :    handling technological process; technological process of cargo handling
• "制造工艺" 英文翻译 :    fabrication process; fabrication technology; manufacture process; manufacturing engineering; manufacturing process; manufacturing technique; processing technique; workmanship
• "制造工艺卡" 英文翻译 :    fabrication di atch; fabrication dispatch
• "氨装置工艺流程图" 英文翻译 :    process flow diagram for ammonia plant
• "变动工艺流程分析" 英文翻译 :    variation flow analysis
• "发酵工艺流程图" 英文翻译 :    process flow diagram for fermentation
• "钢筋加工工艺流程" 英文翻译 :    rebar processing procedures
• "工序图, 工艺流程图" 英文翻译 :    process charts
• "工艺流程及布置图" 英文翻译 :    process flow diagram and layout

• The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software . the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately . the maximum power density of 4h - sic mesfet is as high as 19 . 22w / mm . at the same time , the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed .
  论文分析建立了4h - sicmosfet和mesfet器件的结构模型和物理模型，采用二维器件模拟软件medici对4h - sicmosfet和mesfet的输出特性进行了模拟分析，研究了温度和结构参数对器件特性的影响，表明两种器件的击穿特性均没有负阻现象，击穿电压分别达到85v和209v ，由此得到4h - sicmesfet最大功率密度可达到19 . 22w mm ；同时，研究了sic场效应晶体管的制作工艺，初步得到了一套制造sicmosfet器件的制造工艺流程，研制出了4h - sicmosfet器件。