刻蚀系统的英文

• dry etchers system

• "刻蚀"英文翻译    sculpture; corrosion; mechan ...
• "系统"英文翻译    system
• "防蚀系统" 英文翻译 :    anticorrosive system
• "腐蚀系统" 英文翻译 :    corroding system
• "带锌阳极防蚀系统" 英文翻译 :    zinc anode cathodic protection system
• "活性离子腐蚀系统" 英文翻译 :    reactive ion etch system
• "刻蚀" 英文翻译 :    [地质学] sculpture; corrosion; mechanical erosion◇刻蚀法 etching method
• "接头阴极接地防腐蚀系统" 英文翻译 :    joint cathodic protection system
• "蚀系数" 英文翻译 :    eclipse factor
• "干刻蚀" 英文翻译 :    dry etching
• "光刻蚀" 英文翻译 :    photoengraving; photoetching
• "浸蚀；刻蚀" 英文翻译 :    etching
• "刻蚀法" 英文翻译 :    etching method
• "刻蚀环" 英文翻译 :    etched rings
• "刻蚀剂" 英文翻译 :    etchant; etching agent
• "磨蚀；刻蚀" 英文翻译 :    corrasion
• "酸刻蚀" 英文翻译 :    acid etch
• "冲蚀系数" 英文翻译 :    washout coefficient
• "点蚀系数" 英文翻译 :    pitting factor
• "腐蚀系数" 英文翻译 :    coefficient of corrosion; corrosion coefficient; corrosion efficiency; etch factor; etching factor
• "缓蚀系数" 英文翻译 :    coefficient of corrosion inhibition
• "浸蚀系数" 英文翻译 :    erosion factor
• "空蚀系数" 英文翻译 :    cavitation coefficient
• "孔蚀系数" 英文翻译 :    cavitation coefficient; pitting factor
• "耐蚀系数" 英文翻译 :    coefficient of chemical resistance

• All these has provided us with scientific basis for designing the chamber of icp etching system and selecting the appropriate etching samples
  这些结论为设计icp刻蚀系统的反应室、选择合适的刻蚀工艺提供了科学的根据。
• At present , feas have potential for use as an electron source in a wide variety of applications , including microwave power amplifiers ( such as twts , klystron ) , flat panel displays , electron microscopy , and electron beam lithography
  目前,场致发射阵列阴极的应用领域十分广泛,主要包括微波器件(应用于twts , klystron等) 、平板显示器( feds ) 、电子显微镜及电子束刻蚀系统等。其中,应用研究的焦点主要集中在平板显示器和射频功率放大器。
• A set of icp etching system has been designed and manufactured through the analysis of the probe diagnosed results . during the study of the system , the emphasis is laid on the matching problem of icp coupled antenna via the rf matching device and rf power source
  通过对探针诊断结果的分析，设计并制作一套icp刻蚀系统，重点研究icp耦合天线通过射频匹配器与射频功率源的匹配问题，得到很好的匹配效果，在射频输出功率为500w以内时，反射功率小于10w 。
• When the output power of the rf is within 500w and the reflection power is within 10w , a good matching effect can be gained . insb - in material in the icp etching system is etched by chc1f2 plasma . through the sem analysis of the etching result , it can be observed that the sidewall is smooth , flat and anisotropic
  在自制的icp干法刻蚀系统中用chclf _ 2等离子体对insb - in材料实现了干法刻蚀，通过对刻蚀样品的sem分析，观察到刻蚀后的侧壁光滑平整，有良好的各向异性。