原子对的英文

• atom pair

• "原子"英文翻译    atom
• "对"英文翻译    answer; reply
• "原子对峙" 英文翻译 :    atomic confrontation
• "空位－溶质原子对" 英文翻译 :    vacancy solute atom pairs
• "原子对象模型" 英文翻译 :    atomic object model
• "原子" 英文翻译 :    [化学] [物理学] atom 标记原子 labelled atom; 原子爆炸 atomic explosion; atomic blast; 原子单位 atomic unit; 原子电池atomic battery [cell];原子动力 atomic power; 原子动力舰 atompowered ship; 原子堆 atomic pile; 原子讹诈 atomic blackmail; 原子发动机 atom engine; 原子反应堆 atomic reactor [pile]; 原子防护 atomic defence; 原子价 atomicity; valence; valency; 原子论 atomology; atomic theory; atomism; 原子炮 atomic gun; 原子碰撞 atomic collision; 原子数 atomicity; 原子武器 atomic weapon; 原子序数 atomic number; “z” number; 原子战争 atomic war; 原子钟 atomic clock; atomichron
• "电子对" 英文翻译 :    doublet; duplet; electron pair; electron-pair; electronic pair; internal(-conversion) pair
• "端子对" 英文翻译 :    set of terminals; terminal pair
• "离子对" 英文翻译 :    [核物理] ion pair◇离子对反相色谱法 ion-pair reversed-phase chromatography; 离子对效应 ion-pair effect
• "因子对" 英文翻译 :    factor pair
• "子对话" 英文翻译 :    subdialogue
• "子对象" 英文翻译 :    child object; selector2; sub-objects; subobject
• "孤电子对,未共电子对" 英文翻译 :    line electron pair
• "未共电子对；孤电子对" 英文翻译 :    lone pair
• "靶子对准" 英文翻译 :    alignment of target
• "变换算子对" 英文翻译 :    transform operator pair
• "标量轻子对" 英文翻译 :    scalar lepton pairs
• "超子对产生" 英文翻译 :    hyperon pair production
• "成键电子对" 英文翻译 :    bond electron pair; bonding pair
• "初级离子对" 英文翻译 :    primary ion pair
• "电子对，电子偶" 英文翻译 :    electron pair
• "电子对产生" 英文翻译 :    pair production; pairproduction
• "电子对给体" 英文翻译 :    electron pair donor; epd
• "电子对互斥" 英文翻译 :    electron pair repulsion
• "电子对键" 英文翻译 :    covalent bond; electro airbond; electron pair bond; electron-pair bond; electron-pair linkage

• Presumably both the very small size and activating influence of fluorine atoms contribute to this exception .
  这大概是由于氟原子半径小和活性高这两个原因的影响，氟原子对这种例外做出了贡献。
• The study of the effect of helium atom on hydrogen molecule by molecular intrinsic characteristic contour theory
  理论研究氦原子对氢分子特征轮廓的影响
• Based on schr ? dinger equation we obtain the vigorous result of phase - coherent electronic transport through a single interface in quasi - one - dimension electron waveguide
  本文研究了电子波导中单个杂质原子对电流分布的影响，基于薛定谔方程，得到了电子在准一维电子波导中单个杂质所在界面处的精确的相位相干电子输运图像。
• A theoretical calculation based on this model is carried out , and the results verify that the vacancies may reduce the mean binding energy of the er atoms , and thus the model is energetically favorable
  结果证明与表面空位为硅二聚物所占情况相比，表面空位存在时体系的能量更低。此结果间接证明了铒原子对模型的合理性。
• Based on the further study by the scedng tunneling microscopy ( stm ) investigation , a sthce structural model wth the formation of the pair - like er adatom rows is adopted to replace the previously suggested single er adatom model to explain the ( 4x2 ) reconsmiction
  5至1个单层铒原子的硅( 001 )衬底上，经低温退火后观察到了( 4 2 )再构。通过对该现象的进一步的扫描隧道显微镜研究，建立起了基于铒吸附原子对的模型来解释该再构。
• We study the time evolution law of the atomic response in an open - type inversionless lasing system when the probe or driving field is off - resonance , and compare the law with that obtained when the probe and driving fields are resonant . we find that the detuning has considerable effects on the time evolution law : when the probe or driving fields is off - resonance , the dispersive responses for the probe and driving fields are no longer 0 and the two - photon coherence is no longer a pure real ; the variation of the probe detuning can make the time evolution law of the population distributions and the gain ( absorbtion ) of the driving field changing obviously ; with detuning increasing , the time evolution behavior of the gain ( absorbtion ) , dispersion of the probe field and the two - photon coherence will gradually diviate from the evolution law of the standard damped oscillator ; with the driving detuning increasing , the oscillating time of the dispersion of the driving field becomes longer , the amplitude and the stationary value increase
  研究了探测场或驱动场失谐情况下开放的型无粒子数反转激光系统中原子响应的时间演化规律,并与探测场和驱动场都共振时的演化规律进行了比较.我们发现失谐对时间演化规律有显著的影响;当驱动场或探测场失谐时,原子对探测场和驱动场色散的响应不再为零,双光子相干不再是纯实量;探测场失谐的变化将使粒子布居和驱动场增益(吸收)的时间演化规律明显改变;随着失谐的增大,探测场增益(吸收) 、色散和双光子相干随时间的演化行为逐渐偏离标准阻尼振子的演化规律;驱动场色散驱动场失谐量的增加而振荡时间变长,振幅和稳定值变大
• The properties of cn thin films such as their morphology , component , crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed , showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique , , the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed . the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process , based on this the growth mode of cn thin films on the si substrate is proposed . the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted , which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
  采用pld技术进行了碳氮化合物薄膜沉积，得到了含氮量为21at的cn薄膜；研究了衬底温度和反应气体压强对薄膜结构特性的影响，给出了cn薄膜中n含量较小、 sp ~ 3键合结构成分较少和薄膜中仅含有局域cn晶体的原因；引入脉冲辉光放电等离子体增强pld的气相反应，给出了提高薄膜晶态sp ~ 3键合结构成分和薄膜的含n量可行性途径；应用pe - cvd技术以ch _ 4 + n _ 2为反应气体并引入辅助气体h _ 2 ，得到了含n量为56at的晶态cn薄膜；探讨了cn薄膜形貌、成分、晶体结构、价键状态等特性及其与气体压强和放电电流的关系，证明了- c _ 3n _ 4薄膜沉积为满足动力学平衡条件的各种反应过程的竞争结果；采用光学发射谱技术对cn薄膜生长过程进行了实时诊断，得到了实验参量对等离子体中活性粒子相对浓度和气相反应过程的影响规律，给出了cn薄膜沉积的主要反应前驱物，揭示了cn薄膜特性和等离子体内反应过程之间的联系；采用高气压pe - pld技术研究了不同衬底温度条件下cn化合物薄膜的结构特性，揭示了si原子对薄膜生长过程的影响，给出了si基表面碳氮薄膜的生长模式；在金刚石研磨和催化剂fe处理的si衬底上进行cn薄膜沉积，证明了通过控制材料表面动力学条件可以改变碳氮薄膜结构特性，并可显著提高晶态碳氮材料的生长速率。
• The electrochemical impedance spectroscopy of nickel electrodeposition indicates that nickel electrodeposition occurs in two steps , the medium frequency inductive loop is ascribed to the relaxation of the electrode coverage by an adsorbed intermediate such as niohads , the low frequency capacitive loop may be due to the inhibition of nickel electrodeposition by adsorbed hydrogen . the mechanism and equivalent circuit of nickel electrodeposition were proposed on the basis of the analysis of electrochemical impedance spectroscopy
  不锈钢电极上电积镍的电化学阻抗行为表明氨络合物体系镍电沉积过程是二次放电过程，中频感抗弧是由于中间吸附产物nioh _ ( ads )的弛豫现象引起，低频容抗弧可能是由于吸附氢原子对镍结晶的阻滞作用引起，依据实验结果提出了氨络合物体系镍电沉积的反应机理和等效电路模型。

• 原子对的日语：げんしつい