反向漏电流的英文

• back leakage current

• "反向"英文翻译    opposite direction; reverse; ...
• "漏电"英文翻译    leakage of electricity; leak ...
• "正向漏电流" 英文翻译 :    forward leakage current
• "反向泄漏电流" 英文翻译 :    reverse leakage current
• "漏电流" 英文翻译 :    current drain; drain current; leak current; leakage current; tracking current
• "逆向漏泄电流" 英文翻译 :    current, reverse leak; reverse leak current
• "表面漏电流" 英文翻译 :    tracking current
• "低泄漏电流" 英文翻译 :    low leakage current
• "反接漏电流" 英文翻译 :    inverse drain current
• "漏电电流" 英文翻译 :    leakage current
• "旁漏电流" 英文翻译 :    bleeder current; leakage current
• "入地漏电流" 英文翻译 :    earth leakage current
• "泄漏电流" 英文翻译 :    leak current; leakage current
• "栅漏电流" 英文翻译 :    gate leak current
• "直流漏电流" 英文翻译 :    d-c leakage current
• "对地漏电电流" 英文翻译 :    earth leakage current
• "发射极漏电流" 英文翻译 :    emitter leak current
• "开关漏电电流" 英文翻译 :    switch leakage current
• "漏电电流测定" 英文翻译 :    measuring of leakage current
• "漏栅极漏电流" 英文翻译 :    drain gate leakage current
• "泄漏电流加热" 英文翻译 :    leakage current heating
• "泄漏电流屏蔽" 英文翻译 :    leakage current screen
• "整流器漏电流" 英文翻译 :    rectifier leakage current
• "旁漏电流，分路电流" 英文翻译 :    bldder current
• "倒流, 反向电流" 英文翻译 :    inverse current

• Back leakage current
  反向漏电流
• Furthermore , it shows that the fractional increament of reverse leakage current , due to its large variation , is a preferable parameter to represent the degree of degradation
  再者，因为反向漏电流的增加率变化较大，所以是表达劣化过程比较适合的参数。
• We analyzed the mechanism of the reverse leakage current for ni - salicide shallow junction and studied the effect of the different process condition on the reverse leakage current
  分析了ni - salicide浅结反向漏电流产生的机理，研究了不同的工艺条件对浅结反向漏电流的影响。
• The performance of state - of - the art silicon pin diodes is now approaching the theoretical limits , and it is apparent that further advances in silicon technology are very difficult because of material properties
  传统的sipin功率二极管由于si材料特性的局限性，很难实现开关速度、通态压降和反向漏电流三者良好的折衷。
• High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix . gettering procedures can reduce metal contamination
  由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。
• The sample with low emitter efficiency has completed as the method of above . this lead to the greatly decrease of the reverse recovery time and the low reverse leakage and forward voltage , especially the excellent temperature character of the leakage . the test date shows that the samples reach the first class of international level
  本论文作者通过仿真测试,验证了课题研究的理论设想,并设计制作了具有低阳极发射效率结构的高压功率frd ,利用局域铂掺杂和电子辐照相结合的寿命控制方式,实现器件反向恢复时间的极大减小,并且反向漏电流、软度因子、正向压降等关键参数也较理想,且具有极佳的漏电温度特性,达到器件综合性能的优良折衷,达到国际先进水平。
• In this paper , multilayered pt / bst / pt thin film capacitors were fabricated by the sol - gel process . both the reverse and forward leakage currents of the pt / bst / pt capacitors were reduced several orders of magnitude by employing this multilayered structure with top and bottom layers annealed at low temperatures during the sol - gel deposition of bst films
  本文采用溶胶-凝胶法，通过降低最底层和最上层的退火温度，在pt ti sio _ 2 si衬底上制备了非晶多晶型bst多层膜，不仅改善了正向漏电流特性，而且也改善了反向漏电流特性。
• All diodes have large reverse leak current density , which maybe caused by some reasons such as many ions are brought in course of evaporating metal on silicon surface of 6h - sic , chemical etch brings disfigurements such as burrs and dentate erodes as well as the rinse on surface of samples is not drastically accomplished
  两个肖特基二极管反向漏电流较大，估计原因为正面蒸发金属时引入大量离子、光刻引入毛刺和钻蚀等缺陷、金属与样品粘附能力差及样品背面欧姆接触制备好后正面清洗不充分等。
• Unfortunately , though the lifetime control technology reduces the stored charge , it increases the forward voltage drop ( vr ) and the reverse leakage current ( i , ) . therefore , si pin diode cannot realize a good trade - off in qs - vf - i , - . the appearance of sige material and sige / si hetero - junction technology has changed this situation
  但少子寿命控制技术在减少存贮电贺q _ s的同时，也增大了正向通态压降v _ f ，和反向漏电流i _ r ，因此很难实现qs - v _ f - i _ r三者良好的折衷关系。

• 反向漏电流的日语：ぎゃくろうえいでんりゅう ぎゃくもれでんりゅう