发光层的英文

• luminescent layer
• luminous layer
• photogenic layer
• photogenic plate

• "发光"英文翻译    give out light; shine; be lu ...
• "层"英文翻译    I storey; tier; stratum
• "场致发光层" 英文翻译 :    electroluminescent layer
• "光层" 英文翻译 :    photosphere
• "挡光层" 英文翻译 :    light blocking layer
• "电光层" 英文翻译 :    electrooptic layer
• "感光层" 英文翻译 :    photographic emulsion layer; photographic layer; photolayer; photosensitive coating; photosensitive lager; photosensitive layer; sensitive layer
• "滤光层" 英文翻译 :    filter layer
• "磨光层" 英文翻译 :    flush coat
• "抛光层" 英文翻译 :    polish layer
• "屈光层" 英文翻译 :    dioptric layer
• "日光层" 英文翻译 :    heliosphere
• "弱光层" 英文翻译 :    disphotic zone; dysphotic zone
• "闪光层" 英文翻译 :    flare layer; flash layer
• "透光层" 英文翻译 :    eupholic zone; euphotic layer; euphotic zone; photic region; photic zone
• "无光层" 英文翻译 :    aphotic layer
• "荧光层" 英文翻译 :    fluorescent coating; fluorescent layer
• "真光层" 英文翻译 :    euphotic layer
• "发光" 英文翻译 :    1.(发出光来) give out light; shine; be luminous; brighten; fulgurate; flash; glow; sparkle; glisten; gleam; shimmer; radiate; lightening; radiation; shining; glowing; inflammation 有一分热, 发一分光 give as much light as the heat can produce; do one's best, however little it may be; 露珠在晨光下闪闪发光。 dewdrops sparkle [glisten] in the morning sun. 群星闪闪发光。 the stars twinkled.2.[物理学] luminescence 场致发光 electroluminescence
• "x光层线" 英文翻译 :    layer line
• "蔽光层积云" 英文翻译 :    stratocumulus; opacus
• "高光层次" 英文翻译 :    high light details
• "湖泊透光层" 英文翻译 :    limnion
• "上透光层" 英文翻译 :    upper photic zone
• "透光层的" 英文翻译 :    euphotic

• The basic organic light emitting device ( oled ) consists of a number of ultra - thin organic layers between two electrode . under low applied voltage , the recombination of carriers coming from cathode and anode can produce intense light output
  有机电致发光器件( oled )采用有机薄膜作为发光层,能够在低驱动电压下,产生强烈的光电效应。
• The basic organic light - emitting device ( oled ) consists of a number of ultra - thin organic layers between two electrodes . under low applied voltage , the recombination of carriers coming from cathode and anode can produce intense light output
  有机电致发光器件（ oled ）采用有机薄膜作为发光层，能够在低驱动电压下，产生强烈的电光效应。
• The basic configuration of organic light - emitting device ( oled ) consists of a number of ultra - thin organic layers between two electrode . under low applied voltage , the recombination of carriers coming from cathode and anode can produce intense light output
  有机电致发光器件( oled )采用有机薄膜作发光层,能够在低驱动电压下实现有效的电致发光。
• First , the devcice with the structure of ito / npb ( 15nm ) / alq3 ( x ) / mg : ag was prepared by thermal deposition in high vacuum . the influence of tris - ( 8 - hydroxyquinoline ) aluminum ( alq3 ) film thickness on the dvicec performance was examined
  首先,制备了结构为ito / npb / alq3 / mg : ag的双层绿色发光器件,并且研究了alq3的发光层的膜厚度对绿光器件的光电性能的影响,优化了alq3的薄膜厚度。
• We studied further the mixture of alqs and lif in the form of solution and thin film and found that the luminescent spectrum is changed . this phenomenon arises perhaps due to ionic character of li or f . the second method is to insert mgf between two layers of organic materials
  我们采取了以mgf绝缘层将两种有机物隔离的方法，避免了激基复合物的形成，同时也发现mgf层还有限制空穴逸出发光层的功能，使空穴不致逸出发光层，而使复合加强。
• Compared with green light - emitting device , blue oled has many problems such as brightness , efficiency , stability , and color saturation , in this study we investgaited the blue oleds systemically : 1 ) double heterosturcture oled was charaterized . due to the introducing of electron transport layer alq3 and hole - blocking layer balq3 , the energy matching was more reasonable and the carrier injecting was more effective in the double - layer device . the maximum efficiency and luminance of this device attained to 1 . 90 lm / w and 10 , 000 cd / m2 , respectively
  其次,由于一直以来蓝光oled器件的研究处于相对落后的状态,其发光亮度、效率、稳定性和色纯度都无法绿光器件相比,所以本论文在以下几个方面对蓝光器件的性能进行了系统的研究: 1 )研究了双异质型蓝光oled器件,由于本研究引入了空穴阻挡层,使得载流子的复合和激子的扩散被限定在发光层内,器件的发光效率达到了1 . 90lm / w ,最大亮度达到了10000cd / m2 ,比传统结构器件的效率和亮度提高了约一个数量级; 2 )制备了结构为ito / npb / balq3 / alq3 / mg : ag的oled器件,研究发现,当改变各有机层厚度时,器件的电致发光光谱发生了从绿光到蓝光的移动。
• Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ) , which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices . as to the doped devices , measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2
  研究结果表明， dl - a型双层结构器件ito / npb / alq / mg : ag的各项性能指标明显优于单层器件ito / alq / mg : ag ，因为前者有更好的载流子迁移率匹配以及能带匹配，因此平衡了复合的载流子数目，并且能将复合区有效控制在发光层内部，有效避免了表面的大量缺陷以及电极猝灭效应，提高了载流子的复合效率，从而提高了器件的发光性能。
• For being with many advantages , it has been an active subject in recent years and much progress has been made . on the basic of analysis of many kinds of led structures , a new kind of strained layer structure has been introduced into our designed hb - led which has been manufactured in our laboratory to demonstrate a even higher efficient light emission . through calculation of led external quantum efficiency , a method for design hb - led top layer was evaluated
  本论文分析了当前国内外各种led的结构及其制作工艺，在技术上较为成熟的双异质结构基础上，我们在器件的有源区引入应变多量子阱结构，并根据实际需求增加补偿应变技术以保证发光层结构的稳定性；通过对器件外量子效率的计算，使得在器件设计有了定量的理论分析依据；并采用先进的涡轮lp - mocvd成功制备出galnp gaalinp应变多量子阱高亮度发光二极管器件。
• It also showed that doping concentration as well as the dopant itself had great influence on device character ; the el spectrum of devices indicated that the emitting sites in the doped devices shifted from alq molecules to the dopant and the current mechanism of the device was also changed when doping in the host
  从能带结构来看，掺杂剂的引入相当于在发光层中引入了新的能级结构，这是掺杂后器件性能发生改变的根本原因；适当的掺杂剂和掺杂浓度能够大大提高器件性能（在20v直流电压驱动电压下获得了亮度为25000cd / m2的掺杂型有机el器件） 。
• Theoretical analysis shows : compared with oled , moled with alq3 as light - emitting layer can emit different wavelength light by modulating length of cavity , spectral full width at half - maximum of moled changes from 100nm to 10nm ~ 20nm and the light intensity at peak is increased by about 20 times , and luminous efficiency can be enhanced
  理论分析表明：通过调节腔长，用alq3作发光层的moled可以发出不同中心波长的光，谱线宽度由oled的约100nm变为10 ~ 20nm ，峰值光强提高20倍左右，总发光效率也有所提高。