固定偏压的英文

• bias, fixed
• circuit, fixed bias
• clamp bias
• fixed bias voltage

• "固定"英文翻译    fixed; regular
• "偏压"英文翻译    bias voltage; biasing voltag ...
• "固定偏压电路" 英文翻译 :    circuit, fixed bias; fixed-bias circuit
• "定偏压" 英文翻译 :    fixed bias
• "固定偏压电晶体电路" 英文翻译 :    fixed-bias transistor circuit
• "固定偏差" 英文翻译 :    droop; permanent deflection
• "固定偏角" 英文翻译 :    inherent tip
• "固定偏心轮" 英文翻译 :    fixed eccentric
• "固定偏倚" 英文翻译 :    fixed bias
• "固定偏转系统" 英文翻译 :    fixed yoke
• "固定栅偏压" 英文翻译 :    fixed grid bias
• "固定偏差校正； 下垂度校正" 英文翻译 :    droop correction
• "下垂；下降；倾斜；斜面；固定偏差；减弱" 英文翻译 :    droop
• "偏压" 英文翻译 :    bias voltage; biasing voltage; bias; biasing; priming 截止偏压 cut-off bias; 偏压变压器 biasing transformer; 偏压电池 bias battery; bias cell; 偏压误差 bias error; 偏压线圈 bias winding; 偏压整流器 bias rectifier
• "定偏力" 英文翻译 :    drift force
• "定偏量" 英文翻译 :    drift of the projectile
• "测定偏差" 英文翻译 :    measurement deviation
• "测定偏振的" 英文翻译 :    polarimetric
• "给定偏差法" 英文翻译 :    method of a given deviation
• "设定偏误" 英文翻译 :    specification bias
• "稳定偏差" 英文翻译 :    steady deflection
• "稳定偏航角" 英文翻译 :    steady drift angle
• "稳定偏移" 英文翻译 :    steady drift
• "稳定偏转" 英文翻译 :    stabilized deflection
• "预定偏差" 英文翻译 :    target offset

• Notice that this is no more complicated than the fixed bias example
  注意到这并不比固定偏压的例子复杂。
• Bias voltage , which are related to the superlattice structural paraments , the doped densities and the applied bias voltage . we have also investigated the characteristics of superlattice under hydrostatic pressure by simulations
  超晶格的负微分电导区还导致出现固定偏压下随时间变化的电流自维持振荡，振荡产生的条件依赖于其结构参数，掺杂浓度和外加偏压的大小。
• When the applied bias voltage is changed within positive slope regions of u - i curve , the domain boundary between the high and low electric field domains does not moved , and the size of electric field domains regions is also not altered , while the electric field strengths are adjusted
  用模拟计算的方法研究了弱耦合掺杂gaaa / alas超晶格在时变电压下的场畴机制和固定偏压下电流自维持振荡。在时变电压下，一定掺杂的超晶格处于稳定的电场畴， u - i曲线呈现锯齿状波形。
• The electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena . we have optimized the simulation using matlab software . comparing the processing data , we know that various ode commands solve problems with different difficulties
  本论文主要内容包括以下几个方面：运用matlab软件进行模拟计算的算法优化，从比较掺杂弱耦合gaas / alas超晶格模拟计算的过程数据可得，不同的ode命令可求解问题的难度是不同的：针对较低难度问题，即研究固定偏压下超晶格纵向输运的求解问题( du / dt = 0 ) ，一般首选ode45 。
• Since the concept of superlattice was proposed , vertical transport in superlattice has been investigated widely . the electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena . such kind of oscillation can be uesd to make tunable microwave oscillaors . in this thesis , low temperature transport problem , especially the formation of field domain and the condition of current self - oscillations in doped gaas / alas superlattice with weak coupling are investigated thoroughly and also by combining the macroscopic model with the microscopic one . , the voltage - current characteristic and the current oscillation are simulated . the calculated result is nearly consistent with the experimental data
  由超晶格中子能级之间的顺序多阱共振隧穿引起的电场畴及电流自维持振荡现象是其中的一个非常有意义的分支，该现象可用来制作电压调谐微波振荡器。本论文对弱耦合掺杂gaaa alas超晶格中的纵向输运特别是针对低温下的场畴的形成和固定偏压下电流自维持振荡产生的条件进行了深入的探讨，并结合宏观模型和微观模型对超晶格在时变电压作用下的电压-电流特性以及固定偏压作用下的电流特性进行了模拟计算。

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