复合区的英文

• recombination region

• "复合"英文翻译    compound; complex; composite ...
• "区"英文翻译    H region; H
• "复合区域" 英文翻译 :    recombination region
• "复合范围，复合区域" 英文翻译 :    recombination region
• "碱土和盐土复合区" 英文翻译 :    solonetz-solonchak complex
• "辐合区" 英文翻译 :    area of convergence; zone of convergence
• "化合区" 英文翻译 :    combining zone
• "混合区" 英文翻译 :    dilution zone; mixing zone; mixture region
• "集合区" 英文翻译 :    gathering ground
• "胶合区" 英文翻译 :    bond zone
• "铰合区" 英文翻译 :    card
• "接合区" 英文翻译 :    composite region
• "结合区" 英文翻译 :    bonded pad; bonding land; bonding pad; dna
• "联合区" 英文翻译 :    association areas; association region; hinge area; the consortium
• "捏合区" 英文翻译 :    kneading set
• "啮合区" 英文翻译 :    tone of meshing region of engagement; tone of meshing, region of engagement
• "融合区" 英文翻译 :    zone of fusion
• "熔合区" 英文翻译 :    bond area; fusion area
• "粘合区" 英文翻译 :    bonding zone
• "综合区" 英文翻译 :    mixed-use district
• "耦合区" 英文翻译 :    coupled zone
• "复合" 英文翻译 :    compound; complex; composite; recombination; composition 这个词是由一个介词和一个动词复合而成的。the word is compounded of a preposition and a verb
• "atp结合区" 英文翻译 :    atp-binding domain
• "dna结合区" 英文翻译 :    dna binding domain
• "rna结合区" 英文翻译 :    rna binding domain

• These experiments also showed a possible source of defects is a highly doped zn-diffused region in close proximity to the recombination region .
  这些实验还表明，紧接近复合区的高掺Zn的扩散区有可能是一个缺陷源。
• Discussion on multiple choices of resources use in mine - grain mixed zone
  矿粮复合区资源多用途选择的探讨
• These experiments also showed a possible source of defects is a highly doped zn - diffused region in close proximity to the recombination region
  这些实验还表明，紧接近复合区的高掺zn的扩散区有可能是一个缺陷源。
• Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ) , which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices . as to the doped devices , measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2
  研究结果表明， dl - a型双层结构器件ito / npb / alq / mg : ag的各项性能指标明显优于单层器件ito / alq / mg : ag ，因为前者有更好的载流子迁移率匹配以及能带匹配，因此平衡了复合的载流子数目，并且能将复合区有效控制在发光层内部，有效避免了表面的大量缺陷以及电极猝灭效应，提高了载流子的复合效率，从而提高了器件的发光性能。