少数载流子的英文

• minority carrier
• minority-carrier

• "少数"英文翻译    small number; few; minority
• "载流子"英文翻译    carrier; charge carrier; cur ...
• "过剩少数载流子" 英文翻译 :    excess minority carrier; excess minority carries
• "少数载流子导纳" 英文翻译 :    minority carrier admittance
• "少数载流子发射机" 英文翻译 :    minority emitter
• "少数载流子发射极" 英文翻译 :    minority carrier emitter
• "少数载流子存储效应" 英文翻译 :    minority carrier storage effect
• "多数载流子" 英文翻译 :    majority carriers
• "少数载流子渡越时间二极管" 英文翻译 :    minority carrier transit time diode
• "多数载流子触点" 英文翻译 :    majority carrier contact
• "多数载流子导纳" 英文翻译 :    majority carrier admittance
• "多数载流子发射极" 英文翻译 :    majority emitter
• "小数载流子发射极" 英文翻译 :    minority emitter
• "载流子" 英文翻译 :    [固体物理] carrier; charge carrier; current carrier
• "少数载劣" 英文翻译 :    minority carrier
• "少数载劣掐" 英文翻译 :    minority carrier device
• "少数载体" 英文翻译 :    minority carrier
• "暗载流子" 英文翻译 :    dark carrier
• "本底载流子" 英文翻译 :    background carrier
• "本征载流子" 英文翻译 :    intrinsic carrier
• "本徵载流子" 英文翻译 :    intrinsic carrier
• "传导载流子" 英文翻译 :    conduction carrier
• "电荷载流子" 英文翻译 :    charge carrier
• "电流载流子" 英文翻译 :    current carrier
• "多余载流子" 英文翻译 :    excess carrier; excess charge carrier

• Equilibrium majority minority carriers
  平衡多数少数载流子
• Measurement of minority carrier life time in germanium by photoconductive decay method
  用光电导衰减法测定锗中少数载流子寿命
• Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
  用光电导衰减法测量硅单晶中少数载流子的寿命
• Pertaining to a semiconductor device in which both majority and minority carriers are present
  用于修饰或说明其中既有多数载流子又有少数载流子的半导体器件。
• Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
  硅和锗体内少数载流子寿命测定光电导衰减法
• Generally the minority carriers accumulated by the cell are generated either directly from the p - n junction or the distance between the generated minority carriers and the junction is less than the diffusion length of the minority carriers
  通常的太阳电池收集的少数载流子要么是产生于p - n结,要么是少数载流子距离结的距离必须小于其扩散长度。
• However , the switching power loss of si p - i - n diode increase with the switching frequency so that it is necessary to reduce the switching power loss by lifetime control technology which employs lifetime killer such as au , pt or radiation to lower the stored charge ( qs )
  但是，其开关功耗随着开关频率的提高而增大以至于不得不采用寿命控制技术(掺金、铂和辐照等)来降低少数载流子寿命从而降低开关功耗。
• For the material characteristics limitation of si , the switching power loss of si pin diode increase with the switching frequency so that it is necessary to reduce the switching power loss by lifetime control technology which employs lifetime killer such as au , pt or radiation to lower the stored charge ( q . , )
  Sipin二极管由于其材料特性的局限性，使开关功耗随开关频率的提高而增大，通常采用寿命控制技术(如掺金、铂和辐照等)降低少数载流子寿命从而降低开关功耗。
• Graded doping is adopted in both sides of the junction ( double graded doping ) . this results in a strong ( drift ) electric field throughout the whole active layer . this field will accumulate minority carriers effectively and the whole internal quantum efficiency is increased
  漂移场的形成是通过mbe技术,在结的两侧都采用梯度掺杂(即双梯度掺杂) ,从而在整个有源层都建立起一个强的(漂移)电场,有效地利用载流子在电场作用下的漂移作用收集少数载流子,使得总内量子效率得以提高。
• We define the recombination time of excess electrons in p field as the minority carrier lifetime . in theory , we developed the equation between excess minority carriers lifetime and the open - circuit voltage decay ; moreover , the effect of capacitance to general open - circuit voltage is also investigated . both different efficiency solar cells are measured by the method and showed the relations between the minority carrier lifetime and the performance of solar cells , which provides great useful guidelines for fabricating high - efficiency silicon solar cell in industry
  根据太阳电池的工作原理，详细地论述了用脉冲光源照射n / p结太阳电池时光电压的产生，理论上给出了注入p区的电子复合带来的开路电压与少子寿命的关系，也研究了n / p结势垒电容放电对开路电压衰减的影响关系，推导了利用开路电压随时间衰减的关系来测量少数载流子寿命的理论公式。

• 少数载流子的日语：しょうすうたんたい