快闪存储器的英文

• flash memory
• memory, flash

• "快"英文翻译    fast; quick; rapid; swift; s ...
• "闪"英文翻译    dodge; get out of the way
• "存储器"英文翻译    accumulator; computer memory ...
• "快闪存储卡" 英文翻译 :    minisd card
• "快闪式存储器" 英文翻译 :    flash memory
• "快闪存贮" 英文翻译 :    flash memory
• "快闪只读存储器" 英文翻译 :    flash rom
• "【计算机】快闪内存，闪存。" 英文翻译 :    flashmemory
• "闪存电可擦除可编程只读存储器" 英文翻译 :    feeprom flash electrically erasable programmable read only memory
• "闪存可擦除可编程只读存储器" 英文翻译 :    fprom flash erasable programmable read only memory
• "闪存" 英文翻译 :    flash memory flash; flash ram
• "存储器" 英文翻译 :    [计算机] accumulator; computer memory; memorizer; memory device; memory machine; storage unit; memory unit; storage; memory; store
• "存储，存储器" 英文翻译 :    sto store
• "存储；存储器；记忆" 英文翻译 :    memory
• "存储器，存储，记忆" 英文翻译 :    mem memory
• "快闪" 英文翻译 :    flash bios; quick flashing
• "三维存储器, 3d存储器" 英文翻译 :    three-dimensional memory
• "il存储器" 英文翻译 :    il memory
• "mos型存储器" 英文翻译 :    mos memorizer
• "按块存储器" 英文翻译 :    block oriented memory
• "按区存储器" 英文翻译 :    block-oriented memory
• "按位存储器" 英文翻译 :    bit-by-bit memory
• "按序存储器" 英文翻译 :    sequential access memory
• "奥氏存储器" 英文翻译 :    ovonic memory
• "百万存储器" 英文翻译 :    million bit memory

• Fm : flash memory
  快闪存储器
• Fm : flash memory
  快闪存储器
• Fm flash memory
  快闪存储器
• And a uc / os - ii fat file system with high performance library , which can be used on nand flash , will be described in this paper
  同时本文也详细讨论了在un os -下搭建nand快闪存储器文件系统的各项关键技术。
• The tested results and the characterization demonstrate that the proposed flash memory technology features low voltage , low power consumption , high programming speed , high access speed , self - convergence and high reliability , and is suitable for applications of the new flash memory products
  相关研究表明该快闪存储器技术具有低编程电压、低编程功耗、高编程速度、高访问速度、高可靠性、自收敛性和易于缩小的优点，在低压低功耗快闪存储器产品中有着广阔的应用前景。
• A novel flash memory , which uses the source induced band - to - band tunneling hot electron ( sibe ) injection to perform programming , and a pmos selected divided bit - line nor ( pnor ) array architecture are originally introduced in this dissertation
  本论文首次提出了一种采用源极诱导带带隧穿热电子注入( sourceinducedband - to - bandtunnelinghotelectroninjection )进行编程操作的新型快闪存储器技术和一种pmos选择分裂位线nor ( pmosselecteddividedbit - linenor )快闪存贮阵列结构。