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择优生长的英文

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"择优生长"怎么读用"择优生长"造句

英文翻译手机手机版

  • preferential growth
  • preferred growth

例句与用法

  • Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film
    薄膜中纳米硅晶粒的择优生长
  • Moreover , by adjusting the technological parameters , polycrystalline diamond films grown preferentially along the different crystal orientations can be prepared
    而且通过调节工艺参数,可制备出沿不同晶向择优生长的多晶金刚石薄膜。
  • Clearly , natu re has evolved mechanisms to influence crystal growth and morphology to a degree unparalleled in any in vitro environment , producing mineralized structures that are permeably optimized to their fruition with is an organism
    自然界通过有机大分子与无机物离子在界面处的相互作用的矿化机理来控制材料的结构与形貌,从而使无机物与有机体形成具有择优生长取向的精美复合物。
  • Polycrystalline diamond films with preferred orientation by adopting assisted - bias hfcvd technique are prepared , and the mechanisms of the nucleation and growth of the films are studied . in addition , application of the film to the heat sink of power electron device is discussed
    采用辅助偏压热丝cvd技术,制备择优生长的多晶金刚石薄膜,研究了金刚石薄膜的成核及生长机理,并将其应用于功率电子器件的热沉。
  • Graphite ) and the special viscoelasticity of polymer , interlayer exfoliation of the filler and its nanocompounding with polymers can be realized in the shearing force field of pan - milling , through the effects such as deformation , dislocation , tension - sliding and shearing exfoliation of graphite , the tension - thinning , pulverization of pp , as well as the imbedding , mixing and dispersion of graphite flakes in pp powder etc . the results show that the interlayer exfoliation of graphite and nano - compounding with pp proceeded stepwise , caused by a combination of friction , squeezing , stretching , and shearing in three - dimension during pan - milling
    石墨片层的受限空间影响i一pp / yep25o复合材料中pp结晶行为,进入石墨片层间的pp分子一部分择优取向,形成沿( 040 )晶面法线方向择优生长的a一晶,另一部分相对分子质量较小、运动活性较高的pp分子则受到石墨片层的挤压和限制而转化为y -晶,在i一pp厅ep250复合材料中, y -晶相对含童达34 . 8 % 。
  • Sem , transmission electron microscopy ( tem ) , x - ray energy - dispersion analysis ( edax ) , xrd , electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology , atomic composition and crystal structure of the nanowires . the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140 . ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol
    Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的结果表明,所得cdse纳米线为六方晶型,晶体的( 001 )晶面沿平行于基底的方向择优生长,且随沉积温度的降低,这种择优生长的趋势越来越强;纳米线晶体在生长时,由于受aao模板孔径的限制,形成c轴方向拉长的晶粒,其长径比达5 1以上;晶体的大小和完善程度随沉积温度的降低而增大, 185沉积得到多晶六方cdse纳米线,而140沉积时可得到六方cdse单晶纳米线。
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