掺氮的英文

• nitrating

• "掺"英文翻译    hold
• "氮"英文翻译    nitrogen
• "掺氮吸气剂钡膜分布测试方法" 英文翻译 :    test method for barium film distribution of nitrogendoped getterr
• "掺氮吸气剂含氮量测试方法" 英文翻译 :    test methods for nitrogen content of nitrogen-doped getter
• "掺标样本；加标样品" 英文翻译 :    spiked sample
• "掺拌斗" 英文翻译 :    blending bin; blendingbin
• "掺碘聚合物" 英文翻译 :    iodine-doped polymer
• "掺" 英文翻译 :    掺动词[书面语] (持; 握) hold
• "掺饵光纤" 英文翻译 :    edf erbium-doped fiber
• "搀杂者" 英文翻译 :    sophisticator
• "掺饵光纤放大器" 英文翻译 :    edfa erbium-doped fiber amplifier; edfa:erbium-doped fiber amplifier
• "搀杂物" 英文翻译 :    adulterant; dopant; sophistication

• Test methods for nitrogen content of nitrogen - doped getter
  掺氮吸气剂含氮量测试方法
• Standard specification for steel bars , alloys , for nitriding
  掺氮用合金钢棒
• Test method for barium film distribution of nitrogen - doped getter
  掺氮吸气剂钡膜分布测试方法
• The advance of research on oxygen precipitates in ncz silicon
  掺氮直拉单晶硅中氧沉淀的研究进展
• Test method for nitrogen - released and gas - absorbed dynamic curve of nitrogen - doped getter
  掺氮吸气剂释氮吸气动态曲线测试方法
• We found that the cz silicon wafers preannealed by rtp in nitrogen atmosphere are significantly characteristic of ncz silicon wafer , that is , the n - o complexes related stds are also generated in the cz wafer subjected to rtf in na and subsequent proper heat treatments
  研究发现，氮气氛下高温rtp处理的cz硅样品在后续热处理中表现出了掺氮硅的退火特性，进而证明了在氮气氛下rtp处理中氮发生了内扩散。
• It seems the ncz silicon has a higher bdt temperature compared with cz silicon ' s . it is suggested that the elastic effects and the electronic effects of nitrogen doped in silicon made the bdt temperature higher . the observation of fracture surface showed that it was curves at high temperature in brittle fracture , but smooth planes at room temperature
  当温度升高达到硅材料的脆塑转变时，材料的断裂强度有个很大的提高，但是首次发现含氮硅单晶却不明显，而且掺氮的硅单晶脆塑转变温度比普通单晶高，可能是氮的掺入改变了硅材料的内部晶体结构及电子结构。
• However , it is not easy to incorporate large n concentration in gap due to the large differences in lattice structure ( gan belongs to wurtzite structure while gap zinc blende structure ) and in lattice constant ( ~ 20 % ) between gan and gap , which will lead to an extremely large miscibility gap
  然而要在gap中实现高浓度的掺氮并不容易。这主要是由于gap和gan之间较大的物理特性的差异，特别是晶格结构和晶格常数的差异，使得gap和gan存在较大的可混溶性间隙，从而难以生长高质量的高掺氮的gap材料。