晶体生长技术的英文

• crystal technique

• "晶体"英文翻译    crystal; vitrella; crystal b ...
• "生长"英文翻译    grow; grow up; ascent; meris ...
• "技术"英文翻译    technology; skill; technique ...
• "单晶生长技术" 英文翻译 :    single crystal growth technique
• "单晶体生长" 英文翻译 :    single crystal growing
• "晶体生长" 英文翻译 :    crystal growing; crystal growth; crystalgrowth; crystalline growth; growth of crystals; growth of the crystal
• "晶体生长段" 英文翻译 :    crystal growing section
• "晶体生长机" 英文翻译 :    crystal grower
• "晶体生长炉" 英文翻译 :    crystal growing furnace; crystal growing furnance; crystal-growing furnace
• "晶体生长器" 英文翻译 :    crystal grower
• "硅蓝宝石生长技术" 英文翻译 :    silicon-on-sapphire
• "溶液再生长技术" 英文翻译 :    solution regrowth technique
• "液相外延生长技术" 英文翻译 :    liquid － phase epitaxial growth technique; liquidphase epitaxial growth techniquee; liquid－phase epitaxial growth technique
• "外延晶体生长，附生晶体生长" 英文翻译 :    epitaxial growth
• "反常晶体生长" 英文翻译 :    anomalous crystal growth
• "高温晶体生长" 英文翻译 :    high temperature crystal growth
• "激光晶体生长" 英文翻译 :    laser crystal growing
• "金属晶体生长" 英文翻译 :    metal-crystal growth
• "晶体生长方法" 英文翻译 :    the method of crystal growth
• "晶体生长基础" 英文翻译 :    foundation of crystal growth
• "晶体生长机理" 英文翻译 :    mechanism of crystal growth
• "晶体生长理论" 英文翻译 :    theories of crystal growth; theory crystal growth
• "晶体生长速度" 英文翻译 :    crystalline growth velocity; rate of crystal growth; rate of crystalline growth; rateofcrystallinegrowth
• "晶体生长速率" 英文翻译 :    rate of crystal growth
• "晶体生长现象" 英文翻译 :    growth phenomena

• In this thesis , some fundamental topics on p - sic crystal growth such as the design of the crucible assembling system , the thermal field distribution and the liquid phase epitaxial growth of p - sic films deposited on si have been discussed . in brief , following major creative results have been obtained : 1
  本文探索碳化硅晶体生长技术的若干基本问题，特别对热系统的设计和热场分布问题，以及用- sic薄膜在碳饱和硅熔体中进行液相外延生长的基本工艺问题等进行了研究，获得以下主要创新结果： 1
• The technical breakthroughs in growth of nd : cngg had been made . in particular , continuous laser operation was achieved from nd : cngg pumped by ld . when the crystal wafer was end - pumped by one bar of ld with 807nm wavelength , the cw laser output power of 123 . 1 mw was obtained with slope efficiency of 22 . 3 %
  本论文用自动化熔体提拉技术成功生长出< 111 >方向的直径25mm以上,长度80mm以上的平界面无核心nd : cngg单晶,确定了晶体结构和物相,测量了晶体的光谱性能,晶体消光比达到34db ,晶体生长技术有新的突破,实现了连续激光运转,用单支807nm半导体激光二极管端面泵浦该晶体片子,在国内首次获得123 . 1mw的1 . 062 m连续激光输出,斜效率达22 . 3 % 。