晶格畸变的英文

• distortion of lattice
• lattice deformation
• lattice distortion

• "晶格"英文翻译    crystal lattice; lattice; sp ...
• "畸变"英文翻译    aberration; distortion; fals ...
• "分子晶格畸变" 英文翻译 :    molecular lattice distortion
• "晶格畸变扩展" 英文翻译 :    lattice-distortion widening
• "消除晶格畸变的退火" 英文翻译 :    annealing of lattice disturbance
• "网格畸变" 英文翻译 :    mesh distortion
• "畸变晶格" 英文翻译 :    distorted lattice; perturbed lattice
• "晶格" 英文翻译 :    [物理学] crystal lattice; [晶体学] lattice; space lattice; crystalline host lattice 面心晶格 face-centred lattice; 体心晶格 body-centred lattice; 晶格场 crystal field; 晶格放大 lattice amplification; 晶格结构 lattice structure; 晶格理论 lattice theory; 晶格象 lattice image
• "畸变" 英文翻译 :    [电学] aberration; distortion; falsification; skewness◇畸变变压器 distortion transformer
• "晶格，结晶格子" 英文翻译 :    crystal lattice
• "子晶格；亚晶格" 英文翻译 :    sublattice
• "α晶格" 英文翻译 :    alpha lattice
• "超晶格" 英文翻译 :    superlattice
• "大晶格" 英文翻译 :    macrolattice
• "倒晶格" 英文翻译 :    reciprocal lattice
• "点晶格" 英文翻译 :    point lattice
• "格子；晶格" 英文翻译 :    lattice
• "硅晶格" 英文翻译 :    silicon lattice
• "价晶格" 英文翻译 :    valence crystal; valencecrystal
• "晶格，点阵" 英文翻译 :    lattice
• "晶格波" 英文翻译 :    lattice wave
• "晶格层" 英文翻译 :    lattice layer
• "晶格场" 英文翻译 :    lattice field
• "晶格点" 英文翻译 :    lattice point; lattice site; lattice-site
• "晶格化" 英文翻译 :    crystallize

• The reasons were about to the distortion of crystalline grain of metal , caused by cold - working , and size - effect of the fibers
  这与冷加工引起金属晶格畸变以及纤维的尺寸效应有关。
• The dielectric constants were relatively high either lattice aberrance was tiny or crystal content was large
  掺tb薄膜的介电常数在晶格畸变程度小时和在掺tb后使晶体含量出现最大值时都较高。
• When the - 3 - particle size was small , the aberration of crystal lattice appeared and the bandgap energy increased , which resulted in the blue shift of absorption in the spectrum
  本研究中小的二氧化钛晶粒导致了tio _ 2的晶格畸变，进而增大了tio _ 2的禁带宽度，表现在光吸收谱的蓝移。
• The photo - induced phase transition of the different light intensities , photo - energies and directions of the polarized light is investigated . it suggested that the photo excites the down spin eg electrons and destroys the spin order system of the thin films . the relation between the he - ne laser reflectivity of the thin film , applied current and resistance was analyzed by the optics theory of solid state physics
  光子通过激发e _ g向下电子的跃迁，从而改变材料自旋极化方向，影响体系的输运行为；首次研究了cmr薄膜的激光反射率和偏置电流的关系，并用固体光学理论对其定性分析，表明反射率的变化是由于电场引起材料的晶格畸变，改变了极化率，从而导致材料的折射率和反射率发生改变。
• The experiments showed that wc and vc can dissolve mutually in the carbonizing reaction . when wc ' s content exceeds vc ' s , vc will dissolve into wc and make wc ' s crystal lattice bring aberrance and become wc1 - x , contrarily when vc ' s content exceeds wc ' s , wc will dissolve into vc and also make vc ' s crystal lattice bring aberrance . the surface cermet composite has high rigidity and well wear - resistance
  ( 7 )采用铸造烧结技术，通过加入毗颗粒和v班一vc的原位放热反应成功制取了碳化物陶瓷质量百分数超过60 %的表面金属陶瓷材料，实验证实wc与高温碳化反应生成的vc相互可以很好的固溶，当wc的含量超过vc时， vc可以固溶到wc中，使wc的晶格发生畸变，成为昵卜: ，反之当vc的含量超过wc的含量时， wc可以固溶到vc中，也会造成vc的晶格畸变。
• Experimental results show that the grains were gradually triturated to namometer size with milling time and the grain size might be 30nm or so , but the grain size was not decreasing after the powder has been milled for 25 hours . the nano - sized sic was synthesized by ball milling of si and c mixed powders which rare earths as a additive was added to
  结果表明：随着时间的延长，粉末逐渐细化至纳米级，可以细化到30nm左右，但球磨时间超过25h后粉末颗粒继续细化的速度明显放慢，并且在球磨的过程因为晶粒细化和晶粒内部发生了严重的晶格畸变，纳米粉体x射线衍射峰产生严重宽化。
• The temperature dependences on the resistance in all the thin films show that in the low temperature range the width of eg band level changes the transports , but in the high temperature range the thin films forms the small polarons hopping conductivity . the phase transition induced by the current is explained by the demagnetization and lattice distortion
  在高温部分，材料呈现小极化子跳跃形式输运特征；实验研究了不同偏置电流对薄膜的相变影响，表明电场可以引起材料中磁性的变化和晶格畸变，导致相变温度点向低温方向移动；材料的光致相变研究表明光子能量、光强和极化方向对输运性质有影响。
• The error of the calculation methods used in this paper is estimated by comparing the calculation results of ge , gap , gaas arid inp with their experimental results . the error due to ignoring the lattice aberration causing by substitutional atoms is also discussed . the way to increase the accuracy is discussed
  通过比较ge 、 gap 、 gaas和inp的计算结果和实验结果之间的差别，对该方法的计算误差进行了估算，分析了由于忽略杂原子取代所导致的晶格畸变产生的误差，并提出了解决办法。
• To characterize the particle size of the srce03 products , some methods used to determine the crystalline grain size and crystal lattice distortion rate of nanostructured powder based on xrd data were studied . it was found that some methods had their shortage . to rationalize the calculation , a proper treating method was recommended
  为了表征所制备的纳米srceo3粉体的粒度，本论文对利用粉晶x射线衍射技术表征纳米粒于的粒度和晶格畸变的方法进行了研究，发现已有的某些方法中存在的不合理性，针对表征方法的合理化提出了自己的见解。