未掺杂的的英文

• unallayed
• unalloyed
• unmixed
• virgin

• "未"英文翻译    did not; have not
• "掺杂"英文翻译    mix; mingle doping; inclusio ...
• "的"英文翻译    4次方是 The fourth power of 2 i ...
• "掺杂的" 英文翻译 :    adulterated substance; doped; heterogeneous
• "不掺杂的”" 英文翻译 :    plain unadulterated
• "掺杂的晶体" 英文翻译 :    doped crystal
• "掺杂的熔体" 英文翻译 :    doped melt
• "掺杂的投放" 英文翻译 :    doping shot
• "无掺杂的" 英文翻译 :    undoped
• "重掺杂的" 英文翻译 :    heavily-doped
• "掺杂粉, 掺杂的面粉" 英文翻译 :    adulterated flour
• "纯粹的，不掺杂的" 英文翻译 :    sheer a. mere； unmixed with anything else
• "顺磁法掺杂的" 英文翻译 :    paramagnetically-doped
• "型掺杂的漏极" 英文翻译 :    n doped drain
• "型掺杂的源极" 英文翻译 :    n doped source
• "n 型掺杂的漏极" 英文翻译 :    n doped drain
• "n 型掺杂的源极" 英文翻译 :    n doped source
• "掺杂的，掺假的低劣的" 英文翻译 :    adulterated
• "掺杂的；不纯的；未精制的" 英文翻译 :    impure
• "掺杂的多晶硅扩散" 英文翻译 :    doped polysilicon diffusion; dopos
• "掺杂的光导器件" 英文翻译 :    doped-waveguide device
• "掺杂的掺了添加剂的" 英文翻译 :    doped
• "掺杂的中间相碳素微球" 英文翻译 :    mcmb
• "电子掺杂的高温超导体" 英文翻译 :    electron-doped high temperature superconductor
• "杂的" 英文翻译 :    heterogeneous

• It is showed that after doping s the bn thin films of n - type conductivity are obtained
  研究表明，未掺杂的氮化硼薄膜电阻率为为1
• One of the typical solutions to this problem is to set buffers on both sides of the base
  解决这个问题的典型方法就是在基区两侧引入一个未掺杂的sige缓冲层。
• 2 for the first time , rf sputtering method and vapor doping method have been combined to prepare n type bn films . bn films doped with s are n type conductivity
  掺s后的氮化硼薄膜表现出n型导电，未掺杂的氮化硼薄膜的电阻率1 . 8 1011 cm ，掺杂后的氮化硼薄膜的电阻率为7 . 3 107 cm 。
• In both of the two doped models , the calculation results show that their conductivity is higher than that of the non - doped model , while the seebeck coefficient and thermal conductivity are lower than the non - doped on e
  两种掺杂模型的电导率都高于未掺杂的ca _ 3co _ 2o _ 6 ，而seebeck系数和热导率都降低。
• 2 、 in order to solve the phenomenon of the outdiffusion of the base dopant , two solutions are suggested : 1 ) the sige : c base can effectively solve the outdiffusion problem ; 2 ) the undoped buffer layer can constrict the outdiffusion phenomenon
  2 、为了解决基区杂质外扩现象,提出了两种方案: 1 )采用掺碳的sige : c基区层,能够有效消除外扩问题; 2 )采用未掺杂的缓冲层i - sige ,能够有效抑制外扩现象。
• Results obtained by different electrochemical measurements show that the amounts of co in samples have great influence on their electrochemical capacities . while measured co was doped , the electrode has better capacity property , lower impedance and higher utilization , and can be charge - discharged at high current of 40ma
  电化学测试结果得出化学掺杂的配比对电化学性能影响很大，适量掺杂的mno _ 2电极比未掺杂的mno _ 2电极具有更好的循环性能和电容性能。
• The x - ray diffraction , scanning electronic microscope and the squid were used to characterize the properties of the mgb2 core in mgb2 / fe tapes and wires . the effect of the proportion of mg , b and sic as well as the sintering parameters on the phase formation , microstructure and the critical current densities of mgb2 / fe tapes and wires was discussed in details . the results showed that the high purity of mgb2 core could be synthesized by both the traditional vacuum sintering and the sparking plasma sintering and the vacuum sintering environment restrained the oxidation of mg effectively
  相对于传统真空烧结, sps烧结方式成相速度快、样品晶粒细小均匀、 mgb2超导芯致密性好、晶间连接优良,因而sps烧结样品的临界电流密度明显高于传统真空烧结样品,其中未掺杂的带材样品经过sps800 , 15分钟烧结后,自场下的临界电流密度jc值在10k时达到8 . 64 105a / cm2 ,而且随着测量温度和外加磁场的增加, sps烧结样品的临界电流密度下降率比传统真空烧结样品缓慢,在20k ,自场时为5 . 97 105a / cm2 , 20k , 3t时,临界电流密度值仍大于104a / cm2 。
• The results show that mno which not be modified can not be use as electrode active materials because of its poor electrochemical activity . meanwhile , the rechargeabilify of mno modified by bi and pb is improved . bismuth could prolong the second electron equivalent discharge and lead could improve the first electron equivalent discharge performance
  I44 ）对热分解产物进行了充放电，循环伏安，恒电流极化， tafe曲线分析，交流阻抗分析，得出未掺杂的mno直接作为电极活性材料，其电化学活性很差，但通过掺bi ， ph进行改性，提高了其可充性， 1的影响主要在于第二电子放电， ph则可以延长第一电于放电