气保护的英文

• gas shield

• "气"英文翻译    gas
• "保护"英文翻译    protect; defend; guard; safe ...
• "大气保护法" 英文翻译 :    clean air act
• "电气保护" 英文翻译 :    electric protection
• "惰性气保护" 英文翻译 :    controlled atmosphere
• "氦气保护焊" 英文翻译 :    heliarc welding; helium arc welding; heliweld
• "空气保护" 英文翻译 :    air conservation
• "尾气保护" 英文翻译 :    trailing gas shield; trailinggasshield
• "油气保护法" 英文翻译 :    oil and gas conservation law
• "氩气保护" 英文翻译 :    argon shield
• "氩气保护层" 英文翻译 :    argon shield
• "电气保护器件" 英文翻译 :    electric protective device
• "电气保护装置" 英文翻译 :    electric protective device
• "钢流氩气保护" 英文翻译 :    impact method
• "氦气保护焊接" 英文翻译 :    helium shielded welding; heliwelding
• "气保护弧焊机" 英文翻译 :    gas shielded arc welding machine
• "气保护碳弧焊" 英文翻译 :    gas carbon-arc welding; shielced carbon-arc welding
• "水蒸气保护焊" 英文翻译 :    water-vapo(u)r welding; water-vapor welding
• "氩气保护电弧" 英文翻译 :    argon arc
• "氩气保护烧结" 英文翻译 :    ar-sintering
• "氩气保护铸造" 英文翻译 :    argon cast
• "高温氢气保护炉" 英文翻译 :    high temperature hydrogen furnace
• "交流钨极气保护焊" 英文翻译 :    ac gas tungsten arc welding
• "金属极气保护焊" 英文翻译 :    metal-arc gas-shielded welding (magsw)
• "气保护钨极电弧焊" 英文翻译 :    gas tungsten-arc welding

• Argon cooling chamber
  氩气保护冷却室
• Produces high voltage and low voltage switch equipments , automatic control equipments and dc power equipments
  -生产和出口cd - r光盘空白录象带v - 0盒dvd盒cd盒气保护药芯焊丝等。
• Ni3al has a good wettability with tic . in purified argon atmosphere , melt ni3al can infiltrate tic preforms spontaneously
  Ni _ 3al熔体在氩气保护下，可以自发浸渗充满多孔tic预制体。
• Flux cored wires for gas shielded and self - shielded metal arc welding of mild steel , high strength steel and low temperature service steel
  低碳钢高强度钢和低温钢用气保护和自保护金属电弧焊用管状焊丝
• Sintering time ranges from 3 to 10 hours , and sintering temperature ranges from 160ctc to 1900 ? , under an ar . protection of 1 . 0 atm
  在1 . 0atm的ar气保护下进行烧结，选用的烧结时间从3小时到10小时，烧结温度由1600到1900 。
• Sintering time ranges from 3 to 10 hours , and sintering ranges from 1600 @ to 1900 @ , after sintering , the samples are dry - oxidized in an oxidization furnace and then have their excessive carbon removed by diamond - cream grinding or direct grinding
  气保护下进行烧结，烧结完成后，用干氧法在氧化炉中氧化并研磨或直接研磨的方法去除样品表面过量的碳。
• Dsc , xrd , and edx analysis were adopted to explore the solid - state reaction processing parameters . the results showed that zrnisn - based compounds were synthesized at 1173k with holding for 96 ~ 168hrs , which were also under high purity ar shielding
  结果表明：通过固相反应， zrnisn基化合物可以在高纯ar气保护下于1173k保温96 168小时获得：各种组分的产物晶型完整且无杂质相出现。
• Limnoa has been synthesized from self - synthesized material y - mn203 by wet moist chemical method under different sinter conditions in argon . the material was analyzed by xrd , sem . it is shown by xrd that material is limno2 single phase in 450 keeping 5h , then in 600 ? sintering 6h in argon
  通过xrd物相分析发现:以自制原料y一mnzo3为锰源，在a :气保护下，采用湿化学法，在450下，预烧结5h研磨后再于600下烧结6h ，可以合成出单相limnoz 。
• The n type carrier was provided by interstitial zn atom , and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility . when zno thin film was annealed in the ar ambience , p conduction type was founded in the zno thin film which grew in oxygen enrichment condition . this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ) , and p type carrier was from oi
  在ar气保护下,对富氧条件下生长的zno薄膜的退火后的霍尔测量中发现, zno薄膜呈现p型导电状态,分析认为,这可能是由于富氧状态下生长的zno薄膜中过量的o在ar气保护下退火没有逸出薄膜,反而进入了zno薄膜的间隙位置,成为正电中心,使zno薄膜呈现p型导电。