气相反应的英文

• gas phase reaction
• gas-phase reaction
• gaseous phase reaction
• vapor-phase reactions

• "气"英文翻译    gas
• "相反"英文翻译    opposite; contrary; adverse; ...
• "应"英文翻译    answer; respond to; echo
• "气相反应器" 英文翻译 :    gas-phase reactor
• "相反应" 英文翻译 :    phase reaction
• "多相反应；非均相反应" 英文翻译 :    heterogeneousreaction
• "均相反应 均相反应" 英文翻译 :    homogeneous reaction
• "单相反应" 英文翻译 :    homogeneous reaction; single phase reaction
• "第二相反应" 英文翻译 :    second phase reaction; second-phase reaction
• "第一相反应" 英文翻译 :    first phase reaction; first-phase reaction
• "多相反应" 英文翻译 :    heterogeneous reaction; heterogeneousreaction; hexa reaction; principles of multiphase reaction
• "二相反应" 英文翻译 :    biphasic reaction; biphasic response; biphasicreaction
• "发相反应" 英文翻译 :    lpr
• "非均相反应" 英文翻译 :    heterogeneous reaction; inhomogeneous reaction
• "复相反应" 英文翻译 :    heterogeneous reaction
• "固相反应" 英文翻译 :    solid phase reaction; solid state reaction; solid-phase reaction
• "互相反应" 英文翻译 :    interreaction
• "均相反应" 英文翻译 :    homogeneous reaction
• "均相反应堆" 英文翻译 :    homogeneous reactor
• "均一相反应" 英文翻译 :    homogeneousreaction
• "凝结相反应" 英文翻译 :    condensed-phase reaction
• "汽相反应" 英文翻译 :    vapor phase reaction; vapor reaction; vapour-phase reaction
• "汽相反应法" 英文翻译 :    vapor reaction method
• "汽相反应器" 英文翻译 :    vapor phase reactor; vapour-phase reactor
• "相反应力" 英文翻译 :    counter stress

• In fact of the preparation of material , nanometer wo _ 3 was synthesized in a novel method by gas - state reaction with tungsten filament . further more , we designed a new type gas sensor based on hall effect
  在材料制备方面,我们使用了一种新的wo _ 3粉末制备方法:采用气相反应法,以纯钨丝为原料,获得了wo _ 3纳米气敏材料。
• The results showed the reaction between the mg and si powders was solid - state reaction and impurities such as mgo , mg3c2 : were usually produced resulting from the reactions with air or graphite crucible since mg was very active
  结果表明： mg颗粒与si颗粒之间的反应是固相反应，杂质的引入是由于mg元素高度的活泼性能而混入的mgo 、 mg _ 3c _ 2等气相反应的产物。
• In the model , many processes or phenomena such as crack friction and growth , heat conduction , phase transformation of oxidant particulates , heat generation by viscous liquid layer , chemical reactions of gases in cracks , heat and mass exchange between phases of gas and solid , are described
  模型描述了裂纹滑移扩展、热传导、含能颗粒相变、液化层粘性加热、裂纹内气相反应、气相固相质量能量交换及与裂纹扩展耦合等过程。
• The pilot fuel model has been given to calculate the distribution of the liquid fuel and time of fuel pre - combustion , at the same time , analyzing the important action to the combustion of the natural gas in the combustion chamber of engine , determining the best quantity of pilot fuel . the explosive combustion model has been established to compute the pressure of the cylinder during the combustion , determining the main influence factors . the emission model has been established to forecast the co , nox emission
  理论方面，提出了基于化学反应的燃烧模型?多组分气相反应系统的化学反应动力学模型，以此进行双燃料发动机的热力学?化学反应动力计算；引燃油燃烧模型，计算引燃油液滴的分布规律和滞燃期，验证引燃油在双燃料发动机燃烧过程中的作用，揭示不同喷油规律对双燃料发动机的影响，确定在不同负荷下的合理引燃油量；爆震模型，揭示爆震与工质能量释放间的关系和影响爆震的各种运转因素，确定合理的爆震依据，减小爆震倾向。
• The properties of cn thin films such as their morphology , component , crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed , showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique , , the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed . the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process , based on this the growth mode of cn thin films on the si substrate is proposed . the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted , which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
  采用pld技术进行了碳氮化合物薄膜沉积，得到了含氮量为21at的cn薄膜；研究了衬底温度和反应气体压强对薄膜结构特性的影响，给出了cn薄膜中n含量较小、 sp ~ 3键合结构成分较少和薄膜中仅含有局域cn晶体的原因；引入脉冲辉光放电等离子体增强pld的气相反应，给出了提高薄膜晶态sp ~ 3键合结构成分和薄膜的含n量可行性途径；应用pe - cvd技术以ch _ 4 + n _ 2为反应气体并引入辅助气体h _ 2 ，得到了含n量为56at的晶态cn薄膜；探讨了cn薄膜形貌、成分、晶体结构、价键状态等特性及其与气体压强和放电电流的关系，证明了- c _ 3n _ 4薄膜沉积为满足动力学平衡条件的各种反应过程的竞争结果；采用光学发射谱技术对cn薄膜生长过程进行了实时诊断，得到了实验参量对等离子体中活性粒子相对浓度和气相反应过程的影响规律，给出了cn薄膜沉积的主要反应前驱物，揭示了cn薄膜特性和等离子体内反应过程之间的联系；采用高气压pe - pld技术研究了不同衬底温度条件下cn化合物薄膜的结构特性，揭示了si原子对薄膜生长过程的影响，给出了si基表面碳氮薄膜的生长模式；在金刚石研磨和催化剂fe处理的si衬底上进行cn薄膜沉积，证明了通过控制材料表面动力学条件可以改变碳氮薄膜结构特性，并可显著提高晶态碳氮材料的生长速率。

• 气相反应的法语：réaction en phase gazeuse
• 气相反应的日语：きそうはんのう