沟道掺杂的英文

• channel doping

• "沟道"英文翻译    channel
• "掺杂"英文翻译    mix; mingle doping; inclusio ...
• "沟道" 英文翻译 :    channel
• "掺杂" 英文翻译 :    1.mix; mingle2.doping; inclusion; addition; adulteration
• "净掺杂 净掺杂" 英文翻译 :    netdoping
• "p沟道" 英文翻译 :    positive channel
• "短沟道" 英文翻译 :    short channel
• "沟道层" 英文翻译 :    channel layer
• "沟道气" 英文翻译 :    sewer gas
• "沟道区" 英文翻译 :    channel region
• "沟道酌" 英文翻译 :    cha eling; channeling
• "球沟道" 英文翻译 :    ball track
• "双沟道" 英文翻译 :    double channel
• "水沟道" 英文翻译 :    flume
• "型沟道" 英文翻译 :    p-channel p
• "不掺杂" 英文翻译 :    undope
• "掺加；掺杂" 英文翻译 :    adulteration
• "掺杂,掺假" 英文翻译 :    adulteration
• "掺杂的" 英文翻译 :    adulterated substance; doped; heterogeneous
• "掺杂粉" 英文翻译 :    adulterated flour
• "掺杂硅" 英文翻译 :    doped silicon
• "掺杂级" 英文翻译 :    doping level
• "掺杂剂" 英文翻译 :    adulterant; dopant; dope additive; doped chemical; doping agent
• "掺杂结" 英文翻译 :    doped junction
• "掺杂料" 英文翻译 :    adulterant

• Based on the hydrodynamics energy transport model , the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density . the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet , and for both devices of different structure , the impact of n type accepted interface state on device performance is far larger than that of p type . it also manifests that the degradation is different for the device with different channel doping density . the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
  基于流体动力学能量输运模型，对沟道杂质浓度不同的深亚微米槽栅和平面pmosfet中施主型界面态引起的器件特性的退化进行了研究.研究结果表明同样浓度的界面态密度在槽栅器件中引起的器件特性的漂移远大于平面器件，且电子施主界面态密度对器件特性的影响远大于空穴界面态.特别是沟道杂质浓度不同，界面态引起的器件特性的退化不同.沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大

• 沟道掺杂的日语：チャネルドーピング