注入技术的英文
发音:
"注入技术"怎么读用"注入技术"造句
英文翻译手机版
- implantttion technique
- injection technique
- "注入"英文翻译 pour into; empty into; inpou ...
- "技术"英文翻译 technology; skill; technique ...
- "注入技术应用公司" 英文翻译 : applied implant technology inc
- "离子注入技术〔制造半导体的一个程序〕。" 英文翻译 : ion implantation
- "表插入技术" 英文翻译 : list insertion technique
- "接入技术" 英文翻译 : access technology
- "块插入技术" 英文翻译 : block insertion technique
- "垂直写入技术" 英文翻译 : perpendicular recording
- "导管插入技术" 英文翻译 : catheter technique
- "分项购入技术" 英文翻译 : unbundling of technology
- "滑翔再入技术" 英文翻译 : glide re-entry
- "机动再入技术" 英文翻译 : maneuverable re-entry
- "宽带接入技术" 英文翻译 : broadband access technologies
- "脉冲塞入技术" 英文翻译 : pulse stuffing technique
- "视频嵌入技术" 英文翻译 : video assembled
- "无线接入技术" 英文翻译 : radio access techniques; wireless access technology
- "信息输入技术" 英文翻译 : technology of inputting in english & chinese
- "不同的接入技术" 英文翻译 : different access technology
- "屏蔽剂渗入技术" 英文翻译 : dyed-in screener technique
- "适配信息输入技术" 英文翻译 : adaptive message-loading techniques
- "现代数据输入技术" 英文翻译 : modern data entry techniques
- "高速下链包接入技术" 英文翻译 : hsdpa
- "型计算机汉字输入技术" 英文翻译 : gtps
- "中英文信息输入技术" 英文翻译 : technology of inputting in english & chinese
- "中英文资讯输入技术" 英文翻译 : technology of inputting in english & chinese
例句与用法
- Implementation of remote thread injecting process
远程线程注入技术的实现 - Development trends in ion - implanted polymer films
离子注入技术改性聚合物薄膜的研究进展 - Application of ion implantation technology in anti - oxidation for aviation titanium alloy
离子注入技术在航空钛合金防氧化中的应用 - The positive charge assisted tunneling current can be greatly reduced by using appropriate substrate hot electron injection technique
利用衬底热电子注入技术,正电荷辅助隧穿电流可被大大的减弱。 - Improving on the rolling contact fatigue life and mechanical behaviors of bearing steel by nitrogen plasma immersion ion implantation
氮等离子体浸没离子注入技术改善轴承钢滚动接触疲劳寿命和机械性能的研究 - Such consumption was facilitated in large part by innovations great and small in processing and preservation , innovations ranging from mechanized disassembly lines and conveyor belts to brine injection technology
这一肉类消费增长的主要基础是食品加工和保鲜方面大大小小的各种发明,从自动化屠宰线、传送带直到盐水注入技术。 - Buying a digital indie can offer a holding company or traditional shop an instant injection of skilled interactive - - and ensure it won ' t miss out on that next digital project it might not be able to handle otherwise
购买数码独立商店可以为控股公司或传统商店直接注入技术的互动,以保证其不会错过下一个数码项目,不然它将有可能无法处理这个项目。 - The results were summarized as follows : ( 1 ) diamond - like carbon films could be fabricated by plasma source ion implantation ; it was found that different parameters such as the negative voltage , frequency , gas flux influenced sp3 bond ratio of dlcs , the paper described the effect in details and showed that diamond - like carbon films with increasing negative voltage , reducing frequency , appropriate gas flux got high proportion of sp3 bond ; dlcs prepared by psii contained a good deal of sic , the composition affected its properties ( such as the films hardness ) ; psii method could offer good adhesion to dlcs , but it caused the surface morphology to become asperity
研究结果表明: ( 1 )用全方位离子注入技术能够制备出类金刚石膜。在全方位离子注入技术中,不同的偏压、频率、气体流量都对薄膜中sp ~ 3键比例有所影响,文中对具体的影响进行了分析,发现偏压增加、频率降低和适中的气体流量可以制备出含sp ~ 3键较多的类金刚石膜;同时发现用全方位离子注入技术制备的类金刚石膜含有大量的sic成份,这对薄膜的性能(例如硬度)影响很大;用全方位离子注入制备的薄膜其结合力得到增强,但薄膜的表面形貌差。 - The author ' s main contributions are outlined as following : first , the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method . the changes of threshold voltage have been discussed under different stress conditions
主要研究结果如下:首先,利用衬底热空穴( shh )注入技术分别控制注入到超薄栅氧化层中的热电子和空穴的数量,定量研究了热电子和空穴注入对超薄栅氧化层击穿的影响,讨论了不同应力条件下的阈值电压变化。 - In the experimental studies on the behaviors of helium in aluminum , ion implantation technique was adopted to introduce helium with different energies , doses and distributions into some specimen of monocrystal , polycrystal , and preferred orientation as to the structure of aluminum . the energies varied in the range of 50ev to 4 . 87mev . the corresponding helium peak depths by trim simulation varied in the range of 16 angstrom to 20 . 7 microns
在金属铝中氦行为的实验研究中,首先用离子注入技术在单晶、多晶以及择优取向的铝样品中引入不同能量、剂量和浓度分布的he原子,能量范围从50ev 4 . 87mev , trim模拟的he浓度峰值的深度范围为16 (
- 更多例句: 1 2
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