电压升高的英文

• boosting
• voltage build-up
• voltage building-up
• voltage rise

• "电压"英文翻译    voltage; electric tension; e ...
• "升高"英文翻译    go up; rise; ascend
• "把电压升高的" 英文翻译 :    step-up
• "辅助电压升高电压" 英文翻译 :    boosted voltage
• "电压升高的, 递升的" 英文翻译 :    step-up
• "谐振的电压升高" 英文翻译 :    resonant voltage stup
• "泵压升高了" 英文翻译 :    the pumpressure has increased
• "大气压升高" 英文翻译 :    increased barometric pressure
• "静脉压升高" 英文翻译 :    increased venous pressure
• "颅内压升高" 英文翻译 :    increased intracranial pressure
• "收缩压升高" 英文翻译 :    spe; systole pressure elevated
• "舒张压升高" 英文翻译 :    diastolic pressure elevated
• "血压升高" 英文翻译 :    blood pressure increase; elevated blood pressure; elevation of blood pressure; increased blood pressure
• "压升高原" 英文翻译 :    plateau pressure
• "眼内压升高" 英文翻译 :    raised intraocular pressure
• "液压升高" 英文翻译 :    increased fluid pressure
• "右房压升高" 英文翻译 :    right atrial pressure elevation
• "眼压升高所致" 英文翻译 :    edridge-green theory of myopia
• "血浆渗透压升高" 英文翻译 :    increased plasma osmolarity
• "升高电压" 英文翻译 :    boosted voltage
• "表示眼压升高程度的符号" 英文翻译 :    stages of increased intraocular tension
• "电压升降调节器" 英文翻译 :    buck and boost regulator; buck-and-boost regulator
• "允许电压升降范围" 英文翻译 :    permissible voltage fluctuation
• "压升" 英文翻译 :    voltage rise
• "升高" 英文翻译 :    1.(向上升) go up; rise; ascend 我们看着飞机逐渐升高。 we watched the airplane ascend higher and higher.2.(提高) go up; promote; raise; heighten; power-up 血压升高 a rise in blood-pressure; 他的职位升高了。 he has been promoted. 温度升高了。 the temperature has gone up

• The mechanism for the decrease of saturated drain - source current ( idss ) due to sulfur passivation was also investigated
  这是硫钝化gaasmesfet击穿电压升高的主要机理。
• At full moon , the moon reflects charges that have passed the earth back into the ionosphere , raising the voltage
  在满月，月亮反射那些已经穿过地球的电荷使他们再回到电离层，使得电压升高。
• Compared with the lithium ion batteries using untreated graphite as anode material , those using modified graphites as anode materials have larger capacity , higher discharge voltage and better cycling capability
  以热处理或掺杂改性石墨为负极的锂离子电池的放电容量增加，放电中值电压升高，循环性能显著提高。
• This thesis built the models computing the working frequency over - voltage " operation over - voltage for 220kv fugai transmission line , calculates and analyzes working frequency over - voltage " operation over - voltage using emtp program and provides reasonable protection measures for the transmission line . furthermore , regulations method , traveling wave method and striking distance method are used to study and compare lightning - enduring capabilities of different types of pole in power transmission lines aiming at the fact that the lightning strike switching rate of 220kv fugai line is higher
  本文分别建立了计算220kv复盖线路的工频电压升高及操作过电压的计算模型，利用emtp程序对220kv复盖线路工频电压升高、投切空线过电压、投切空变过电压、单相故障过电压进行计算分析，并提出合理的防护措施。
• Research on adaptive damper system review the current er damper and active vibration control technology , the conception of converting vibration energy to energy damping vibration is presented . the adaptive er damper system has a rack and pinion mechanism which converts a linear motion of piston to a rotary motion
  采用齿轮、齿条机构将车辆的往复直线运动变换为旋转运动，再利用齿轮机构升高转速驱动永磁直流发电机产生电能，把电压升高后作用于电流变流体减振器，由此构成一个完整的自适应减振器系统。
• Based on the hydrodynamic energy transport model , the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied . the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth . research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ) , the threshold voltage increases , the sub - threshold characteristics and the drain current driving capability degrade , and the hot carrier immunity becomes better in deep - sub - micron pmosfet . the short - channel - effect suppression and hot - carrier - effect immunity are better , while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow . so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
  基于能量输运模型对由凹槽深度改变引起的负结深的变化对深亚微米槽栅pmosfet性能的影响进行了分析，对所得结果从器件内部物理机制上进行了讨论，最后与由漏源结深变化导致的负结深的改变对器件特性的影响进行了对比.研究结果表明随着负结深(凹槽深度)的增大，槽栅器件的阈值电压升高，亚阈斜率退化，漏极驱动能力减弱，器件短沟道效应的抑制更为有效，抗热载流子性能的提高较大，且器件的漏极驱动能力的退化要比改变结深小.因此，改变槽深加大负结深更有利于器件性能的提高