电子倍增的英文

• electron multiplication

• "电子"英文翻译    electron
• "倍增"英文翻译    double in amount
• "电子倍增管" 英文翻译 :    electron multiplier tube; multiplying tube; secondary emission multiplier
• "电子倍增器" 英文翻译 :    electron multiplier; electronic multiplier tube; electronmultiplier
• "磁电子倍增器" 英文翻译 :    magnetic electron multiplier
• "次级电子倍增" 英文翻译 :    secondary electron multiplication
• "电子倍增放电" 英文翻译 :    multipactor discharge
• "电子倍增极带" 英文翻译 :    dynode strip
• "电子倍增器段" 英文翻译 :    electron multiplier section
• "电子倍增器门" 英文翻译 :    electron multiplier gate
• "电子倍增作用" 英文翻译 :    electron multiplication
• "光电子倍增管" 英文翻译 :    photoelectron-multiplier-tube
• "通道电子倍增" 英文翻译 :    channel electron multiplication
• "信道电子倍增" 英文翻译 :    cem channel electron multiplication
• "多打拿极电子倍增器，多倍增极电子倍增器" 英文翻译 :    multipdynode electron multiplier
• "半导体电子倍增器" 英文翻译 :    semiconductor electron multiplier
• "槽式电子倍增器" 英文翻译 :    channel type electron multiplier
• "次级电子倍增击穿" 英文翻译 :    electron resonance breakdown; multipactor breakdown
• "次级电子倍增器" 英文翻译 :    secondary multiplier; secondary-electron multiplier
• "次级电子倍增效应" 英文翻译 :    multipacting; multipactor effect
• "电子倍增光电管" 英文翻译 :    electron-multiplier photo tube
• "电子倍增器电极" 英文翻译 :    dynode
• "电子倍增器光电池" 英文翻译 :    electron multiplier photocell
• "电子倍增器数组" 英文翻译 :    electron multiplier array
• "电子倍增器阵列" 英文翻译 :    electron multiplier array

• Electronmultiplier cells are superior to ordinary photocells .
  电子倍增管比普通的光电管好。
• Microchannel electron multiplier
  微通道电子倍增管
• Channel electron multiplication
  通道电子倍增
• In lab the most often used is electron multiplier and semiconductor type
  实验室常用的是电子倍增器和半导体型光二极管。
• Its main purpose is to know different kinds of detecting method . generally , euv and soft x - ray photodetector included five types : ionization gas , semiconductor , electron multiplier and film
  总的说来极紫外和软x射线光电探测器的类型有气体电离型、半导体型、电子倍增器以及极紫外和软x射线胶片(干板) 。
• The qualification of multipactor and the characteristic of the angle and velocity of secondary electron were study . bring forward a improved model of multipactor and solve it by a random sample made by monte carlo , as a result , a critical curve of multipactor was gained
  提出了一个改进型的次级电子倍增研究模型,利用蒙特卡罗法生成的随机样本来求解这个模型,得到了工作在2 . 85ghz的介质片的次级电子倍增敏感度曲线。
• A new model for the growth stage of surface flashover has been developed according to the experimental results , which is based on the solid band theory . it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization , the other is the micro - discharge caused by the trap centers of insulator . the trap cente
  电子倍增的过程与材料的表面态直接相关，材料微观结构的变化和材料的表面处理都能够导致材料表面态的变化，引起材料的表面二次电子发射系数以及材料中陷阶密度和分布的改变，从而影响了电子倍增的过程，并进一步改变或影响了沿面闪络的发展过程。