电子晶体管的英文

• transistor

• "电子"英文翻译    electron
• "晶体管"英文翻译    transistor; crystal valve
• "单电子晶体管" 英文翻译 :    single electron transistor
• "光电子晶体管" 英文翻译 :    optoelectronic transistor
• "热电子晶体管" 英文翻译 :    hot electron transistor; hot-electron tra istor; hot-electron transistor
• "电子晶体学" 英文翻译 :    electron crystallography
• "双载子晶体管" 英文翻译 :    bipolar junction transistor bjt
• "异质接面双载子晶体管" 英文翻译 :    hetero-junction bipolar transistor hbt
• "电子学晶体管" 英文翻译 :    electron-optical transistor
• "晶体管电子学" 英文翻译 :    transistor electronics
• "高电子迁移晶体管" 英文翻译 :    high electron mobility transistor
• "超离子晶体" 英文翻译 :    superionic crystal
• "非离子晶体" 英文翻译 :    non ionic crystal
• "分子晶体" 英文翻译 :    molecular crystal; molecularcrystal; van der waals crystals
• "高分子晶体" 英文翻译 :    polymer crystal
• "光子晶体" 英文翻译 :    photonic crystals
• "克分子晶体" 英文翻译 :    gram-molecule crystal
• "离子晶体" 英文翻译 :    ionic crystal; ionic solids; ioniccrystal
• "量子晶体" 英文翻译 :    quantum crystal
• "声子晶体" 英文翻译 :    phononic crystal
• "兄子晶体学" 英文翻译 :    small molecule crystallography
• "原子晶体" 英文翻译 :    atomic crystal; covalent-network solids
• "中子晶体学" 英文翻译 :    neutron crystallography
• "称为声子晶体" 英文翻译 :    phononic crystals
• "二元离子晶体" 英文翻译 :    binary ionic crystal

• The model of the set devices and circuits has been established
  建立了单电子晶体管的器件和电路模型。
• Design of field - effect nano - transistors and measurement of their electrical property
  场效应纳电子晶体管的构造和电学特性测量
• It is found that the height of the metal electrode , the distance between the source and drain electrodes , the thickness of the sio
  研究了场效应纳电子晶体管构造过程中金属电极的结构设计，源-漏电极高度sio
• 2 . in the first , the successfully fabricated si - based sets on p - type simox substrate are based on the process in china . the technology process is also offered for the controlled fabrication of single sets
  利用这些纳米结构的制备技术，在p型simox硅片上成功地制造了硅量子点单电子晶体管，形成了一套制备硅单电子晶体管的工艺方法。
• Characteristic simulation is performed by using simon and pspice . the relationship between characteristics and parameters such as capacity and resistance of the set is analyzed , which provides a theoretical basis for optimal design and fabrication of devices
  利用simon软件和pspice软件分别进行了一些计算机模拟分析，探索了单电子晶体管的参数与其特性的关系，为器件的优化设计和制造提供一定的理论依据。
• The development of quantum mechanics in the 1920s , for example , and its subsequent application in the development of the transistor have made possible the revolutions in computing , electronics , and nanotechnology that have shaped modern society and industry
  例如，二十世纪二十年代，量子力学的快速发展，以及随后在电子晶体管技术方面的应用，促成了计算机技术、电子学、以及纳米技术的革命，从而形成了现代社会与工业。
• The fabrication of the nano - structures and the study of nanoelectronic devices ( single electron transistor - set , single electron memory , etc . ) are one of the most important projects of the nanoelectronics and nanotechnology , of a study field with most vitality , progressive future , and it may bring magnitude effect to new technology revolution and industry in future
  纳米结构的制备和纳米电子器件(单电子晶体管、单电子存储器等单电子器件)的研究是纳米电子技术中最重要的研究内容之一，是最具有生命力、最具有发展前途，对未来新技术革命和产业可能带来革命性作用的研究领域之一。
• The paper are investigating several alternatives for example quantum dot cellular automata and single electron transistor to substitute conventional field effect transistors ( fet ’ s ) for ultra large scale integrated circuit ; and i take research on the modeling of single electron transistor and single electron cicuit
  基于以上考虑,本文研究一些新的基于量子力学原理的器件如量子点细胞自动机( qca ) 、单电子晶体管( set )取代以fet器件为基础超大规模集成电路,主要在单电子晶体管建模和单电子电路综合做了一些研究工作。
• In this thesis , some items on fabrication of nano - structures and study of si - based set such as fabrication technique of nano - structures and application on set , set fabrication processes , characteristics testing , simulation of set have been discussed . in brief , the following major creative results have been obtained : 1
  本文对纳米结构的制备方法以及纳米结构在制造硅单电子晶体管上的应用、单电子晶体管的制造工艺、特性测量、测量系统的建立和单电子晶体管特性的计算机模拟等方面进行了系统的研究，取得了以下创新性的成果： 1
• First , the paper researchs the spice simulation of single electron transistor based on curve approach and quasi - analytical model of single electron transisor , and simulate characteristic of single electon transistor with matlab tool . secondly , the paper combine spice simulation program with master equation of single electron transistor , put forward novel spice simulation method of single electron transistor based on master equation , by choose master state of single electron transistor and build master equation of single electron transistor , afterward gain nonlinear cortrolled source of spice model of single electron transistor by solve the master equation of single electron transistor and simulate v - i characteristic of single electon transistor by spice program , it ’ s result prove the method is availability precision comparing with master equation method
  然后在此基础上提出了基于主方程法单电子晶体管spice模拟新方法,本论文结合当前电路模拟软件spice程序和单电子晶体管主方程模拟算法,通过选择单电子岛电子数的主要状态,建立单电子晶体管主方程,然后求解主方程,求得单电子晶体管spice等效模型的受控源的非线性函数,然后利用集成电路辅助分析软件spice的abm (模拟行为建模)建立单电子晶体管( set ) spice等效模型,利用set的等效模型对单电子晶体管v - i特性进行仿真,实验证明此方法与直接解主方程法相比具有一定的精度。