界面缺陷的英文

• boundary defect

• "界面"英文翻译    interface; boundary; limitin ...
• "缺陷"英文翻译    defect; flaw
• "面缺陷" 英文翻译 :    area defect; interface defect; planar defect; plane defect; plane fault
• "表面缺陷" 英文翻译 :    crizzling; surface blemishes; surface defeat; surface defect; surface flaw; surface imperfection
• "近表面缺陷" 英文翻译 :    near surface defect; near surface flaw; near surface flow; nearsurfacedefect
• "皮面缺陷" 英文翻译 :    defects surface
• "型表面缺陷" 英文翻译 :    crowfeet
• "形表面缺陷" 英文翻译 :    check marks; fishhooks
• "v 形表面缺陷" 英文翻译 :    check marks
• "凹坑表面缺陷" 英文翻译 :    stain
• "表面缺陷，瑕疵，斑点" 英文翻译 :    blemish
• "表面缺陷清除" 英文翻译 :    surface defect removal
• "表面缺陷清理" 英文翻译 :    deseaming; dimpling
• "光学表面缺陷" 英文翻译 :    beauty defect
• "宏观表面缺陷" 英文翻译 :    macroscopic irregularity
• "面缺陷修复术" 英文翻译 :    repair for facial weakness
• "容器表面缺陷" 英文翻译 :    irregularities in vessel surface
• "修理表面缺陷" 英文翻译 :    deseaming
• "修整表面缺陷" 英文翻译 :    chipping
• "铸件表面缺陷" 英文翻译 :    casting surface defect
• "钻杆表面缺陷" 英文翻译 :    drillpipe surface imperfection
• "半圆开表面缺陷" 英文翻译 :    semicircular surface flaw
• "半圆形表面缺陷" 英文翻译 :    semicircular surface flaw
• "表面缺陷清除；嵌接；割口" 英文翻译 :    scarfing
• "表面缺陷扫描仪" 英文翻译 :    surface scanner

• The results show that only the crystals that can react with pu display ptc effect , the adding easyly crystal show no ptc effect
  这说明只有参加化学反应的晶体才具有明显的ptc效应，简单添加型的晶体由于体系界面缺陷较大，不产生ptc效应。
• Density of composites was varied with the amount of organic and grain size of ultramicro iron . influence of microstructure on and was discussed with the interface defect mechanism
  指出了复合粒子密度的变化是由于有机相含量与超微铁粒径的变化引起的，并用界面缺陷的理论探讨了微观结构对与的影响。
• We researched fabrication at different asputtering and annealing atmosphere , the different process conduced different electrical properties . we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4 . the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc . there are different leakage current mechanism at influence of sil . c ; 5
  研究表明，在优化工艺条件下制备的hfo _ 2介质层中，衬底注入条件下由于其较低的体和界面缺陷密度，漏电流的输运机制主要以schottky发射为主; silc效应导致hfoz / si界面缺陷态的增加，从而使得衬底注入条件下，栅泄漏电流机制不仅有schottky发射还有f一p发射机制起主要作用; 5 )初步研究了氮化的hfo : ( hroxny )栅介质的电学特征。
• When a mutually doped transitional layer is introduced , no matter it is added to the interspace of electron transport layer and hole transport layer or to the interspace of the hole transport layer and hole inject layer , it can reduce the defects of the interface and result in the increase of brightness and the decrease of the operating voltage obviously
  我们在器件中引入了互掺过渡层结构，发现不管在电子传输层和空穴传输层之间，还是在空穴传输层和空穴注入层之间采用这样的掺杂结构，都能够有效减少有机层间的界面缺陷态，明显提高了器件的亮度，降低了器件的工作电压。