短沟的英文

• snlci brevis

• "短"英文翻译    short; brief
• "沟"英文翻译    channel; ditch; gutter; tren ...
• "短沟道" 英文翻译 :    short channel
• "短沟对虾" 英文翻译 :    green tiger prawn
• "短沟蜷螺属" 英文翻译 :    semisulcospira
• "短沟蜷属" 英文翻译 :    semisulcospira
• "方格短沟蜷" 英文翻译 :    melania cancellata
• "具短沟的" 英文翻译 :    brevicolpate
• "具极短沟的" 英文翻译 :    brevissimicolpate
• "方格短沟蜷螺" 英文翻译 :    semisulcospira cancellata
• "放逸短沟蜷螺" 英文翻译 :    semisulcospira libertina
• "黑龙江短沟蜷螺" 英文翻译 :    semisulcospira amurensis
• "黑螺科短沟蜷属" 英文翻译 :    semisulcospira
• "短沟道场效应晶体管" 英文翻译 :    short channel fet
• "短钩须鳎" 英文翻译 :    bloch's tonguefihs
• "短钩拳" 英文翻译 :    short hook
• "短共有重复序列超基因家族" 英文翻译 :    scr-superfamily
• "短弓状纤维" 英文翻译 :    short arcuate fiber
• "短弓手" 英文翻译 :    shortbowman

• We represent a temperature model of surface carrier mobility of short channel most after thinking about kinds of dispersion effect
  在考虑了各种散射效应对迁移率的影响后，提出了短沟道most表面载流子迁移率的温度模型。
• So it is valuable to research the high temperature characteristic of microelectronics devices . this paper discussed the electrical characteristic of short channel most at very high temperature
  本文以短沟道most电学参数的温度特性为研究对象，对高温短沟道most的电学特性进行了深入的探讨。
• This paper chooses bsim3 ( berkeley short - channel igfet model ) the model to be extracted , which is for short channel mos field effect transistor specially . these works are presented in this paper . 1
  本论文选取目前业界占主流地位的bsim3 ( berkeleyshort - channeligfetmodel )为将要提取的模型，它是专门为短沟道mos场效应晶体管而开发的一种模型。
• We discussed the influence of channel - length modulation effect and dibl effect to temperature behavior of source - drain current , gave a expressions for studying the temperature characteristic of source - drain current , and deduced a ztc point expression
  研究了沟长调制效应和漏致势垒降低效应对漏源电流温度特性的影响，给出了一个用于研究漏源电流温度特性的电流公式；并推导了短沟道most的ztc点公式。
• We deduced a expressions for threshold voltage temperature coefficient of short channel most . and found that the coefficient is almost unchanged in a quite wide temperature range which is higher than the room temperature , but it increased sharply at high temperature
  推导了了一个短沟道most阈值电压温度系数表达式；发现短沟道most阈值电压温度系数在高于室温的一个较宽的温区内近似不变，但在温度较高时迅速增大。
• The factors limiting the frequency band of the wide - band amplifier are introduced . through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics , a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit , current pattern circuit and frequency characteristics are analyzed . according to the linear theory of transconductance which is applied in the bit circuit , the current pattern amplifier circuit , current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward
  介绍了限制宽带放大器频带宽度的因素，通过分析mosfet的本征参数、寄生参数对频率特性的影响，提出了采用短沟器件、使mosfet工作在饱和区、抬高栅源电压等提高mosfet特征频率的方法；分析了不同电路组态对放大器频率特性的影响、节点电压对电压模电路、电流模电路频率特性的不同影响，根据应用于双极晶体管电路的跨导线性原理，提出了采用mosfet构成的电流模放大电路、电流传输电路、输出电路以及由它们所组成的宽带放大器，获得了良好的频率响应。
• The source drain extension ( sde ) structure and its reliability are thoroughly studied . first , it is shown that the sde structure can suppress short channel effect effectively and the parasitic resistance at the sde region has an effect on performance . it is proposed that increasing the dose condition in the sde region can reduce the parasitic resistance and should be adopted to achieve high performance for deep submicron devices
  本文对深亚微米源漏扩展mos器件结构及其可靠性进行了深入研究，首先通过仿真验证了源漏扩展( sde )结构对短沟道效应的抑制， sde区寄生电阻对器件性能的影响以及sde区掺杂浓度的提高对器件性能的改善，指出了器件尺寸进一步减小后，提高源漏扩展区掺杂浓度的必要性。
• The model of threshold voltage solves the problems of nonuniformly doped channel , short channel effect , implantation for adjusting threshold voltage , edge capacitance of gate , etc . not only the model can be used in ldmos , but it can perfectly describe the short channel effect of threshold voltage for all other mos devices
  其中，阈值电压模型解决了沟道非均匀掺杂、短沟道效应，调阈值注入，栅边缘电容等问题。该模型不仅适用于ldmos ，也可以很好地描述所有的mos器件阈值电压的短沟道效应，严格证明了短沟道效应会引起阈值电压的减小。
• Compared with the similar research results , the weighted control ic here has the following characteristics : ( 1 ) the circuit structure is simpler ; ( 2 ) the chip ' s fabrication is compatible with standard cmos process ; ( 3 ) n - mosfets with high w / l ratio and short channels are used for weighting and output to reduce the insertion loss ; ( 4 ) the weighting factor varies in a relatively wide range with the controlling signals ; ( 5 ) input and output impedance approach 50 in low frequency ( e . g . 50mhz ) , while in higher frequency they slightly deviate from 50 , hence the energy reflection lower than 0 . 1 ; ( 6 ) it completes the functions of sampling , weighting , controlling and summing of high frequency analog signals
  它的加权控制电路与已报道的相关电路相比具有如下特点：电路结构简单；制造工艺与普通cmos工艺兼容：短沟道，高宽长比的nmos晶体管具有低的通导电阻，将其作为加权、输出器件可降低由电路引起的插入损耗；改变加权信号，可实现权值在较大范围内的连续变化；输入、输出阻抗在低频(如50mhz )下接近50 ，而在高频下略有偏离50 ，但反射系数均低于0 . 1 ；实现了对高频信号的取样、加权、控制、叠加功能的迭加。
• This paper also presented the structure of soi bjmosfet and discussed and analyzed the advantages of this device by comparing with the bulk bjmosfet . its advantages are as fellow : no latch - up effect , better capability of resisting invalidation , much smaller parasitic capacitance , weaker hot - carrier effect and short - channel effects , and simpler technics , and so on
  通过与体硅bjmosfet比较，讨论和分析了soibjmosfet的优点：无闩锁效应、抗软失效能力强、寄生电容大大降低、热载流子效应减弱、减弱了短沟道效应、工艺简单等。