硅层的英文

• silica

• "硅"英文翻译    silicon
• "层"英文翻译    I storey; tier; stratum
• "硅层土" 英文翻译 :    siliceous earth
• "单晶硅层" 英文翻译 :    single crystalline silicon layer
• "多晶硅层" 英文翻译 :    polycrystalline silicon layer; polysilicon layer
• "二氧化硅层" 英文翻译 :    layer, silicon dioxide; silicon-dioxide layer; silicondioxide layerr
• "氮化硅层衬底" 英文翻译 :    silicon nitride substrate
• "多晶硅层间介质体" 英文翻译 :    interpoly dielectric
• "二氧化硅层针孔" 英文翻译 :    silox pinhole
• "有机硅层压塑料" 英文翻译 :    silicone laminate
• "有机硅层压玻璃布板" 英文翻译 :    silicone resin glass laminated sheets
• "硅草酸,硅乙二酸" 英文翻译 :    silico-oxalic acid
• "硅掺杂" 英文翻译 :    silicon doping
• "硅草科" 英文翻译 :    thurniaceae
• "硅场效应晶体管" 英文翻译 :    silicon field-effect tra istor; silicon field-effect transistor
• "硅材料公司" 英文翻译 :    asimi
• "硅长斑石" 英文翻译 :    felsophyne
• "硅不完整性" 英文翻译 :    silicon imperfection
• "硅长石" 英文翻译 :    felsite
• "硅玻璃碗" 英文翻译 :    kieselglasschale silica glass bowl

• Bonded wafers - two silicon wafers that have been bonded together by silicon dioxide , which acts as an insulating layer
  绑定晶圆片-两个二过通片圆晶氧化硅层结合到一起，作为绝缘层。
• In light of them , matching pmosfet and nmosfet with strained si channel were designed . 2 . the epitaxy layers including lt ( low temperature ) si grow technicsare discussed
  2 .研究了包括400下分子束外延法生长100nm的低温硅层的各外延层生长技术。
• Up to present we have prepared the epitaxial simox substrate ( i layer 0 . 37um , silicon layer 2 . 8um ) , and done the circuit design , process integration , device simulation and some layout design )
  本项目目前已完成了simox外延衬底的制备（ i层0 . 37um ，外延硅层2 . 8um ） ，以及功率开关集成电路的电路设计，工艺设计和部分版图设计。
• It also has short protection and voltage overshot protection block . devices and ics based on esoi have the advantages of not only cheaper substrate , good performance of soi technology , but also obtaining a certain breakdown voltage and optimization of self - heating effect
  基于esoi的器件及集成电路不仅衬底材料制备工艺简单，硅层厚度均匀性好，器件及电路特性具有soi结构的优点，而且还兼顾一定的耐压，对自加热效应也得到优化。
• Ps radiation mechanism has been discussed and investigated for many years and many theoretical models have been proposed to describe photoluminescence in porous silicon , for instance quantum confinement effect model , polysilanes model , siloxen and its derivant , surfacial states model and quantum confinement - light center model etc . in addition , study status of ps at present is addressed and applied problems in some fields are analyzed in this section
  多年来，人们对多孔硅发光机理一直进行着坚持不懈的探讨和研究，提出了许多种解释多孔硅层( psl )发光的模型，典型的有下列几种：量子限制模型、硅-氢键或多硅烷( polysilanes )的发光、硅氧烯及其衍生物的发光、表面态模型和量子限制-发光中心模型。
• After structure design aimed to high transconductance , parameters of device structure are modified in detail . the simulation results of soi nmos with strained si channel show great enhancements in drain current , effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet . the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide
  其次,根据器件参量对阈值电压和输出特性的影响,以提高器件的跨导和电流驱动能力为目的设计了strained - soimosfet器件结构,详细分析栅极类型和栅氧化层厚度、应变硅层厚度、 ge组分、埋氧层深度和厚度以及掺杂浓度的取值,对器件进行优化设计。