硅栅的英文

• silicon gate

• "硅"英文翻译    silicon
• "栅"英文翻译    railings; paling; palisade; ...
• "硅栅极" 英文翻译 :    silicon gate
• "氮化硅栅" 英文翻译 :    nitride gate
• "多晶硅栅" 英文翻译 :    polysilicon gate
• "多晶硅栅极" 英文翻译 :    polycide mos gate; polysilicon gate
• "硅栅工艺" 英文翻译 :    silicon gate technology
• "硅栅结构" 英文翻译 :    silicon gate structure
• "硅栅晶体管" 英文翻译 :    sgt; silicon gate transistor
• "片状硅栅" 英文翻译 :    chip silicon gate
• "型多晶硅栅" 英文翻译 :    poly gate
• "多晶硅栅工艺" 英文翻译 :    polysilicon gate process
• "硅栅加工技术" 英文翻译 :    silicon gate processing technique
• "硅化物多晶硅栅" 英文翻译 :    silicided polysilicon gate
• "硅栅自对准工艺" 英文翻译 :    silicon gate self-aligned technology
• "多晶硅栅电荷耦合掐" 英文翻译 :    polysilicon gate ccd
• "多晶硅栅金属氧化物半导体" 英文翻译 :    polycrystalline silicon gate mos
• "改进型自对准多晶硅栅工艺" 英文翻译 :    advanced polysilicon self aligned process; apsa
• "硅栅互补金属氧化物半导体" 英文翻译 :    silicon gate complementary mos
• "硅栅金属氧化物半导体工艺" 英文翻译 :    silicon gate mos process; silicon gate technology
• "绝缘硅栅互补金属氧化物半导体" 英文翻译 :    isolated silicon gate cmos
• "双层多晶硅栅金属氧化物半导体工艺" 英文翻译 :    double poly process
• "硅栅自对准结隔离互补金属氧化物半导体" 英文翻译 :    silicon gate self aligned junction isolated cmos
• "硅闸流管" 英文翻译 :    silicon thyratron
• "硅渣" 英文翻译 :    white residue; white slime
• "硅增强视像管" 英文翻译 :    silicon intensifier vidicon

• A breakdown model of thin drift region ldmos with a step doping profile
  器件多晶硅栅量子效应的解析模型
• Applying silicon gate technology , the chip has a lower value in power consumption than the products made by aluminum gate technology
  由于采用硅栅工艺，该芯片比市场上曾经流行过的铝栅产品功耗更低。
• In the paper , we introduced how to draw layout based on the standard of 0 . 6 m , 5v cmos given by csc semiconductor ltd and finish the work in candence
  芯片版图的设计中采用了绿华半导体公司的0 . 6 m , 5vcmos工艺库,工艺基本特征为多晶硅栅,单层金属布线。
• Secondly , the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study . especially , the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate , irradiation dose , irradiation temperature , bias voltage , device structure as well as annealing condition is explored emphatically
  在此基础上，对bf _ 2 ~ +注入硅栅si sio _ 2系统低剂量率辐照效应进行了深入系统的研究，着重研究了bf _ 2 ~ -注入mos管阈值电压漂移( vth和vit 、 vot )与辐照剂量率、辐照总剂量、辐照温度、偏置电场、器件结构以及退火条件的依赖关系。
• Wirings of the poly layer are always utilized under the silicon grid technics . to control the macro - cell signal delay and improve signal integrality , the crossing among different nets must be averagely distributed to reduce the number of layer permutation . the metal layer wirings should be maximized and the length of poly layer wiring in each net should be minimized
  硅栅工艺晶体管级布线利用多晶层走线，为了控制宏单元时延性能及改善信号完整性形态，关键是不同线网间交叉的均衡分配以减少走线的换层次数，最大化金属层走线以及每一线网多晶层走线长度的有效控制。
• By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits , type of current density ratio compensation 、 weak inversion type and type of poly gate work function , a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper . applying the negative feedback technology , an output buffer and multiply by - 2 - circuits are designed , which improve the current driving capability
  然后通过比较和分析电流密度比补偿型、弱反型工作型和多晶硅栅功函数差型三种带隙电压基准源电路结构的优缺点,确定了电流密度比补偿型共源共栅结构作为本设计核心电路结构,运用负反馈技术设计了基准输出缓冲电路、输出电压倍乘电路,改善了核心电路的带负载能力和电流驱动能力。

• 硅栅的日语：シリコンゲート