硅膜的英文

• silicon film
  ◇硅膜集成电路 silicon film ic

• "硅"英文翻译    silicon
• "膜"英文翻译    membrane
• "二氧化硅膜" 英文翻译 :    silicon dioxide layer
• "硅膜集成电路" 英文翻译 :    silicon film ic
• "生长硅膜晶体管" 英文翻译 :    grown-film silicon transistor
• "边缘限定硅膜生长工艺" 英文翻译 :    edge-defined film-fed growth (efg)
• "硅模型" 英文翻译 :    exaflex injection type
• "硅钠" 英文翻译 :    silicate of soda
• "硅灭鼠" 英文翻译 :    silatranes
• "硅钠钡钛石" 英文翻译 :    joaquinite
• "硅面结型晶体管" 英文翻译 :    silicon junction transister; siliconjunctiontransister
• "硅钠钙石" 英文翻译 :    fedorite
• "硅面积" 英文翻译 :    silicon area
• "硅钠矿" 英文翻译 :    soddite
• "硅棉碴" 英文翻译 :    silicate cotton

• Preparation and performance of pdms membranes for pervaporation desulfurization
  有机硅膜的制备及其渗透汽化脱硫的研究
• Preparation of silicone polymer membrane for separation of solvents from lube oil
  分离润滑油中脱蜡溶剂的有机硅膜的制备
• Fractal phenomenon during fabricating ultrthin silicon membrane using etching - stop
  硅腐蚀停止技术制备超薄硅膜中的分形现象
• Short communication electro - red - luminescence from silicon oxide films embedded nm carbon particles and nm silicon particles
  镶嵌纳米碳粒和硅粒氧化硅膜的电致红光发射研究
• The nanoporous silicon membrane is thermally , chemically , mechanically stable and retrievable and can he reused
  纳米多孔硅膜具有优异的耐热性和化学稳定性，且可回收利用。
• In this paper , the research of the dielectric isolation of over - 20 m - film soi is concentrated on the structure , technology and experiment
  论文对硅膜厚度大于20 m的soi介质隔离问题从结构、工艺和实验三个方面进行了深入研究。
• The nanoporous silicon membrane can be used as drug carrier , immuniosolating biocapsules , nanoporous silicon micromirror and biosensors in medical field
  在医学上的纳米多孔硅膜可作为药物载体、免疫隔离生物胶囊、纳米硅微镜和纳米多孔硅生物传感器。
• Fabricating the nanoporous silicon membrane with nanotechnology and bio - mems technology , the thickness of membrane , pore size and distribution , geometry shape and porosity can precisely controlled
  摘要采用纳米技术和生物微电子机械系统技术制备纳米多孔硅膜，可准确控制膜的厚度、几何形状、孔大小、孔分布和孔隙率。
• Influences of the parameters on device performance such as thickness of strained si , ge content , channel doping and thickness of buried oxide are discussed based on given models . the models could be very helpful for device design
  根据所建立的模型,针对硅膜厚度、 ge组分、掺杂浓度和埋氧层厚度等参量对薄膜全耗尽型strained - soimosfet器件性能的影响进行详细讨论,为器件结构设计提供了理论基础。
• The paper is mainly focused on two fields . one is the formation of any thick porous silicon ( ps ) layers , which is content with 1c process . the other is the low - loss performance of passive elements fabricated on ps / oxidized porous silicon ( ops ) inter - layers under microwave operation
  本论文主要的研究内容分为两个方面：其一是厚度可控的与ic工艺兼容的多孔硅膜的形成技术研究；其二是研究在多孔硅氧化多孔硅介质膜上制备无源器件的微波低损耗特性之可行性。