磷化铟的英文
发音:
"磷化铟"怎么读用"磷化铟"造句
英文翻译手机版
- indium pho hide
- indium phosphide
- inp
- "磷化"英文翻译 bonderizing; parkerizing pro ...
- "铟"英文翻译 indium
- "磷化铟单晶" 英文翻译 : indium pho hide single crystal; indium phosphide single crystal
- "磷化铟镓铝" 英文翻译 : algainp; ingaalp
- "磷化" 英文翻译 : bonderizing; parkerizing process◇磷化层 [涂] phosphate coating; 磷化处理 bonderizing; coslettise (钢铁制品表面防锈处理); parkering; parkerizing; 磷化钙 calcium phosphide; 磷化铝 celphos; delicia; detia gas-ex-b; aluminum phosphide; 磷化硼 [半] boron phosphide; 磷化铅 lead phosphide; 磷化铁 iron phosphide; 磷化铜 [冶金学] phosphorized copper; 磷化锌 [无机化学] stutox; zinc phosphide; 磷化铟 indium phosphide; 磷化作用 phosphorization
- "氮化铟" 英文翻译 : indium nitride; indiumnitride; ingan; inn
- "硫化铟" 英文翻译 : indium sulfide
- "卤化铟" 英文翻译 : indium halide
- "氯化铟" 英文翻译 : indium chloride 111in
- "砷化铟" 英文翻译 : indium arsenide
- "锑化铟" 英文翻译 : indium antimonide; indium stibide; lndium antimonide
- "氧化铟" 英文翻译 : indium oxide
- "溴化铟" 英文翻译 : indium bromide
- "磷化层" 英文翻译 : phosphate coating
- "磷化钙" 英文翻译 : calcium phosphide
- "磷化剂" 英文翻译 : bonderite
- "磷化钾" 英文翻译 : potassium phosphide
- "磷化铝" 英文翻译 : aluminium phosphide; aluminum phosphide; delicia gastoxin; phostoxin
- "磷化镁" 英文翻译 : magnesium phosphide
- "磷化钠" 英文翻译 : sodium phosphide
- "磷化镍" 英文翻译 : nickel phosphide
- "磷化硼" 英文翻译 : boron phosphide; boron phosphite
- "磷化铅" 英文翻译 : lead phosphide
- "磷化氢" 英文翻译 : h3p; hydrogen phosphide; hydrogen phosphite; ph3; pho hine; phosphene; phosphine; phosphoretted hydrogen; phosphuretted hydrogen
- "磷化砷" 英文翻译 : arsenic phosphide; arsenous phosphide
例句与用法
- Preparation of semi - insulating material by annealing undoped inp
高温退火非掺杂磷化铟制备半绝缘材料 - Investigation of residual donor defects in undoped and fe - doped lec inp
非掺及掺铁磷化铟中的残留施主缺陷 - Non - stoichiometry related deep level defects in semi - insulating inp
半绝缘磷化铟中与非化学配比有关的深能级缺陷 - Influence of fe doping concentration on some properties of semi - insulating inp
掺铁浓度对半绝缘磷化铟的一些性质的影响 - Preparation of indium phosphide nanocrystallite and investigation of its optical properties
磷化铟纳米晶的制备及光学性质研究 - Such an advance would enable engineers to incorporate both electronic and optical devices onto cheap silicon chips rather than being compelled to employ costly - to - make lasers based on “ exotic ” semiconductor materials such as gallium arsenide or indium phosphide
如果成功,工程师就能在成本低廉的矽晶片上同时制作电子和光学装置,不需使用砷化镓或磷化铟等稀有半导体材料,制作成本高昂的半导体雷射。 - For the requirement of more negative differential resistance ( ndr ) routes , three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition , and high - field domain in the superlattice is formed under sufficiently large operation bias
为获得?多轨迹的负微分电阻,本研究组件使用?相当薄之砷化铟镓?子井,可使四周期磷化铟/砷化铟镓超晶格结构在平带情况下形成三个分?的?子化能阶,且于足够大的操作偏压下在该超晶格结构中形成?高场区域。
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