离子源的的英文

• ionogenic

• "离子源"英文翻译    ion gun; ion source; ionizat ...
• "的"英文翻译    4次方是 The fourth power of 2 i ...
• "离子源的均匀度" 英文翻译 :    homogeneity of ion source
• "离子源" 英文翻译 :    io ource; ionization source; source ion
• "磁离子源" 英文翻译 :    magnetic ion source
• "等离子源" 英文翻译 :    plasma source
• "电弧离子源" 英文翻译 :    arc source
• "负离子源" 英文翻译 :    negative ion source
• "高离子源" 英文翻译 :    high-intensity ion source
• "高频离子源" 英文翻译 :    radio frequency ion source
• "化学离子源" 英文翻译 :    chemical ionization source; chemical ionzation source
• "火花离子源" 英文翻译 :    spark ionization source; sparking ionization source
• "激光离子源" 英文翻译 :    laser ion source
• "极化离子源" 英文翻译 :    polarized ion source
• "聚焦离子源" 英文翻译 :    focused beam ion source; focused ion source
• "离子源参数" 英文翻译 :    source parameters
• "离子源磁铁" 英文翻译 :    ion source magnet
• "离子源头" 英文翻译 :    ion-source head
• "离子源狭缝" 英文翻译 :    source slit
• "炉状离子源" 英文翻译 :    furnace source
• "裸式离子源" 英文翻译 :    nude source; open source
• "脉冲离子源" 英文翻译 :    pulsed ion source
• "内炉离子源" 英文翻译 :    internal furnace ion source
• "潘宁离子源" 英文翻译 :    penning ion source
• "彭宁离子源" 英文翻译 :    oscillating electron ion source; oscillatingelectronionsource; penning ion source

• Characteristics of rf ion source electromagnetic field
  型放电离子源的场特性
• Construction of electrostatic accelerator rf ion source
  用于静电加速器的高频离子源的设计和调试
• The theory of ion etching and the parameter of ion source designing are discussed in detail
  并且详细介绍了离子刻蚀和离子源的原理。
• We suggest that optimization of the tip geometry considerably improve the performance of the liquid metal ion source
  从而为液态金属离子源的设计提供了一个有效的辅助工具。
• Various factors , including the apex geometry of the emitter tip , the protrusion length , and the simulated charge distribution , were considered
  因而对其发射系统进行仿真分析，可以很好地指导液态金属离子源的设计制造。
• Electric field of the emission system of a liquid metal ion source was simulated , based on the conventional dynamic protrusion model and the widely used charge simulation method
  摘要发射系统是液态金属离子源的关键部件之一，它的性能的优劣直接影响到整个离子源的工作稳定性和可靠性。
• ( 4 ) chapter vi . the theory of ion curren extraction of rf ion source is investigated , the reason of emission surface formation and its effect on ion curren extraction are reasearched emphatically
  ( 4 )对高频离子源的束流引出原理作了理论推导和分析，着重研究了发射面的形成及其对引出束流特性的影响。
• The conclusion that ez is more important during the breakdown of rf ion source is made out by comparing ez and e 6 before breakdown , and then , the breakdown criterion of rf ion source is deduced , and the relation between breakdown voltage and pressure is analyzed too
  通过比较击穿前高频电场的轴向和幅向分量，得出了轴向电场在高频离子源击穿中起主要作用的结论，并进而推导出了高频离子源的击穿判据，得出了气体击穿时离子源击穿电压和放电管内气压的关系。
• In this thesis , we research the characters on the ion beam sputtering system , and prepare tiny films and cnx / tiny multilayers by ion beam sputtering . the best parameters of preparing cnx films are explored . we use the tiny films as template to promote the growth of cnx films
  本文对离子源的溅射特性进行了研究，采用离子束溅射法制备了tin _ y单层薄膜和cn _ x tin _ y多层薄膜，探索该法制备cn _ x薄膜的最佳工艺参数，并利用tin _ y薄膜为衬底以促进cn _ x薄膜的生长。
• The theory of ion - beam etching and ion sources are reviewed . the classification of ion - beam etching are introduced . according to the mechanism that ion sputtering leads to faceting , trenching , reflection and redeposition , some relative solutions are put forward
  综合叙述了离子束刻蚀技术和离子源的工作原理,简单介绍了离子束刻蚀的分类,阐述了离子束刻蚀的物理溅射效应导致的刻面,开槽,再沉积等现象的产生机理及解决办法,分析了kaufman离子源进行ribe的可行性及出现的问题。