离子能量的英文

• ion energy

• "离子"英文翻译    ion
• "能量"英文翻译    energy; amount of energy
• "离子能量发散" 英文翻译 :    ion energy spread
• "离子能量平衡" 英文翻译 :    ion energy balance
• "散射离子能量" 英文翻译 :    scattering ion energy ratio
• "离子能量损耗率" 英文翻译 :    ion energy loss rate
• "离子能量选择器" 英文翻译 :    ion energy selector
• "离子能" 英文翻译 :    ionic energy
• "带电子能量" 英文翻译 :    conduction band electron energy
• "单粒子能量" 英文翻译 :    single particle energy
• "电子能量" 英文翻译 :    electron energy; electronic energy
• "光电子能量" 英文翻译 :    energy of photoelectron
• "光子能量" 英文翻译 :    photo energy; photon energy
• "量子能量" 英文翻译 :    energy of a quantum; quantum energy
• "量子能量表" 英文翻译 :    quantum energy table
• "偶极子能量" 英文翻译 :    dipole energy
• "原子能量" 英文翻译 :    atomic energy; nuclear energy
• "载流子能量" 英文翻译 :    carrier energy
• "中子能量" 英文翻译 :    neutron energy; neutronenergy
• "准粒子能量" 英文翻译 :    quasi-particle energy
• "等离子能" 英文翻译 :    plasma energy
• "初始中子能量" 英文翻译 :    initial energy of neutrons
• "电子能量分布" 英文翻译 :    electron energy distribution
• "电子能量曲线" 英文翻译 :    electronic energy curve
• "发射电子能量" 英文翻译 :    emitted electron energy

• The energy revision of hydrogen - like ion
  对类氢离子能量的修正
• Scattering ion energy
  散射离子能量
• During the study on the mutation effects of ion beam on arabidopsis seeds , it was found that the sensitivity degree of different ecotype seeds was different . plant survival rate could be affected by different ions " energy and ions " type
  在对离子注入拟南芥种子引起的诱变效应的研究过程中发现，不同生态型拟南芥种子对注入剂量的敏感度不同，离子能量、离子类型对种子成苗率也有影响。
• In order to improve the resolution power , the energy method need increase ion total energy , while , the choice of the right gas pressure , the right flight length and increase total energy are effective to improvement of resolution for gf - tof method
  增加对同量异位素的分辨能力，对e - e探测方法就要增加离子能量，而gf - tof方法除了增加离子能量外，合理的选择飞行路径的长度也能提高分辨能力。
• In the hipib film deposition , high purity graphite was employed as target . relations between process parameters and the microstructure , as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate , which affects the intensity and ion energy of hipib ablated plasma , and the temperature of substrate in the film deposition processes . the mechanism of film deposition by hipib ablated plasma was explored also
  在薄膜沉积方面，利用高纯石墨作靶材，调整薄膜沉积过程中的靶基距(烧蚀等离子体密度、离子能量)和基片温度，研究实验工艺对hipib烧蚀等离子体方法制备的dlc薄膜的微观结构和宏观物理性能的影响，探讨了hipib烧蚀等离子体沉积dlc薄膜的成膜机理。
• In the section of fabricating technology , i first discuss the ion beam technology . through the analysis of the effects of each parameter on the surface smoothness , profile fidelity and linewidth resolution in the process of ion etching , the suitable angle of incident ion beam , ion energy , density of ion beam and time of etching are selected combining the actual status of the mask
  在制作工艺的研究方面，首先研究了离子束刻蚀技术，通过对离子束刻蚀过程中各个参数对刻蚀元件的表面光洁度、轮廓保真度和线宽分辨的影响分析，结合掩膜的实际情况选择出了合适的离子束入射角、离子能量、束流密度和刻蚀时间等参数。
• Ii ) energies of the sputtered atoms vary mainly from several to several teens ev , with few atoms " energy relatively high ; the emitting positions of the sputtered atoms are close to the corresponding incident ions ( in the order of angstrom ) ; the sputtered atoms are emitted mainly normally , and few are slantways ; energy and angular distributions of sputtered atoms are influenced by the energies and incident directions of incident ions , but the angular distributions are not influenced by the incident energy very greatly
  Ii )溅射原子的能量一般集中在几个到十几个电子伏特的范围内，在高能量区域也有所分布，但数量很少;溅射原子的出射位置就在离子入射位置的附近(埃数量级) ;溅射原子的角度在垂直方向和斜射方向都有所分布，但以垂直出射为主;溅射原子的能量、角度分布受到了入射离子能量、角度的影响，但入射离子能量对溅射原子的出射角影响不大。
• Second , monte - carlo method is used to simulate the transports of ions penetrating through the rf sheath in terms of the above sheath dynamic model . here , both elastic collisions and charge - exchange collisions between ions and neutral particles are considered . the effects of collisions on the distributions of ions energy and angle incident on the substrate were calculated
  其次，利用已建立的碰撞等离子体鞘层模型和monte - carlo方法模拟了离子在射频鞘层电场中的运动过程，不仅考虑了离子同中性粒子的电荷交换碰撞，还考虑了它们之间的弹性碰撞过程，研究了碰撞效应对入射到基板上的离子能量分布和角度分布的影响。
• The experimental results show that the n contents in the multilayers are higher at the lower incidence ion energy and current . the n contents increase with the increasing of the substrate temperature . the n contents in the films also arose by using the assisted ion beam
  实验结果表明：入射离子能量较低、束流较低时，制得薄膜的n含量较高；升高温度能增加薄膜中的n含量；辅助离子束的使用同样增加了薄膜中的n含量；获得的cn _ x tin _ y薄膜的最高含n量为49 . 52at 。
• The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed . etching characteristics of materials , including pr , cr , quartz , are investigated . the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy , ion beam density and ion incidence angle in pure ar and chf3 , respectively . the etch rate has shown a square root dependence on variation versus
  深入研究了光刻胶、铬薄膜、石英等光学材料离子束刻蚀特性,分别以ar气和chf3为工作气体,研究光刻胶、铬薄膜、石英等的刻蚀速率随离子能量,束流密度和离子入射角度的变化关系,得到刻蚀速率与影响因素的拟合方程,为掩模的制作工艺路线提供了实验依据和理论指导。