能带间隙的英文

• band gap

• "能"英文翻译    ability; capability; skill
• "带"英文翻译    belt; girdle; ribbon; band; ...
• "间隙"英文翻译    interval; gap; freedom; spac ...
• "带间隙" 英文翻译 :    band gap
• "能带间距" 英文翻译 :    band separation
• "带间隙接头" 英文翻译 :    open joint
• "频带间隙" 英文翻译 :    bandgap
• "小带间隙" 英文翻译 :    bullular canals; canal of petit; petit's canal; ruffed canal; spatium zonulare; zonula space; zonular spaces
• "波替管,小带间隙" 英文翻译 :    canal of petit; canals of petit
• "磁带间隙宽度" 英文翻译 :    magnetic tape gap width
• "悬器隙, 小带间隙" 英文翻译 :    spatia zonularia; zonular soaces
• "悬器隙,小带间隙" 英文翻译 :    spatium zonularia
• "珀蒂管,小带间隙" 英文翻译 :    petit canal
• "波替管,悬韧带间隙,小带" 英文翻译 :    spatia zonularis
• "小带间隙,晶状体周间隙" 英文翻译 :    circum-lental spaces
• "带间" 英文翻译 :    interband
• "能带" 英文翻译 :    band theory; bloch band; electronic band structure; energy band; energyband
• "带间的" 英文翻译 :    interbanding; interzonal
• "带间区" 英文翻译 :    interband region
• "间隙" 英文翻译 :    (空隙) interval; gap; freedom; space; [机械工程] clearance; separation; stricture; clear; interspace; allowance; play; backlash; bottom clearance; cross gap; free distance; gapping place; spatium; yawn; [物理学] interstice 齿轮间隙 gear clearance; 利用工作间隙学习 study in the intervals of one's work; 两场战争的间隙 an interval between two wars; 在行与行之间要留出间隙, 以便作必要的修改。 please leave a space between the lines for the necessary corrections
• "次能带" 英文翻译 :    subband
• "低能带" 英文翻译 :    log-energy zone; low-energy zone
• "高能带" 英文翻译 :    high-energy zone
• "能带论" 英文翻译 :    band theory; electronic band structure
• "能带图" 英文翻译 :    energy band diagram

• The subst - itutional oxygen vacancies and tin contributing to its high conductivity . the high optical transmittance of ito films is a direct consequence of it being a wide band gap ( eg > 3ev )
  Ito结构中的氧空位和锡掺杂使得它具有很强的导电性，较大的能带间隙宽度( e _ g 3ev )使得它具有很强的光透明性。
• When sulphurisation time is 30 minutes and sulphurisation temperature change from 180 to 240 , the atomic ratio s / sn of the films increases from 0 . 72 to 1 . 08 and energy gap of the films increases from 1 . 44ev to 1 . 48ev with the increasing of the sulphurisation temperature
  当硫化时间为30分钟硫化温度在240 ~ 310之间变化时,薄膜的s / sn值随着硫化温度的升高从1 . 08上升到1 . 96 ,能带间隙随着硫化温度的升高从1 . 01ev上升到1 . 72ev 。
• Basing on the studying on the optical properties of the porous silicon by photoluminescence technology , this paper discusses the energy band of the porous silicon which is related to the microstructure of the porous silicon , puts forward the main luminescence , calculates the band gap of the porous silicon by the empirical pseudopotental method in the end
  摘要在光致发光技术对多孔硅光学性质研究的基础上讨论了与多孔硅的微观结构有关的多孔硅的能带结构，用能量赝势法模拟计算出多孔硅的能带间隙。