自对准工艺的英文

• self-registered technology

• "自"英文翻译    self; oneself; one's own
• "对准"英文翻译    aim at; be directed at; trai ...
• "工艺"英文翻译    technology; craft; industria ...
• "多晶硅自对准工艺" 英文翻译 :    polysilicon self aligned process; psa
• "硅栅自对准工艺" 英文翻译 :    silicon gate self-aligned technology
• "金属自对准工艺" 英文翻译 :    metal self aligned process
• "自对准栅工艺" 英文翻译 :    srg process
• "自对准多晶硅工艺" 英文翻译 :    self aligned polysilicon process
• "自对准光刻工艺" 英文翻译 :    self aligned photoresist process
• "自对准" 英文翻译 :    autoregistration; self alignment
• "自对准厚氧化膜工艺" 英文翻译 :    sato process
• "自对准，自定位" 英文翻译 :    self-alignment
• "自对准的" 英文翻译 :    self aligned
• "自对准电极" 英文翻译 :    self aligned electrode
• "自对准法" 英文翻译 :    self aligned approach
• "自对准接触" 英文翻译 :    self aligned contact
• "自对准栅" 英文翻译 :    sag; self aligned gate; self registered gate
• "改进型自对准多晶硅栅工艺" 英文翻译 :    advanced polysilicon self aligned process; apsa
• "自对准水平仪" 英文翻译 :    self-aligning level
• "自对准栅金属" 英文翻译 :    sagmos
• "自对准注入器" 英文翻译 :    self aligned injector
• "对准工件位置" 英文翻译 :    location of work piece
• "前轴对准工具" 英文翻译 :    front axle aligning tool
• "基准工艺" 英文翻译 :    basic process
• "自对准电荷耦合掐" 英文翻译 :    self aligned ccd

• It is believed that p - si tft will be the main type in the future panel display . among the process of manufacture p - si tft , the source and drain will have the superposition with grid for the reason of machine ’ s alignment error . the superposition will bring superposition capacitance and it will badly cut down the electric performance
  在制备多晶硅tft时,由于机器的套准误差会在栅极与源、漏极之间产生重叠部分,这样就造成了栅源、栅漏之间的交叠电容,交叠电容的存在严重影响了多晶硅tft的性能,而利用自对准工艺制备的多晶硅tft则避免了交叠电容的产生。
• Finally the method of preparation of p - si tft and some useful dates were given . the dissertation includes seven chapters . the first chapter introduces the development of tft ; the second chapter introduces the principle of tft and its structure ; the third chapter provides the reason of superposition capacitance between s , d and gate ; the fourth chapter introduce the deposition and test method of sinx ; the fifth chapter introduces the fabrication of p - si ; the sixth chapter studies the fabrication techniques of p - si tft and some parameters ; the seventh chapter is a conclusion of the research
  本文一共分为七章:第一章介绍了本论文的研究背景、研究意义、主要工作以及国内外的研究进展;第二章介绍了tft的结构和工作原理;第三章介绍了栅极与源、漏极之间叠加电容产生的原因和自对准工艺;第四章介绍了氮化硅的制备方法和测试方法;第五章介绍了多晶硅tft有源层的制备方法并对各种晶化机理做了介绍;第六章主要对利用自对准工艺制备tft的工艺进行研究,并对制备出来的样品进行了测试;第七章对全文进行总结。