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薄膜电极的英文

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"薄膜电极"怎么读用"薄膜电极"造句

英文翻译手机手机版

  • membrane electrode
  • thin-covered electrode

例句与用法

  • The ff was 0 . 393 and the n was 0 . 3 %
    选填充因子最大的tio _ 2薄膜电极组装了太阳能电池。
  • A study of indium doped tin oxide as electrode of ferroelectric films
    用作铁电薄膜电极的研究
  • Fabrication and capacitive adsorption performance of carbon nanotube film electrodes
    碳纳米管薄膜电极的制备及电容吸附性能
  • The result showed that fill factor of bicomponent films electrode was higher than fill factor of titania electrode
    另外,提出了复合薄膜电极的设想,制备了tioz wo3多孔复合薄膜电极,其填充因子高于to 。薄膜电极。
  • The transmittances of electrochromic thin film electrodes are related to the electrochemical and optical properties of each coated electrochromic ( ec ) layer
    电致色变薄膜电极的穿透率与镀层之电化学及光学性质有关。
  • Limn2o4 films made under these conditions showed good performances , so synthesizing limn2o4 film at low sintering temperatures was realized
    最后对真空烧结进行初步探讨,在较低的烧结温度下制备出了电性能较好的limn204薄膜,实现了低温合成limn2o4薄膜电极
  • And it is important and valuable for application to systematically study the preparation of lsco thin film electrodes and the integration of ferroelectric thin films on the lsco electrodes
    因此, lsco薄膜电极的制备和相应的铁电薄膜集成化研究具有重要的应用价值。
  • Preparation of film electrode is the base of micro battery and grotesque battery . limn2o4 got great attention for the reason of safety , low heat treatment temperature and low cost
    薄膜电极的制备是微型电池和异型电池制备的基础, limn2o4由于其安全性、热处理温度低、成本低等特性引起人们极大的关注。
  • It showed that better crystal films could formed when sintered between 350 ~ 550 for 3 hours . with the increasing of temperature and the extending of time , the diffraction apices became stronger and the crystal became bigger
    薄膜电极的烧结工艺研究结果表明,当烧结温度在350 ~ 550烧结时间为3h时得到结晶良好的limn2o4薄膜,随着温度的升高,衍射峰越来越明显,晶粒越来越大。
  • One of the most key technologies of preparing cd1 - xznxte detector is to make ohmic contact film electrode on cd1 - xznxte crystal ' s surface , and the main technology usually used is evaporation , but the cohesion of evaporated film is n ' t very firm
    制备cdznte探测器最关键的技术之一就是在cdznte表面制备出欧姆接触薄膜电极。关于在cd _ ( 1 - x ) zn _ xte晶体表面制备接触电极用导电薄膜,大都是采用蒸发镀膜技术,膜层与cdznte晶体结合不很牢固。
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