补偿元件的英文

• compensating element
• shim element
• shim member

• "补偿"英文翻译    compensate; make up; make up ...
• "元件"英文翻译    element; component; part; ce ...
• "补偿元件失效" 英文翻译 :    compensating component failure
• "温度补偿元件" 英文翻译 :    temperature compensating element
• "元件补偿失效" 英文翻译 :    component-compensating failure
• "非理想元件的补偿" 英文翻译 :    compensation for nonideal elements
• "温度补偿基准元件" 英文翻译 :    temperature compensated reference element
• "自动定时元件补偿器" 英文翻译 :    automatic time element compe ator; automatic time element compensator
• "元件" 英文翻译 :    [电工] element; component; part; cell; organ 传输元件 transfer element; 电光元件 electrooptic cell; 电路元件 circuit component; 敏感元件 sensor
• "补偿" 英文翻译 :    compensate; make up; make up for; make it up to sb.; make sth. good; compensation; offset 提供补偿 afford redress; 伤残补偿 disability compensation; 合理的补偿 fair compensation; 补偿某人损失 indemnify sb. for his loss; compensate sb. for a loss; 补偿差额 make up a deficiency; 失去健康是无法补偿的。 nothing can compensate for the loss of one's health. 你必须补偿我的这个损失。 you must compensate me for this loss. 他们努力工作, 补偿了失去的时间。 by hard work they made up the loss of time
• "补偿；补偿金" 英文翻译 :    compensation
• "is样元件" 英文翻译 :    is like element
• "ty元件" 英文翻译 :    ty element
• "靶元件" 英文翻译 :    target element
• "磁元件" 英文翻译 :    magnetic cell; magnetic element
• "次元件" 英文翻译 :    subelement
• "灯元件" 英文翻译 :    modulation element
• "第元件" 英文翻译 :    regulating element
• "电元件" 英文翻译 :    electrical element
• "多元件" 英文翻译 :    majority organ
• "非元件" 英文翻译 :    negator
• "风琴，元件" 英文翻译 :    organ
• "负元件" 英文翻译 :    negator
• "光元件" 英文翻译 :    optical element
• "或元件" 英文翻译 :    inclusive-or element; logical or component; or element

• Phase compensation of talbot cavity
  外腔锁相相位补偿元件的理论计算
• The equipment uses vacuum circuit breaker as executing components and use parallel capacitor banks as compensating components . it can check in or out capacitor banks cyclically
  该装置以真空断路器作为执行元件、以并联电容器作为补偿元件，实现“循环投切” 。
• The dominance and properties of the cmos integrated reference were also described , and the research meaning was pointed out . related device theory and process model used in design were described . the temperature related model and the influencing factor of two active devices , subthreshold mosfet and pnp substrate transistor , based on cmos process were analyzed and compared , and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference
  阐述了设计中相关的器件理论与工艺模型,对cmos工艺下的两种有源器件,即亚阈值工作状态下的金属场效应晶体管( mosfet )及衬底pnp双极型晶体管( bjt )的温度模型及其影响因素进行了分析和比较,指明衬底pnp双极型晶体管更适合作为基准源的温度补偿元件。