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载流子注入的英文

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"载流子注入"怎么读用"载流子注入"造句

英文翻译手机手机版

  • carrier injection

例句与用法

  • The work on the simulation of filter , which was applied to the oled to improve the characteristic of chromatics of emission , was introduced
    有机发光器件的载流子注入、传输、复合过程与器件本身的材料、结构、工作电压密切相关。
  • The separated phase of blends and carrier injection , transport and decay were firstly investigated by monitoring two different transient el peaks
    首次引入监测基质和杂质两个瞬态电致峰值来研究低掺杂体系的相分离及载流子注入、迁移和湮灭过程。
  • Secondly , we demonstrated the possibility of improving electron and hole injection and balance to poly ( phenelene vinylene ) derivatives by replacing oxadiazole segments
    利用空穴传输特性ppv链段上添加电子传输型基团的方法改善了两种载流子注入和传输的平衡。
  • Applying dh can enhance the injection ratio , strengthen the confinement to the carrier and enhanced the efficiency of the recombination . this make the brightness greatly enhance
    Dh结构不仅提高了载流子注入比并且加强了载流子限制作用,提高了辐射复合的效率,使得hb - led的亮度大幅度提高。
  • So , both 1 / f noise power spectrum measurement and similarity coefficient extracted from its time series can offer economical , effective and indestructible tool to detect the latent damage induced by esd and hci for mosfets
    因此,无论是1 / f噪声功率谱的测试还是由其时间序列提取得到的相似系数均可以作为经济、有效、完全非破坏性的工具,替代传统的电特性用于检测静电引起的mos器件潜在损伤以及热载流子注入损伤。
  • Since polymer light - emitting diodes ( pleds ) were invented , much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application . we investigated several factors influencing the brightness , efficiency and spectrum characteristics of pleds el , especially focused our attention on the processes of carrier injection , transport , recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds
    本文以提高聚合物器件的效率和亮度为目标,提出了提高及b几种方案,研究了材料性质,器件结构,它们的稳态及瞬态特性及发光机理,特别关注了以兼具电子空穴传输能力的分子及掺杂聚合物作成的单双层掺杂聚合物发光器件中的载流子注入、迁移、复合及湮灭等。
  • The emphasis is about the metal line reliability , contact reliability , gate oxide integrity , and hot carrier injection in test . based on the test datum , the reliability of 1 . 0 m process on single failure mechanisms is evaluated , and all the test structures are explained
    测试内容上着重介绍了金属化完整性测试、氧化层完整性测试、连接完整性测试和热载流子注入测试,根据测试数据,对1 . 0 m工艺线单一失效机理的可靠性进行了评价,对不同测试结构的作用进行了说明。
  • Account for the high electrical field induced from the high applied voltage relative to small dimension device , the mechanism of hot - carrier generation is analysed , the si - h bond broken model for hot - carrier injection and interface states generation is deduced and the substrate current model is developed
    基于mosfet偏压不能按比例缩小所导致的高电场,对mosfet的热载流子产生机理进行了分析,导出了热载流子注入所引起的界面态的si - h健断裂模型,并建立了表征器件热载流子效应的衬底电流模型。
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