霍耳系数的英文

英文翻译手机版

Test method for resistivity and hall coefficient in insb single crystals
锑化铟单晶电阻率及霍耳系数的测试方法
Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor
而霍耳系数取决于半导体材料中电子浓度和空穴浓度的相对大小及其迁移率之比。
In the hall effect , hall electromotive force is not only related to the current density , magnetic field and the distance of the poles , but also to hall coefficient directly
据知,霍耳效应中输出的霍耳电动势除了跟输入的电流强度、磁场强度及输出电极的间距有关外,还与霍耳系数成正比。
Semiconductor materials was laid on the base , and the corresponding electrode was lead to . the semiconductor material has selective adsorption to the gas that changes the electronic concentration which also raises hall coefficient , corresponding changes the export of hall electromotive force , so the gas sensors which is based on hall effect was made
当我们把半导体材料涂敷到基片上,并引出相应的电极,由于气敏材料对个别气体有选择的吸附特性从而改变了材料中的电子浓度,也就引起了霍耳系数的相应变化,输出的霍耳电动势也跟着变化,就制成了基于霍耳效应的气敏传感器。