buffer layer中文是什么意思

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中文翻译
造句

缓冲层

buffer n. 1.〔英俚〕无能的人，老派人物。 2.家伙，人。 ...
layer n. 1.放置者，铺设者，计划者。 2.【赛马】(一般) ...
buffer n. 1.【机械工程】缓冲器，缓冲垫；阻尼器，减震器；消声器。 2.【化学】缓冲，缓冲剂。 3.缓冲者；缓冲物；缓冲国(＝ buffer state〕。 4.〔计算机〕缓冲存储装置。 oil buffer【机械工程】油压减震器。 vt. 1.【化学】用缓冲剂处理。 2.缓和；缓冲；保护；使不利影响减少。 buffer economy by raising interest rates 以提高利率来保护经济。 The drug buffer-ed his pain. 这剂药减轻了他的病痛。 buffer2 n. 1.【机械工程】抛(光)盘，抛光轮，抛光棒。 2.抛光工人。 n. 1.〔英俚〕无能的人，老派人物。 2.家伙，人。 3.【航海】水手[掌帆]长副手。 He was a bit of buffer. 他有点低能。 an old buffer 老家伙，老糊涂，老朽。
layer n. 1.放置者，铺设者，计划者。 2.【赛马】(一般)赌客。 3.产卵的鸡。 4.【军事】瞄准手。 5.层；阶层；地层；涂层。 6.【植物；植物学】压条，倒伏庄稼。 7.敷设轨。 8.垫片，层板，夹层，膜。 a brick layer 砌砖者。 a mine layer 布雷舰艇。 a bad [good] layer 生蛋少[多]的鸡。 a layer of rock 一层岩石。 boundary layer 边层。 carburized layer 渗炭层。 turberlent layer 紊流附面层。 layers and backers (赛马等的)赌客。 vt. 1.分层砌。 2.用压条法繁殖。 vi. 庄稼倒伏。 n. -ing 分层套穿式时装。
layer by layer逐层
layer in layer层内层
hydraulic buffer oil buffer 耗能型缓冲器
layer-for-layer 叠层绕组
account buffer 帐目缓冲器
accumulator and buffer 累加器和缓冲器
acidic buffer 酸性缓冲液
address buffer 地址缓冲器
air buffer 空气缓冲器
airbag buffer 水胎磨毛机
alkaline buffer 碱性缓冲液
allocation buffer 分配缓冲区
ammonia buffer 氨缓冲溶液
analog buffer 模拟缓冲器
application buffer 应用缓冲器; 应用缓冲区
archive buffer 文件缓冲器
are parts=buffer 备件; 备品
area buffer 面缓冲区
areparts=buffer 备件
armature buffer 衔铁缓冲杆
assembly buffer 汇编缓冲器

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例句与用法

( 2 ) the ysz and sto buffer layers were prepared by sol - gel process on si substrates . the ysz and sto films could be used as the buffer layers between si substrate and ybco films
( 2 )用sol - gel法在si基板上制的钇稳定氧化锆( ysz )和钛酸锶( sto )薄膜作为si与ybco间的缓冲层是可行的。
The layers from substrate to top of the deposited film are ti substrate , buffer layer ( interface between substrate and film ) , porous layer and lamellar layer
研究发现，从钛合金到羟基磷灰石共有四层结构：钛合金基体、钛合金的氧化层、多孔的纳米晶羟基磷灰石和花瓣状的结晶良好的羟基磷灰石。
By means of quantitative analysis , we accessed growth rate and film thickness of gan epilayer , and even determined in real time the thickness of buffer layer from in situ measurements of normal incidence reflectance
通过对在位监测曲线的分析，确定gan生长速率以及外延层的厚度，并利用监测曲线实时标定缓冲层的厚度。
This model described relationship of current collapse and traps in buffer layer , and the normalized product of electron mobility and 2deg density with and without current collapses was 0 . 95 vgs
该模型描述了电流崩塌效应与缓冲层中陷阱的相互关系,并获得了电流崩塌前后迁移率与二维电子气浓度乘积的归一化值0 . 95 vgs 。
In order to deal with large mismatch ( 14 . 6 % at room temperature ) between gaas and insb , a insb buffer layer was deposited firstly at low temperature 350 , followed by a insb epilayer being deposited at higher temperature 440
为了克服insb与gaas间14 . 6 %的晶格失配度,实验设计先低温生长一定厚度的insb缓冲层,随后升温生长insb外延层。
It was thought that zno buffer layer eliminates the imbalance of interface charge and weaken the thermal stress , so that the dislocation between wide band - gap ii - vi materials and si substrate would be decreased
认为由于zno的存在消除了电荷不匹配以及减少热应力对在si衬底上生长宽带-族半导体材料带来的影响从而减少界面间的缺陷的产生。
2 、 in order to solve the phenomenon of the outdiffusion of the base dopant , two solutions are suggested : 1 ) the sige : c base can effectively solve the outdiffusion problem ; 2 ) the undoped buffer layer can constrict the outdiffusion phenomenon
2 、为了解决基区杂质外扩现象,提出了两种方案: 1 )采用掺碳的sige : c基区层,能够有效消除外扩问题; 2 )采用未掺杂的缓冲层i - sige ,能够有效抑制外扩现象。
In this thesis , the cvd technique and “ two - step growth process ” were used to deposit the 3c - sic films , that was to carbonize si substrate in carbide gas atmosphere first in order to form a buffer layer , then deposited the 3c - sic films on this buffer layer
本论文采用cvd方法,并结合“两步生长工艺”进行3c - sic的异质外延生长。即:首先将si基片碳化,形成一个碳化缓冲层,然后再在此缓冲层上异质外延生长3c - sic薄膜。
In order to increase the thickness and improve the quality of sputtered films , low deposition rate and 30nm ta buffer layer on substrate have been adopted . as a result , 3 u m single films and 2 . 6 u m / 2 . 6 u m 72 . 6 u m sandwiched films have been successfully prepared
通过降低溅射速率和在基底上沉积30nm的tabuffer (缓冲层) ，解决了难以溅射生长厚膜的问题，成功制备了厚度3 m的单层膜和每层厚度2 . 6 m的三明治膜。
Zno thin film had a better crystallization with increase the substrate temperature . the buffer layer thickness effected crystalline quality and morphology of zno thin film . the results showed that the film had the best crystalline qulity and morphology when the buffer later thickness was 36nm
缓冲层的厚度对薄膜的结晶质量和表面形貌有很大的影响,研究发现,缓冲层厚度36nm时, zno薄膜有最优的取向和最平滑的表面。