buffer layer中文是什么意思

• 缓冲层

• buffer    n. 1.〔英俚〕无能的人，老派人物。 2.家伙，人。 ...
• layer    n. 1.放置者，铺设者，计划者。 2.【赛马】(一般) ...
• buffer    n. 1.【机械工程】缓冲器，缓冲垫；阻尼器，减震器；消声器。 2.【化学】缓冲，缓冲剂。 3.缓冲者；缓冲物；缓冲国(＝ buffer state〕。 4.〔计算机〕缓冲存储装置。 oil buffer【机械工程】油压减震器。 vt. 1.【化学】用缓冲剂处理。 2.缓和；缓冲；保护；使不利影响减少。 buffer economy by raising interest rates 以提高利率来保护经济。 The drug buffer-ed his pain. 这剂药减轻了他的病痛。 buffer2 n. 1.【机械工程】抛(光)盘，抛光轮，抛光棒。 2.抛光工人。 n. 1.〔英俚〕无能的人，老派人物。 2.家伙，人。 3.【航海】水手[掌帆]长副手。 He was a bit of buffer. 他有点低能。 an old buffer 老家伙，老糊涂，老朽。
• layer    n. 1.放置者，铺设者，计划者。 2.【赛马】(一般)赌客。 3.产卵的鸡。 4.【军事】瞄准手。 5.层；阶层；地层；涂层。 6.【植物；植物学】压条，倒伏庄稼。 7.敷设轨。 8.垫片，层板，夹层，膜。 a brick layer 砌砖者。 a mine layer 布雷舰艇。 a bad [good] layer 生蛋少[多]的鸡。 a layer of rock 一层岩石。 boundary layer 边层。 carburized layer 渗炭层。 turberlent layer 紊流附面层。 layers and backers (赛马等的)赌客。 vt. 1.分层砌。 2.用压条法繁殖。 vi. 庄稼倒伏。 n. -ing 分层套穿式时装。
• layer by    layer逐层
• layer in    layer层内层
• hydraulic buffer oil buffer    耗能型缓冲器
• layer-for-layer    叠层绕组
• account buffer    帐目缓冲器
• accumulator and buffer    累加器和缓冲器
• acidic buffer    酸性缓冲液
• address buffer    地址缓冲器
• air buffer    空气缓冲器
• airbag buffer    水胎磨毛机
• alkaline buffer    碱性缓冲液
• allocation buffer    分配缓冲区
• ammonia buffer    氨缓冲溶液
• analog buffer    模拟缓冲器
• application buffer    应用缓冲器; 应用缓冲区
• archive buffer    文件缓冲器
• are parts=buffer    备件; 备品
• area buffer    面缓冲区
• areparts=buffer    备件
• armature buffer    衔铁缓冲杆
• assembly buffer    汇编缓冲器

• Aln is an important compound semiconductor material with wide band - gap , which has wurtzite structure too . because of their many excellent physical properties , aln thin films were applied in blue - uv emitting materials , epitaxy buffer layer , soi material and saw device with ghz band
  Aln具有许多优异的物理性能，在蓝光、紫外发光材料及热释电材料、外延过渡层、 soi材料的绝缘埋层和ghz级声表面波器件等方面有着重要的应用。
• It was found that the buffer layers can effectively hinder the diffusion of elements across the interface and release the thermal stress caused by thermal coefficients mismatch . the thermal stability of graded materials , therefore , has been significantly improved
  这一缓冲层有效地阻碍了过渡层和半导体基体之间的元素扩散，并缓解了由于两种半导体材料之间热膨胀系数差异而产生的热应力，显著提高了叠层bi _ 2te _ 3 / fesi _ 2材料的热稳定性。
• Otherwise , using the ta buffer layer can effectively reduce the surface roughness . in addition , measured by our measurement system , the polycrystalline the film has similar negative magnetoresistance effect to single - crystalline film , so it is potential to be applied in spintronic devices
  通过磁电子输运测试系统研究制备的薄膜还发现多晶fe _ 3o _ 4具有同单晶fe _ 3o _ 4类似的负磁电阻特性,因此有望将多晶fe _ 3o _ 4薄膜应用到自旋电子器件中。
• For the preparation of coated conductors , one of the most important issues is the growth of seed layer ( the first buffer layer ) , which provide a continuous , smooth , and chemically inert surface for the growth of the ybco film while transferring the biaxial texture from the substrate to the htsc layer
  在二代涂层导体中,第一层过渡层(也称为种子层)起着顺延织构和阻挡基带与超导层之间互扩散的重要作用,因此,种子层是涂层导体制备的关键。
• The techniques of preparing film buffer layers on si were studied . the sem , tem and xrd were adopted to study the crystal structure of films . the influences of buffer layers , substrate and heat treatment condition on the crystal structure and performance of the ybco films were discussed
  进一步用扫描电镜、透射电镜和x射线衍射仪研究了薄膜组织结构和结晶情况，分析了缓冲层和衬底对ybco薄膜制备的影响、以及不同热处理条件对薄膜结晶结构及性能的影响。
• Besides the realization of moving function , the wriggling typed flexible mobile mechanism could also set up a flexible safety buffer layer between robot and intestinal tract by means of an air - in inflatable rubber bag , in order to avoid creating injury of scratch and stretch upon soft tissues inside human body
  蠕动式柔性移动机构除了实现移动功能外，还可通过充气膨胀的像胶囊在机器人与肠道之间建立一个柔软的安全缓冲层，以避免在机器人运动过程中对人体内部软组织造成的擦伤和拉伤。
• In the new structure , a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process . . the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin
  新结构用三重扩散的方法在n ~ -单晶片上引入了n ~ +缓冲层，仍然保留了npt - igbt中薄而轻掺杂p层和高载流子寿命的本质优点，同时又具有pt - igbt中n ~ - ( n ~ + )双层复合的薄耐压层(即薄基区)的优点。
• By the essential control of the initial stage of - material growth , the high - quality crystal films can be obtained . by using mocvd technology , studies of some kinds of methods such as hydrogen - terminated , nitridation , plasma - assisted , growth of two stages and sputtering buffer layers have been conducted . by measuring of xrd , pl , sem and tem , and analysis of spectra of xrd , raman scatting , oa , and pl at different temperatures , we observed that the crystal quality has been improved markedly
  本文利用mocvd技术，采用各种对si衬底处理的方法，如氢终止法、氮化法、等离子体轰击方法、两步生长法、溅射缓冲层法等进行了试验与研究，通过x射线衍射技术( xrd ) 、光致发光技术( pl ) 、扫描电子显微术( sem ) 、透射电子显微术( tem )等检测，并对其x射线衍射光谱、拉谱光谱、吸收光谱及不同温度下的光致发光光谱分析，发现外延晶体的生长质量得到了明显提高。
• The device is a synthetical applicating example of phase modulator , intensity modulator and directional coupler theory . the characters and fabricating process of linbo _ 3 optical waveguide , electrodes design principle , the influence of sio _ 2 dielectric buffer layer on the performance of the device and design principle of tapped power ( ratio ) are analyzed
  该器件是相位调制、强度调制和定向耦合器理论综合应用的典型,文章从理论上分析了linbo _ 3光波导的特点、制作工艺、电极设计原理、 sio _ 2介质缓冲层对器件性能的影响和抽头功率的设计原理等。
• Larger growth pressure of buffer layer led to the dramatic increase of structural and optical quality of gan epilayer , and the improvement in quality was attributed to the transition of growth mode from 3d to quasi 2d , which was revealed by scanning electron microscope
  发现缓冲层的生长压力变化对退火后缓冲层表面的状态影响极大，增大缓冲层生长时的反应室压力可以明显提高外延gan的晶体质量和光学质量。通过sem分析，发现提高缓冲层生长压力时，高温gan生长明显经历了从三维生长到二维生长的过渡，晶体质量明显提高。

• buffer layerとは意味：緩衝層｛かんしょう そう｝