field-effect transistor中文是什么意思

• 场效晶体管
• 场效应管
• 场效应晶体管

• field    n. 1.原野，旷野；(海、空、冰雪等的)茫茫一片。 2 ...
• effect    n. 1.结果。 2.效能，效果，效力，效应，作用，功效 ...
• transistor    n. 【无线电】晶体(三极)管；晶体管[半导体]收音机。 ...
• depletion field effect transistor    耗尽型场效应管
• fet field effect transistor    场效应晶体管
• field effect transistor    【无线电】场效果晶体管。
• field effect transistor (fet)    场效应电晶体; 场效应管; 场效应晶体管
• field effect transistor circuit    场效应晶体管线路
• field effect transistor preamplifier    场效应晶体管前置放大器
• field effect transistor(fet)    场效应管
• field-effect photo transistor    场效应光电晶体管
• field-effect transistor multiplier    场效应管乘法器
• field-effect-transistor resistor    场效晶体管电阻; 场效应晶体管电阻器
• grid field effect transistor    栅场效应晶体管
• junction field effect transistor    面结型场效应晶体管
• junction field-effect transistor    结面型场效应晶体管; 面结型场效应晶体管
• microwave field-effect transistor    微波场效应晶体管
• monolithic field effect transistor    单块场效应晶体管
• mos field effect transistor    mos金属氧化物半导体场效应晶体管; 金属氧化物半导体场效应晶体管
• multichannel field-effect transistor    多通道场效晶体管
• optical field effect transistor    光场效应晶体管
• pentode field-effect transistor    五极场效应晶体管
• photo field effect transistor    光控场效应晶体管
• photosensitive field-effect transistor    光敏场效应晶体管
• silicon field-effect transistor    硅场效应晶体管

• Semiconductor discrete device . detail specification for type cs6760 and cs6762 silicon n - channel enhacement mode field - effect transistor
  半导体分立器件. cs6760和cs6762型硅n沟道增强型场效应晶体管详细规范
• Specification for harmonized system of quality assessment for electronic components - blank detail specification : single gate field - effect transistors
  电子元器件质量评定协调体系规范.空白详细规范.单栅场效应晶体管
• Mosfets discrete semiconductor devices - part 8 - 4 : metal - oxide - semiconductor field - effect transistors mosfets for power switching applications
  半导体分立器件.第8 - 4部分:电力开关装置用金属氧化物半导体场效应晶体管
• Semiconductor discrete device . detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp , gt and gct classes
  半导体分立器件gp gt和gct级cs1型硅n沟道耗尽型场效应晶体管.详细规范
• Semiconductor discrete device . detail specification for silicon n - channel deplition mode field - effect transistor of type cs4 . gp , gt and gct classes
  半导体分立器件gp gt和gct级cs4型硅n沟道耗尽型场效应晶体管.详细规范
• Semiconductor discrete device . detail specification for silicon n - channel deplition mode field - effect transistor of type cs10 . gp , gt and gct classes
  半导体分立器件gp gt和gct级cs10型硅n沟道耗尽型场效应晶体管.详细规范
• Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors , buried zener diodes , and junction field - effect transistors
  现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极管和结场效应晶体管。
• Among them , the control unit of the primary and subordinate cpu structure has very high precision of control , takes the power field - effect transistor as the power device
  )其中，主从cpu结构的控制单元具有很高的控制精度；采用了功率场效应管作为功率器件。
• Semiconductor devices - discret devices . part 8 : field - effect transistors . blank detail specification for single - gate field - effect transistors , up to 5 w and 1 ghz
  半导体器件.分立器件.第8部分:场效应晶体管.第1节: 1ghz 5w以下的单栅极场效应晶体管的空白详细规范
• Semiconductor devices - discrete devices . part 8 : field - effect transistors . section one - blank detail specification for single - gate field - effect transistors up to 5w and 1ghz
  半导体器件分立器件第8部分:场效应晶体管第一篇1ghz 5w以下的单栅场效应晶体管空白详细规范

• field-effect transistorとは意味：電界効果｛でんかい こうか｝トランジスタ◆【略】FET