buffer layer中文是什么意思

• 缓冲层

• buffer    n. 1.〔英俚〕无能的人，老派人物。 2.家伙，人。 ...
• layer    n. 1.放置者，铺设者，计划者。 2.【赛马】(一般) ...
• buffer    n. 1.【机械工程】缓冲器，缓冲垫；阻尼器，减震器；消声器。 2.【化学】缓冲，缓冲剂。 3.缓冲者；缓冲物；缓冲国(＝ buffer state〕。 4.〔计算机〕缓冲存储装置。 oil buffer【机械工程】油压减震器。 vt. 1.【化学】用缓冲剂处理。 2.缓和；缓冲；保护；使不利影响减少。 buffer economy by raising interest rates 以提高利率来保护经济。 The drug buffer-ed his pain. 这剂药减轻了他的病痛。 buffer2 n. 1.【机械工程】抛(光)盘，抛光轮，抛光棒。 2.抛光工人。 n. 1.〔英俚〕无能的人，老派人物。 2.家伙，人。 3.【航海】水手[掌帆]长副手。 He was a bit of buffer. 他有点低能。 an old buffer 老家伙，老糊涂，老朽。
• layer    n. 1.放置者，铺设者，计划者。 2.【赛马】(一般)赌客。 3.产卵的鸡。 4.【军事】瞄准手。 5.层；阶层；地层；涂层。 6.【植物；植物学】压条，倒伏庄稼。 7.敷设轨。 8.垫片，层板，夹层，膜。 a brick layer 砌砖者。 a mine layer 布雷舰艇。 a bad [good] layer 生蛋少[多]的鸡。 a layer of rock 一层岩石。 boundary layer 边层。 carburized layer 渗炭层。 turberlent layer 紊流附面层。 layers and backers (赛马等的)赌客。 vt. 1.分层砌。 2.用压条法繁殖。 vi. 庄稼倒伏。 n. -ing 分层套穿式时装。
• layer by    layer逐层
• layer in    layer层内层
• hydraulic buffer oil buffer    耗能型缓冲器
• layer-for-layer    叠层绕组
• account buffer    帐目缓冲器
• accumulator and buffer    累加器和缓冲器
• acidic buffer    酸性缓冲液
• address buffer    地址缓冲器
• air buffer    空气缓冲器
• airbag buffer    水胎磨毛机
• alkaline buffer    碱性缓冲液
• allocation buffer    分配缓冲区
• ammonia buffer    氨缓冲溶液
• analog buffer    模拟缓冲器
• application buffer    应用缓冲器; 应用缓冲区
• archive buffer    文件缓冲器
• are parts=buffer    备件; 备品
• area buffer    面缓冲区
• areparts=buffer    备件
• armature buffer    衔铁缓冲杆
• assembly buffer    汇编缓冲器

• It has been shown by our calculations that conductor loss is greatly reduced under velocity matching with relatively thick coplanar waveguide electrodes and thick buffer layer , but the characteristic impedance can not match with that of the external circuit at the same time , and the modulation bandwidth is confined in this case
  然后，用一般的椭圆积分计算了普通共面波导型调制器的有效折射率、特征阻抗和导体损耗系数。通过计算发现，采用厚电极和厚缓冲层结构，在实现速度匹配的情况下，可以大大减小导体损耗，但是由于阻抗不能同时满足匹配，调制带宽受到限制。
• Based on prandtl ' s momentum transportation , this paper calculates in detail the physical quantities such as eddy viscosities , and ratio of eddy viscosity to motion viscosity , total stresses with respect to relative position in three regions of viscous sub - layer , buffer layer , and main turbulent stream for non - newtonian fluid flowing turbulently in ducts , which according to karman ' s three layer models and measurement of fluid parameters in evaluation apparatus , discusses the influence of polymer drag reduction on flowing properties of non - newton fluid , analyzes quantitatively principle of turbulent reduction phenomenon and condition of increasing reduction rate
  摘要以普兰德动量传递理论为基础，按照卡门的三层模型，通过室内模拟环道用0号柴油及加入减阻剂在圆管内的流动参数的测定，计算了非牛顿型流体管内湍流边界层的层流内层、过渡层、湍流中心的涡流粘度，涡流粘度与运动粘度比、总应力随相对位置的变化等定量参数，探讨了高分子减阻剂对非牛顿流体流动特性的影响，对湍流减阻现象的机理与增大减阻率的条件进行了定量分析。
• We have studied the influence of growth parameters of buffer layer under large flux of reactant materials and found that parameters such as v / ratio , growth temperature and ammonia flux during annealing have evident influences on the growth of buffer layer , while other parameters like growth pressure , pressure during annealing and ramping rate show little influence
  在大源流量流下，研究了gan缓冲层各生长参数的影响规律，发现对缓冲层生长影响显著的条件有生长比、生长温度、退火时的氨气流量。而缓冲层生长压力、退火压力及退火时间的影响相对较小。
• In this paper , the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process . the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed . the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ) , x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
  本论文提出了在蓝宝石上引入一层缓冲层材料形成复合衬底，采用常压化学气相淀积( apcvd )方法在其上异质外延生长sic薄膜的技术，分析了cvd法生长sic的物理化学过程，通过实验提出sic薄膜生长的工艺条件，并通过x射线衍射( xrd ) 、 x射线光电子能谱( xps ) 、光致发光谱( pl谱)和扫描电镜( sem )对外延薄膜的结构性质进行分析。
• Much attention has been paid on pure or doped zirconia thin films because of their high melting point , low heat conductivity , high ionic conductivity and chemical durability . in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires , zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades
  纯的或掺杂的氧化锆薄膜因其高熔点、低热导率、高离子导电能力和高温化学稳定性而受到相当的重视,而且氧化锆外延薄膜在金属氧化物半导体( mos ) 、高温超导带材等领域的应用受到越来越多的关注。
• The experimental results show that the quality of zno films prepared by electron beam evaporation can be greatly improved by means of two - step annealing of metallic zn films in oxygen ambient , and it is feasible to fabricate high quality mgxzn1 - xo alloy films with mgo buffer layers by using thermal evaporation technique following by two - step annealing process . this method gives a new path to prepare mgxzn1 - xo alloy films
  实验结果表明利用电子束蒸发技术制备的zno薄膜材料，在经过氧气气氛下的二次退火处理后，能够表现出较好的发光和结构特性；以mgo薄膜作为缓冲层制备出了高质量的mgzno合金薄膜材料，这为开展mgzno合金薄膜材料的研究开辟了新的途径。
• The quality of buffer layer and thin films was analyzed by afm , xrd , rheed and xps respectively . the effect of the experimental parameters such as carbonization time , working pressure , c source gas flow rate , carbonization temperature , different carbonization gas and substrate on the carbonization process was studied firstly . it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite , but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too , and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low , but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough , and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature , the size of particles was increased , the rms is decreased and a good single - crystalline carbonization layer could be obtained , but a rough surface was formed at a excessive high temperature ; the rms of
  对于碳化工艺,侧重研究了碳化时间、反应室气压、 c源气体的流量、碳化温度以及不同种类的c源气体、基片取向等因素对碳化层质量的影响,研究结果表明:随着碳化时间的增长,碳化层的晶粒尺寸随之变大,表面粗糙度随之降低,但当碳化到一定时间之后,碳化反应减缓,碳化层的晶粒尺寸以及表面粗糙度的变化幅度变小;碳化层的晶粒尺寸随反应室气压的升高而变大,适中的反应室气压可得到表面比较平整的碳化层;在c源气体的流量相对较小时,碳化层的晶粒尺寸随气体流量的变化不明显,但当气体流量增大到一定程度时,碳化层的晶粒尺寸随气体流量的增大而明显变大,同时,适中的气体流量得到的碳化层表面粗糙度较低;碳化温度较低时,碳化层的晶粒取向不明显,随着碳化温度的升高,碳化层的晶粒尺寸明显变大,且有微弱的单晶取向出现,但取向较差,同时,适中的碳化温度可得到表面平整的碳化层;相比于c _ 2h _ 2 ,以ch _ 4作为c源气体时得到的碳化层表面平整得多;比起si ( 100 ) ,选用si ( 111 )作为基片生长的碳化层的晶粒取向一致性明显更好。
• In experiments carried out under small reactant source flux , it was found that parameters such as v / ratio , growth pressure , thickness of buffer layer , ammonia flux during annealing and ramping rate have strong influence on the growth of buffer layer , while the influence of tmga flux and pressure during annealing can be omitted
  在小反应源气流下，发现对缓冲层生长影响显著的条件包括生长比，生长压力，缓冲层厚度，退火时氨气流量及退火速率。而ga源流量，退火压力及的影响相对较小。
• In the thesis , the relations between the structures and properties , the applications and prospects of zno thin films were reviewed with regard to the fields of piezo - electrical materials , opticai - electrical materials , buffer layers and integrated optical materials . various preparation methods of zno thin films were described
  本论文对氧化锌晶体结构，氧化锌薄膜的压电和光电特性，作为薄膜外延生长缓冲层和集成光学上的应用及前景进行了综述，同时对氧化锌薄膜的制备方法以及溶胶凝胶法制备薄膜的特点进行了介绍。
• The high density dislocations behave like deep - level donors and the dislocations scattering is considerable at low temperature especially . besides , when the insb buffer layer thickness became 80nm , the roughness of insb epilayer increased . the initial stage of insb growth on gaas substrate is
  透射电子显微镜发现,在insb / gaas薄膜的界面处分布有间距为3 . 5nm的失配位错阵列,界面处的高密度位错可体现出类似深能级施主的特性,尤其在低温下对载流子散射更加显著。

• buffer layerとは意味：緩衝層｛かんしょう そう｝