field-effect transistor中文是什么意思

• 场效晶体管
• 场效应管
• 场效应晶体管

• field    n. 1.原野，旷野；(海、空、冰雪等的)茫茫一片。 2 ...
• effect    n. 1.结果。 2.效能，效果，效力，效应，作用，功效 ...
• transistor    n. 【无线电】晶体(三极)管；晶体管[半导体]收音机。 ...
• depletion field effect transistor    耗尽型场效应管
• fet field effect transistor    场效应晶体管
• field effect transistor    【无线电】场效果晶体管。
• field effect transistor (fet)    场效应电晶体; 场效应管; 场效应晶体管
• field effect transistor circuit    场效应晶体管线路
• field effect transistor preamplifier    场效应晶体管前置放大器
• field effect transistor(fet)    场效应管
• field-effect photo transistor    场效应光电晶体管
• field-effect transistor multiplier    场效应管乘法器
• field-effect-transistor resistor    场效晶体管电阻; 场效应晶体管电阻器
• grid field effect transistor    栅场效应晶体管
• junction field effect transistor    面结型场效应晶体管
• junction field-effect transistor    结面型场效应晶体管; 面结型场效应晶体管
• microwave field-effect transistor    微波场效应晶体管
• monolithic field effect transistor    单块场效应晶体管
• mos field effect transistor    mos金属氧化物半导体场效应晶体管; 金属氧化物半导体场效应晶体管
• multichannel field-effect transistor    多通道场效晶体管
• optical field effect transistor    光场效应晶体管
• pentode field-effect transistor    五极场效应晶体管
• photo field effect transistor    光控场效应晶体管
• photosensitive field-effect transistor    光敏场效应晶体管
• silicon field-effect transistor    硅场效应晶体管

• Semiconductor devices - discrete devices - part 8 : field - effect transistors - section 3 : blank detail specification for case - rated field - effect transistors for switching applications
  半导体器件.分立器件和集成电路.第8部分:场效应晶体管.第3节:开关电路用场效应晶体管空白详细规范
• Semicoductor devices ; discrete devices ; part 8 : field - effect transistors ; section 2 : blank detail specification for field - effect transistors for case - rated power amplifier applications
  半导体器件.分立器件.第8部分:场效应晶体管.第2节:外壳限定的功率放大器用场效应晶体管空白详细规范
• Discrete semiconductor devices and integrated circuits - field - effect transistors - additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
  分立半导体器件和集成电路.场效应晶体管.电源转换场效应晶体管测量方法中附加功率特性和amds
• Semiconductor , diodes , bipolar junction transistors , field - effect transistors , transistor amplifiers , frequency response , operational amplifiers , differential and multistage amplifiers , integrated circuits
  半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。
• Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - field - effect transistors for case - rated power amplifier applications
  电子元器件质量评估协调体系规范.半导体分立器件.空白详细规范.用于外壳额定功率放大器应用的场效应晶体管
• Harmonized system of quality assessment for electronic components - semiconductor devices - discrete devices - field - effect transistors - blank detail specification for case - rated field - effect transistors for switching applications
  电子元器件质量评定协调体系.半导体器件.分立器件.场效应晶体管.转换电路用场效应晶体管空白详细规范
• As a new generation of transistors , organic field - effect transistors ( ofet ) have advanced greatly not only in the technology of fabrication but also in the performances of devices and thus attracted particular attention recently
  摘要近几年来，作为新一代半导体晶体管的有机场效应晶体管( ofet )在制备技术和器件性能上都取得了很大的进步，并引起了有机半导体领域研究人员的广泛关注。
• With the pentacene acting as the active layer , the diode of ito / pentacene / al , the vertical organic thin - film field - effect transistor , the organic thin - film ambipolar field - effect transistor and the organic thin - film double - field - effect transistor are fabricated
  提出双栅绝缘层结构全有机薄膜场效应晶体管,达到了减少器件栅的漏电流、降低器件工作电压和提高器件工作电流的目的。
• Specification for harmonized system of quality assessment for electronic components - blank detail specification - semiconductor devices - discrete devices - field - effect transistors - blank detail specification for single - gate field - effect transistors , up to 5 w and 1 ghz
  电子元器件质量评估协调体系.空白详细规范.半导体器件.分立器件.场效应晶体管.功率达5w和1ghz的单栅场效应晶体管空白详细规范
• On the aspect of broadband , the design of the broadband power amplifier is summarized generally . because of the importance of the s - parameter to characterize the device ' s performances and design the power amplifier , the theoretical simulation for the s - parameter is done in terms of the model of field - effect transistors with matlab . a power amplifier has been designed and implemented using pspice , moreover , whose bandwidth is broadened by the negative feedback
  在宽带设计方面，论文就目前宽带射频功放的设计进行了较全面的总结；基于散射参量对表征器件特性和功放设计中的重要性，由场效应管的模型参量对其散射参量用matlab进行了理论模拟；设计了一宽带射频功放，并用仿真软件pspice实现负反馈对放大电路的带宽展宽。

• field-effect transistorとは意味：電界効果｛でんかい こうか｝トランジスタ◆【略】FET