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buffer layer中文是什么意思

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  • In addtion , the growth rate of low temperature insb buffer layer was 0 . 26 m / h , which was obtained by rheed intensity oscillation curves . growth temperature of insb epilayers were investigated with sem and dcxrd , and it was found that the optimum temperature was 440 . a 2 . 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec , the strain relaxtion was about 99 . 02 %
    通过扫描电镜形貌观察与能谱分析发现:温度较低时sb的表面迁移率低,容易在表面堆积;结合x射线双晶衍射分析,确定高温insb外延生长的最佳衬底温度为440 ,该温度下生长2 . 1 m的样品x射线半高峰宽为412 ,应变弛豫99 . 02 % 。
  • In this dissertation , nanometer zno thin films on si ( 100 ) substrates were prepared by using thermal evaporation technique following by two - step annealing process : high quality zno thin films and mgxzn1 - xo alloy films have been grown on si ( 100 ) substrates with mgo buffer layers by using thermal evaporation technique following by two - step annealing process
    本文介绍了采用电子束蒸发方法在si补底上制备出了高纯度的金属锌膜,然后通过二次退火得到了具有六角结构的高质量氧化锌多晶薄膜材料,另外,还采用电子束蒸发mgo薄膜作为缓冲层二次退火金属锌膜的方法制备出了高质量氧化锌多晶薄膜材料和mgzno合金薄膜材料。
  • The intrinsic carrier concentration reduces when decreasing the v / iii ratio . the high quality of in0 . 53gao . 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs . when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0 . 2 um the mobility becomes the maximum and the carrier concentration is the lowest
    /比对外延层的表面形貌有较大影响,增大/比有利于提高材料的结晶质量;随着/比增加,迁移率升高;本征载流子浓度随着/比减少而降低; ash _ 3和ph _ 3转换时间在10秒到30秒之间可以获得质量较好的ingaas外延层;在inp缓冲层厚度为0 . 2 m时迁移率达到最大,载流子浓度达到最低。
  • Ternary compound bnxpi - x films of quality are deposited and the ultraviolet absorbance characteristics of bnxp , - x films were investigated in the thesis , too . with the quantity of phosphorus dopant , the optical bandgap modulation of bnxpi is achieved successfully . in addition , the combined intensity of bnxp , - x films and substrates was enhanced by depositing the buffer layer
    实验采用磷对氮化硼进行掺杂,成功地在光学石英玻璃衬底上沉积了磷掺杂氮化硼( bn _ xp _ ( 1 - x ) )薄膜,研究了该薄膜的紫外光敏特性,其吸收边在240nm 400nm的紫外波段内可以连续变化,同时也实现了对氮化硼光学带隙在3 . 8ev 5 . 3ev范围内的连续可控调制。
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