mesfet造句

• Compared with gunn diode, mesfet has the advantage of high efficiency, flexible design and easy to integrate . the two ports negative resistance oscillating network is analyzed and an extremum-line model of microwave transistor oscillating network output impedance is developed
  mesfet较之gunn二极管在vco电路中有效率高、设计灵活性、便于集成等优点，所以本文着重介绍了变容管调谐微带结构mesfetvco的研制工作。
• It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ), and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects
  sige异质结双极晶体管（sigehbt）的高频性能大大优于si双极晶体管（sibjt），并在某些方面优于algaas/gaasmesfet，所以sigehbt具有广阔的应用前景。
• The optical effect on the uniformity of mesfet threshold voltage is studied . results show that optical radiation enhances the drain-source current of the gaas mesfet, and makes the threshold voltage to move toward negative direction . optical radiation enhances the uniformity of mesfet threshold voltage
  本文研究了光照对阈值电压均匀性的影响，观察到在光照条件下，耗尽型mesfet的沟道电流增加，阈值电压向负方向增加，光照提高了阈值电压的均匀性。
• The optical effect on the uniformity of mesfet threshold voltage is studied . results show that optical radiation enhances the drain-source current of the gaas mesfet, and makes the threshold voltage to move toward negative direction . optical radiation enhances the uniformity of mesfet threshold voltage
  本文研究了光照对阈值电压均匀性的影响，观察到在光照条件下，耗尽型mesfet的沟道电流增加，阈值电压向负方向增加，光照提高了阈值电压的均匀性。
• The optical effect on the uniformity of mesfet threshold voltage is studied . results show that optical radiation enhances the drain-source current of the gaas mesfet, and makes the threshold voltage to move toward negative direction . optical radiation enhances the uniformity of mesfet threshold voltage
  本文研究了光照对阈值电压均匀性的影响，观察到在光照条件下，耗尽型mesfet的沟道电流增加，阈值电压向负方向增加，光照提高了阈值电压的均匀性。
• These devices include light-emitting diode, laser diode, uv-detector, mesfet, hemt, modfet etc . since 1990's, on the basis of advanced techniques of materials preparation, gan-based leds and lds were achieved successfully, and leds on sapphire substrates have already been commercialized
  九十年代以来，在先进制备技术的基础上，gan基leds和lds分别研制成功，其中蓝宝石衬底上的leds已经进入了商品化。gan基微电子器件也得到了广泛的关注，取得了一定的研究进展。
• The device structure and physical models of 4h-sic mosfet and mesfet are built and the properties are simulated with the use of medici software . the influence of the temperature and structure parameter on the device's properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately . the maximum power density of 4h-sic mesfet is as high as 19.22w / mm . at the same time, the processes of sic field-effect transistor is studied and the fabrication processes suitable to sic mosfet are developed .
  论文分析建立了4h-sicmosfet和mesfet器件的结构模型和物理模型，采用二维器件模拟软件medici对4h-sicmosfet和mesfet的输出特性进行了模拟分析，研究了温度和结构参数对器件特性的影响，表明两种器件的击穿特性均没有负阻现象，击穿电压分别达到85v和209v，由此得到4h-sicmesfet最大功率密度可达到19.22wmm；同时，研究了sic场效应晶体管的制作工艺，初步得到了一套制造sicmosfet器件的制造工艺流程，研制出了4h-sicmosfet器件。
• The device structure and physical models of 4h-sic mosfet and mesfet are built and the properties are simulated with the use of medici software . the influence of the temperature and structure parameter on the device's properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately . the maximum power density of 4h-sic mesfet is as high as 19.22w / mm . at the same time, the processes of sic field-effect transistor is studied and the fabrication processes suitable to sic mosfet are developed .
  论文分析建立了4h-sicmosfet和mesfet器件的结构模型和物理模型，采用二维器件模拟软件medici对4h-sicmosfet和mesfet的输出特性进行了模拟分析，研究了温度和结构参数对器件特性的影响，表明两种器件的击穿特性均没有负阻现象，击穿电压分别达到85v和209v，由此得到4h-sicmesfet最大功率密度可达到19.22wmm；同时，研究了sic场效应晶体管的制作工艺，初步得到了一套制造sicmosfet器件的制造工艺流程，研制出了4h-sicmosfet器件。
• Especially, mesfet devices fabricated on lec si-gaas substrate have been adopted into very large-scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively . therefore, it is necessary to study the influence of defects in substrate material of lec si-gaas on performance of mesfet to meet the need of design and fabrication of gaas ic
  以液封直拉半绝缘gaas为衬底的金属半导体场效应晶体管(mesfet)器件是超大规模集成电路和单片微波集成电路广泛采用的器件结构，因此研究lec法生长si-gaas(lecsi-gaas)衬底材料特性对mesfet器件性能的影响，对gaas集成电路和相关器件的设计及制造是非常必要的。
• Especially, mesfet devices fabricated on lec si-gaas substrate have been adopted into very large-scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively . therefore, it is necessary to study the influence of defects in substrate material of lec si-gaas on performance of mesfet to meet the need of design and fabrication of gaas ic
  以液封直拉半绝缘gaas为衬底的金属半导体场效应晶体管(mesfet)器件是超大规模集成电路和单片微波集成电路广泛采用的器件结构，因此研究lec法生长si-gaas(lecsi-gaas)衬底材料特性对mesfet器件性能的影响，对gaas集成电路和相关器件的设计及制造是非常必要的。
• We analyzed the dependence of equivalent circuit parameters of mesfet switch on material and device structure . for modeling, we designed and fabricated six set of mesfet switches with different gate width, then measured their performance and extracted switch model parameters . mesfet switch database corresponding to the mmic product line is then established, and using the dependence of switch model parameters on gate peripheral we can attain the mesfet switch performance with any gate width through parameters scaling
  移相器电路采用gaasmesfet开关作为控制元件，研究了mesfet开关等效电路参数与材料和器件结构参数的关系，设计制作了不同栅宽的六组mesfet开关，并进行参数测试和模型参数提取，建立了相应于mmic工艺线的mesfet开关模型库；根据开关模型参数随栅宽的变化规律，可以实现任意栅宽mesfet开关的参数定标工作。
• We analyzed the dependence of equivalent circuit parameters of mesfet switch on material and device structure . for modeling, we designed and fabricated six set of mesfet switches with different gate width, then measured their performance and extracted switch model parameters . mesfet switch database corresponding to the mmic product line is then established, and using the dependence of switch model parameters on gate peripheral we can attain the mesfet switch performance with any gate width through parameters scaling
  移相器电路采用gaasmesfet开关作为控制元件，研究了mesfet开关等效电路参数与材料和器件结构参数的关系，设计制作了不同栅宽的六组mesfet开关，并进行参数测试和模型参数提取，建立了相应于mmic工艺线的mesfet开关模型库；根据开关模型参数随栅宽的变化规律，可以实现任意栅宽mesfet开关的参数定标工作。
• We analyzed the dependence of equivalent circuit parameters of mesfet switch on material and device structure . for modeling, we designed and fabricated six set of mesfet switches with different gate width, then measured their performance and extracted switch model parameters . mesfet switch database corresponding to the mmic product line is then established, and using the dependence of switch model parameters on gate peripheral we can attain the mesfet switch performance with any gate width through parameters scaling
  移相器电路采用gaasmesfet开关作为控制元件，研究了mesfet开关等效电路参数与材料和器件结构参数的关系，设计制作了不同栅宽的六组mesfet开关，并进行参数测试和模型参数提取，建立了相应于mmic工艺线的mesfet开关模型库；根据开关模型参数随栅宽的变化规律，可以实现任意栅宽mesfet开关的参数定标工作。
• We analyzed the dependence of equivalent circuit parameters of mesfet switch on material and device structure . for modeling, we designed and fabricated six set of mesfet switches with different gate width, then measured their performance and extracted switch model parameters . mesfet switch database corresponding to the mmic product line is then established, and using the dependence of switch model parameters on gate peripheral we can attain the mesfet switch performance with any gate width through parameters scaling
  移相器电路采用gaasmesfet开关作为控制元件，研究了mesfet开关等效电路参数与材料和器件结构参数的关系，设计制作了不同栅宽的六组mesfet开关，并进行参数测试和模型参数提取，建立了相应于mmic工艺线的mesfet开关模型库；根据开关模型参数随栅宽的变化规律，可以实现任意栅宽mesfet开关的参数定标工作。
• In this paper, gaas midf switch's design and fabrication programme are described in details . first of all, gaas mesfet's principle is analysed and a switch circuitry design methodology is supposed and, in the meanwhile, the transient parameters are discussed . based on above ones, a switch circuit topology is finished, which is designed and optimized by modern cad technology
  首先，在深入了解mesfet的工作机理，分析讨论了gaasmesfet的工作原理并提出一种gaas中频开关电路的设计方法，进行了瞬态参数设计与分析。在这一系列研究工作基础上，进行开关电路的拓扑设计，借助现代计算机技术，对电路进行了计算机辅助设计和优化。
• We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain-source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side-gate and mesfet, relation between sidegating effect and floating gate, and so on
  本文还采用平面选择离子注入隔离工艺，开展了旁栅效应的光敏特性、迟滞现象、旁栅效应对mesfet阈值电压的影响、mesfet漏源电压对旁栅阈值电压的影响、漏源交换对旁栅阈值电压的影响、旁栅阈值电压与旁栅距的关系、旁栅效应与浮栅的关系等研究。
• We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain-source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side-gate and mesfet, relation between sidegating effect and floating gate, and so on
  本文还采用平面选择离子注入隔离工艺，开展了旁栅效应的光敏特性、迟滞现象、旁栅效应对mesfet阈值电压的影响、mesfet漏源电压对旁栅阈值电压的影响、漏源交换对旁栅阈值电压的影响、旁栅阈值电压与旁栅距的关系、旁栅效应与浮栅的关系等研究。
• We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain-source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side-gate and mesfet, relation between sidegating effect and floating gate, and so on
  本文还采用平面选择离子注入隔离工艺，开展了旁栅效应的光敏特性、迟滞现象、旁栅效应对mesfet阈值电压的影响、mesfet漏源电压对旁栅阈值电压的影响、漏源交换对旁栅阈值电压的影响、旁栅阈值电压与旁栅距的关系、旁栅效应与浮栅的关系等研究。
• The experimental results showed that firstly, the distribution of resistiveity, mobility, carrier concentration, epd and ab-epd in gaas substrate was not uniform; secondly, the distribution of electrical parameters depended on that of epd and ab-epd; thirdly, mesfet devices performance correlated with ab microdefects; last, as shown by pl mapping results, it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices
  实验结果表明，lecsi-gaas的电阻率、迁移率、载流子浓度、位错密度和ab微缺陷分布都不是均匀的，且电参数的分布与ab-epd、位错密度分布有关。制作的mesfet器件的性能参数分布与ab微缺陷有明显联系。从plmapping测量结果可以看出材料的衬底参数好，则pl谱的强度高，pl谱均匀性也好，器件参数也好，就有可能制作出良好的器件与电路。
• The experimental results showed that firstly, the distribution of resistiveity, mobility, carrier concentration, epd and ab-epd in gaas substrate was not uniform; secondly, the distribution of electrical parameters depended on that of epd and ab-epd; thirdly, mesfet devices performance correlated with ab microdefects; last, as shown by pl mapping results, it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices
  实验结果表明，lecsi-gaas的电阻率、迁移率、载流子浓度、位错密度和ab微缺陷分布都不是均匀的，且电参数的分布与ab-epd、位错密度分布有关。制作的mesfet器件的性能参数分布与ab微缺陷有明显联系。从plmapping测量结果可以看出材料的衬底参数好，则pl谱的强度高，pl谱均匀性也好，器件参数也好，就有可能制作出良好的器件与电路。