mesfet造句

• Metal semiconductor field effect transistor mesfet
  金属半导体场效应管
• Investigation of the pinch off voltage of sic-mesfet
  器件的夹断电压
• Transient-state thermal model of gaas mesfet microwave pulsed power amplifier
  脉冲微波功率器件瞬态热场模型
• Multi-gate gaas mesfet switch
  开关的结构设计
• Influence of ab microdefects in lec semi-insulating gaas substrate on property of mesfet
  对有机电致发光器件特性的影响
• Numerical simulation of the influence of high power electromagnetic pulses on gaas mesfet
  高功率电磁脉冲对砷化镓金属半导体场效应管的影响
• Deep level defects is one of factors responses for the distribution of mesfet threshold voltage
  我们认为这一现象与sigaas衬底深能级缺陷有关。
• For the first time, an integrated hall switch based on gaas mesfet process was fabricated
  论文首次采用gaas直接离子注入mesfet集成电路工艺，研制出了gaas霍尔开关集成电路。
• A power circuit is designed for mesfet vco circuit with dc + 5v output and adjustable negative voltage output
  该电路由十12v电源供电，提供正负两组电压输出，输出电压幅度可调。
• 2 . the nonlinear input-output characteristics of a gaas mesfet is modeled by the use of volterra series in the frequency domain
  本文通过神经网络和volterra级数的等价性，用训练后的神经网络确定出volterra级数的核函数。
• Results show that threshold voltage uniformity of mesfet fabricated in planar selectively implanted process is better than that of in recessed-gate process
  结果表明，采用平面工艺制备的gaasmesfet阈值电压均匀性比采用挖槽工艺制备的gaasmesfet阈值电压均匀性更好。
• It simplifies the optimization of feedback components and accelerates the design of negative impedance oscillator . a 14ghz mesfet vco is designed and simulated with hp ads
  根据该设计理论，用hpads进行了14ghzmesfetvco的设计与仿真，并对设计的电路进行了制作与测试。
• Single pole double throw switch ( spdt ) mainly complete the conversion of the signal between difference channels, the control element in common use is pin diode and gaas mesfet
  单刀双掷开关(spdt)主要用来完成信号在不同信道间的转换，其常用的控制器件有pin管和gaasmesfet两种。
• At last, we tried to explain the reason of the above relationship . on the other hand, we proved the relationship between ab microdefects and mesfet devices performance via pl mapping method
  同时，解释了产生上述关系的原因。另外，试验还利用plmapping技术从另一个角度检验了衬底质量和mesfet器件电性能的关系。
• The influence of different process on gaas mesfet sidegating effect has been studied . these process include recessed-gate process, planar selectively implanted process and planar boron implanted process
  本文对分别采用隔离注入挖槽、平面自隔离和平面离子注入隔离三种工艺制备的gaasmesfet旁栅效应进行了研究。
• On the basis of theory analysis of phase shifter, we designed and fabricated the x-band 5-bit monolithic phase shifter circuit on the gaas mmic product line . the phase shifter circuit use gaas mesfet switches as control devices
  在移相器原理分析的基础上，结合gaasmmic工艺线，设计并制备了x波段五位mmic移相器电路。
• Namely, the electric field at the drain-side edge of the gate decreases with the increasing of negative charge density in the surface, so the breakdown voltage of gaas mesfet's will increase
  表面受主态的增多使表面负电荷密度增大，表面聚集的负电荷可以分散漏侧栅边缘处的电力线密度，减弱了栅靠漏一侧的电场强度，击穿电压提高。
• In addition, we fabricated mesfet devices on lec si-gaas substrate and studied the relationship between these parameters and mesfet devices performance such as gm, saturated drain current and threshold voltage
  并以lecsi-gaas晶体为衬底制作注入型mesfet器件，研究了gaas衬底的ab微缺陷和mesfet器件电性能(包括跨导、饱和漏电流和阈值电压)的关系。
• In addition, we fabricated mesfet devices on lec si-gaas substrate and studied the relationship between these parameters and mesfet devices performance such as gm, saturated drain current and threshold voltage
  并以lecsi-gaas晶体为衬底制作注入型mesfet器件，研究了gaas衬底的ab微缺陷和mesfet器件电性能(包括跨导、饱和漏电流和阈值电压)的关系。
• mesfet digital logic families : performance criteria for logic . logic families : normally-on logic ( fl, bfl, sdfl ); normally-off logic ( dcfl ); comparison offamilies; examples of fabrication sequences; performance data; state-of-the-art commercially
  10金属-半导体接面场效电晶体数位逻辑家族：逻辑效能标准。逻辑家族：常开逻辑(fl，bfl，sdfl)，常关逻辑(dcfl)，家族比较，制程步骤?例，效能数据，已商业化之科技产品。