nmos晶体管的英文
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"nmos晶体管"怎么读用"nmos晶体管"造句
英文翻译手机版
- nmos transistor
- "晶体管"英文翻译 transistor; crystal valve
- "nmos" 英文翻译 : 沟道金属氧化物半导体; 沟道金氧半导体器件; 沟信道金属氧化物半导体; 晶体管的临界电压相对于基质为正; 型金氧半导体; 在同一个硅衬底上混合制造的工艺
- "晶体管" 英文翻译 : transistor; crystal valve 硅晶体管 silicon transistor; 锗晶体管 germanium transistor; 晶体管放大器 transistor amplifier; transistorized amplifier; 晶体管管座 stem; 晶体管计算机 transistored computer; 晶体管接收机 transistor receiver; 晶体管收音机 transistor; transistor radio; 晶体管钟transistor clock; 晶体管自动计算机 transistor automatic computer
- "晶体管;半导体管" 英文翻译 : transistor
- "晶体管 晶体管逻辑" 英文翻译 : transistor transistor logic; ttl logic
- "晶体管-晶体管逻辑门" 英文翻译 : transistor-transistor logic gate
- "晶体管,晶体管收音机" 英文翻译 : transistor
- "晶体管晶体管逻辑" 英文翻译 : logic, transistor-transistor (ttl); t2l; transistor-transistor logic; twin transistor logic
- "mos晶体管" 英文翻译 : mos transistor
- "npn晶体管" 英文翻译 : npn transistor
- "npn型晶体管" 英文翻译 : npn transister
- "pnp晶体管" 英文翻译 : pnp transistor; pnp-ransistor
- "pnp型晶体管" 英文翻译 : pnp transistor
- "p型晶体管" 英文翻译 : p-type transistor
- "t晶体管模式" 英文翻译 : tee transistor model
- "薄膜晶体管" 英文翻译 : tft thin film transistor; tfts; tft,thin film transistor; thin-film transistor
- "本征晶体管" 英文翻译 : intrinsic transistor
- "变容晶体管" 英文翻译 : capacitance-variable tra istor; capacitance-variable transistor
- "玻封晶体管" 英文翻译 : gla sealed tra istor; glass sealed transistor
- "场控晶体管" 英文翻译 : field transistor; field-controlled transistor; fieldistor
- "场效晶体管" 英文翻译 : fet; field-effect transistor
- "存储晶体管" 英文翻译 : memory transistor
- "带型晶体管" 英文翻译 : stritransistor
- "单极晶体管" 英文翻译 : unipolar tra istor; unipolar transistor
- "单结晶体管" 英文翻译 : ujt unijunction transistor; unijunction tra istor; unijunction transistor
例句与用法
- This is due to the fact that each transistor in a cmos circuit is actually made from a pmos transistor and an nmos transistor
这是由于cmos里的每一个晶体管都是由一个pmos和一个nmos晶体管组成的。 - Compared with the similar research results , the weighted control ic here has the following characteristics : ( 1 ) the circuit structure is simpler ; ( 2 ) the chip ' s fabrication is compatible with standard cmos process ; ( 3 ) n - mosfets with high w / l ratio and short channels are used for weighting and output to reduce the insertion loss ; ( 4 ) the weighting factor varies in a relatively wide range with the controlling signals ; ( 5 ) input and output impedance approach 50 in low frequency ( e . g . 50mhz ) , while in higher frequency they slightly deviate from 50 , hence the energy reflection lower than 0 . 1 ; ( 6 ) it completes the functions of sampling , weighting , controlling and summing of high frequency analog signals
它的加权控制电路与已报道的相关电路相比具有如下特点:电路结构简单;制造工艺与普通cmos工艺兼容:短沟道,高宽长比的nmos晶体管具有低的通导电阻,将其作为加权、输出器件可降低由电路引起的插入损耗;改变加权信号,可实现权值在较大范围内的连续变化;输入、输出阻抗在低频(如50mhz )下接近50 ,而在高频下略有偏离50 ,但反射系数均低于0 . 1 ;实现了对高频信号的取样、加权、控制、叠加功能的迭加。 - A switch ic for analog signal processing is designed and implemented , which can fulfill the functions of sampling , weighting , controlling and summing of high frequency analog signals . the circuit consists of three parts : four channel analog switches , a voltage reference and the control circuitry . each analog switch is comprised of two high - transconductance n - mosfets with high w / l ratio , which realize the fine tuning and coarse tuning of the input signal respectively
本文研究并设计了一种可对高频信号进行取样、加权、控制、叠加的模拟信号处理丌关集成电路,它包括模拟开关、电压基准源和移位寄存器三个功能模块,通过两个高宽长比的高跨导nmos晶体管实现权值的粗调和微调。
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