n型半导体的英文

• n-semiconductor
• n-type semiconductor
• negative-type semiconductor
• semiconductor

• "n"英文翻译    N ＝nuclear 核的：N-waste 核废料。
• "型"英文翻译    mould; model
• "半导体"英文翻译    semiconductor
• "n 型半导体" 英文翻译 :    n doped semiconductor; n type semiconductor
• "n 型半导体腐蚀速度" 英文翻译 :    n etch rate
• "p 型半导体" 英文翻译 :    p doped semiconductor; p type semiconductor
• "p型半导体" 英文翻译 :    p semiconductor; p type semiconductor; p-type semiconductor; p-type semiconuctor; psemiconductor; semiconductor
• "型半导体" 英文翻译 :    n doped semiconductor; n type semiconductor; n-type semiconductorn; p doped semiconductor p type semiconductor; p-type semiconductor p; p-type semiconductorp; type semiconductor p
• "补偿型半导体" 英文翻译 :    compensated semiconductor; compensatedsemiconductor
• "电子型半导体" 英文翻译 :    electronic semicoductor
• "多谷型半导体" 英文翻译 :    many valley semiconductor
• "发夹型半导体" 英文翻译 :    hairpin conductor
• "共价型半导体" 英文翻译 :    covalent semiconductor; covalent type semi conductor
• "过剩型半导体" 英文翻译 :    excess semiconductor
• "耗尽型半导体" 英文翻译 :    deplete semiconductor; depletion semiconductor
• "互补型半导体" 英文翻译 :    compensated semiconductor
• "还原型半导体" 英文翻译 :    reduction type semiconductor
• "简并型半导体" 英文翻译 :    degenerate semiconductor
• "空穴型半导体" 英文翻译 :    p-type semiconductor
• "双极型半导体" 英文翻译 :    bipolar semiconductor
• "氧化型半导体" 英文翻译 :    oxidation type semiconductor
• "p型半导体电导率" 英文翻译 :    p type conductivity; p-type conductivity
• "空穴导电型半导体" 英文翻译 :    p-type semiconductor; psemiconductor
• "尸浇注型半导体掐" 英文翻译 :    resin molded semiconductor device
• "体型半导体应变计" 英文翻译 :    bulk type semiconductor strain gauge; bulk zinc oxide varistor

• When a metal is brought into contact with an n-type semiconductor, electrons will flew from the semi-conductor to the metal .
  使一块金属与n型半导体接触时，电子将从半导体流到金属。
• Na - doped model shows the character of p - type semiconductor , and ni - doped model is n - type semiconductor
  掺na后材料具有p型半导体的特性，而掺ni后则具有n型半导体的特性。
• The results showed that the mg2si - based thermoelectric material doped with te and sb was still n - type , but that doped with ag changed into p - type
  结果表明：掺杂te 、 sb元素得到的mg _ 2si基热电材料仍为n型半导体；掺杂ag元素得到的mg _ 2si基热电材料转变为p型半导体。
• With doped ni element , the material converted into n - type semiconductor , what ' s more it has very low seebeck coefficient which shows ni is + 4 in this material
  掺入一定量的ni后，转变为n型半导体材料，它的seebeck系数非常小，表明ni在这个化合物中的表观化学价的+ 4价。
• Xrd reveals a mixture structure of the face - centered cubic and hexagonal close - packed phases . the sn doped makes the electrical conductivity change from insulator to n - type semiconductor
  用共蒸发法制备掺锡的c60薄膜，发现掺入的sn原子的薄膜导电性由原来的绝缘体变为n型半导体。
• To avoid the noise and the polarization effect , the most suitable structure for cdse detectors made up of perfect crystal wafers should be that : it - n contact as anode , mis contact as cathode
  当晶片的质量较好时， cdse探坝器的最佳结构是正极采用高阻半导体低阻n型半导体铡删x负极采用misw 。
• The influences of holding time , reaction temperature , particle size of the products and doping sequence on thermoelectric properties of mg2si were discussed in detail
  结果表明：在823k下进行固相反应并保温8小时是合适的，对mg _ 2si这种n型半导体材料而言， te和sb的掺入顺序对其热电性能几乎没有影响。
• Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior . ito has high prominent transmittance , high infrared reflectance , good electrical conductivity , ito applied as gas sensors , photovoltaic devices , heat reflecting mirrors , solar cells , flat panel displays , liquid crystal displays , electroluminescent , devices and organic light - emitting diodes ( oled ) etc . although preparations and applications of ito films have been studied deeply . nano - ito composites hardly studied
  氧化铟锡( ito )是一种高简并的n型半导体，由于具有导电性，可见光高透过率，红外反射性，稳定的化学性，被广泛应用于热反射建筑玻璃、抗静电涂层，太阳能电池，热发射镜，平板显示器和液晶显示屏，传感器，有机光致二级管( oled )等方面，国内外对高质量的ito薄膜的制备和应用进行了深入的研究，但是很少有ito纳米粒子与高分子材料复合的报道。