p型半导体的英文

• p semiconductor
• p type semiconductor
• p-type semiconductor
• p-type semiconuctor
• psemiconductor
• semiconductor

• "p"英文翻译     be p and q 上等。 mind [b ...
• "型"英文翻译    mould; model
• "半导体"英文翻译    semiconductor
• "p 型半导体" 英文翻译 :    p doped semiconductor; p type semiconductor
• "p型半导体电导率" 英文翻译 :    p type conductivity; p-type conductivity
• "n 型半导体" 英文翻译 :    n doped semiconductor; n type semiconductor
• "n型半导体" 英文翻译 :    n-semiconductor; n-type semiconductor; negative-type semiconductor; semiconductor
• "型半导体" 英文翻译 :    n doped semiconductor; n type semiconductor; n-type semiconductorn; p doped semiconductor p type semiconductor; p-type semiconductor p; p-type semiconductorp; type semiconductor p
• "补偿型半导体" 英文翻译 :    compensated semiconductor; compensatedsemiconductor
• "电子型半导体" 英文翻译 :    electronic semicoductor
• "多谷型半导体" 英文翻译 :    many valley semiconductor
• "发夹型半导体" 英文翻译 :    hairpin conductor
• "共价型半导体" 英文翻译 :    covalent semiconductor; covalent type semi conductor
• "过剩型半导体" 英文翻译 :    excess semiconductor
• "耗尽型半导体" 英文翻译 :    deplete semiconductor; depletion semiconductor
• "互补型半导体" 英文翻译 :    compensated semiconductor
• "还原型半导体" 英文翻译 :    reduction type semiconductor
• "简并型半导体" 英文翻译 :    degenerate semiconductor
• "空穴型半导体" 英文翻译 :    p-type semiconductor
• "双极型半导体" 英文翻译 :    bipolar semiconductor
• "氧化型半导体" 英文翻译 :    oxidation type semiconductor
• "空穴导电型半导体" 英文翻译 :    p-type semiconductor; psemiconductor
• "尸浇注型半导体掐" 英文翻译 :    resin molded semiconductor device
• "体型半导体应变计" 英文翻译 :    bulk type semiconductor strain gauge; bulk zinc oxide varistor
• "小型半导体存储器" 英文翻译 :    small semiconductor memory

• Cd1 - xmnxin2te4 is p - type semiconductor
  晶体为p型半导体。
• Semiconductors containing such impurities are called p - type semiconductors
  含有这类杂质的半导体叫做p型半导体。
• Na - doped model shows the character of p - type semiconductor , and ni - doped model is n - type semiconductor
  掺na后材料具有p型半导体的特性，而掺ni后则具有n型半导体的特性。
• For calcium cobalt oxide ( ca3co2o6 ) which is a p - type semiconductor , the thermoelectric properties is as good as other co - based oxide thermoelectric materials
  Ca _ 3co _ 2o _ 6是一个p型半导体材料，它的热电性能和co的其它的氧化物热电材料性能不相上下。
• The results showed that the mg2si - based thermoelectric material doped with te and sb was still n - type , but that doped with ag changed into p - type
  结果表明：掺杂te 、 sb元素得到的mg _ 2si基热电材料仍为n型半导体；掺杂ag元素得到的mg _ 2si基热电材料转变为p型半导体。
• It was found that , the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor , both the charge density and the resistivity increase with x value , while the carrier mobility decreases with x
  晶体的电学性能，发现生长态的mncd晶体均为p型半导体。随着组分x值的增大，载流于的浓度np减小，迁移率p 。
• The sheet resistivity dramatically decreases to 106 ? / ? . the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too . te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films
  ，面载流子浓度增大到109 / cm2的数量级，迁移率亦增大到104cm2 / v . s ，掺杂te元素改善了cdte薄膜的电学性质，使其变为良好的p型半导体。