Results show that threshold voltage uniformity of mesfet fabricated in planar selectively implanted process is better than that of in recessed - gate process 结果表明，采用平面工艺制备的gaasmesfet阈值电压均匀性比采用挖槽工艺制备的gaasmesfet阈值电压均匀性更好。
In order to narrow the wide distribution of the erasure threshold voltage and eliminate the over - erased cells , a self - convergence soft - programming scheme is also proposed 论文同时还提出一种新型的自收敛sibe软编程操作模式，对过擦除存储单元的阈值电压分布具有很好的收敛效果。
Applying the differential equation and boundary condition of the director tilt angle , the essential characters are discussed , which include the threshold voltage and the saturation voltage 根据满足的微分方程和边界条件，研究了液晶盒的基本性质，包括阈值电压和饱和电压。
Layout for measuring the uniformity of threshold voltage has been designed , including structures for measuring many material and process parameters . this layout is adaptable to many process 本文设计了一套适合多种工艺的阈值电压均匀性研究测试版图，包括多种材料参数和工艺参数测试图形。
In order to study the influence of different process on the threshold voltage uniformity , gaas mesfets are fabricated both in recessed - gate process and planar selectively implanted process 分别对采用隔离注入挖槽工艺和平面选择离子注入自隔离工艺制备的gaasmesfet阈值电压均匀性进行了比较研究。
Especially in cmos n - well integrated circuits technology , the body effect will cause the nmos threshold voltage following the pumping voltage to be lifted and then the highest pumping voltage will be limited 特别是在n阱集成电路工艺，体效应使得每一阶nmos管的阈值电压都不断抬升，以至于电荷泵的最高输出电压受到限制。
The results show that the change of the tilt angle of director increases with the increase of electric field or decrease of the anchoring . and the threshold voltage of lcd decreases with the increase of the anchoring 给出的结果表明，指向矢倾角的变化随着电场的增大或锚定强度的减小而变大；液晶盒的阈值电压随锚定强度的增大而减小。
In conventional cmos charge pump circuits , the pumping high voltage is limited by mos threshold voltage , so that it can not use less cascade stages to pull up a high voltage which we want to generate 在传统的cmos电荷泵电路中，电荷泵输出的电压受mos管的阈值电压限制，所以当要求电荷泵的输出电压较高时，则不得不连很多阶来达到要求。
Under a unified model of carrier transport over trap state established potential barrier at drain side , device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood 我们通过载流子在漏极附加陷阱态势垒的输运模型,解释了器件在应力后出现的阈值电压的退化现象和非对称性开态电流恢复现象。
In addition , we fabricated mesfet devices on lec si - gaas substrate and studied the relationship between these parameters and mesfet devices performance such as gm , saturated drain current and threshold voltage 并以lecsi - gaas晶体为衬底制作注入型mesfet器件，研究了gaas衬底的ab微缺陷和mesfet器件电性能(包括跨导、饱和漏电流和阈值电压)的关系。
