Simulating threshold voltage shift of mos devices due to radiation in the low - dose range 低剂量辐照条件下的mosfet因辐照导致的阈值电压漂移的模拟
This peak voltage setting becomes the threshold used for calculation of the voltage response curve for the instrument 这个峰值电压设置为阈值电压,用来计算仪器的电压响应曲线。
The influence of the flexoelectric effect on the threshold voltage , the saturation voltage and the symmetry breaking parameter is discussed and calculated carefully 挠曲电效应对阈值电压、饱和电压和对称性破缺参量有重要影响。
With the development of integrate circuits and increasing of the integration , the research of the threshold voltage uniformity is becoming more and more important 随着gaas集成电路的发展,集成度的提高,对gaas单晶阈值电压均匀性的要求越来越高。
Problems about fabrication of sige - oi substrate , low - temperature gate oxidation and source / drain ion implantation are discussed after considering technology level and reported articles 然后用二维模拟软件medici模拟,得到器件的阈值电压约为- 0 . 1v ,泄漏电流很小。