After many experiments , 200mm solar cell czsi can be pulled successfully . the result showing that heat screen and argon flow is the key points of 200mm solar cell czsi growth 经多次试验成功地拉制出了200mm的低氧碳太阳能级硅单晶，并与生长150mmczsi单晶的16 ”热系统进行了试验对比。
Also , the ncz ( nitrogen doped silicon ) , which is my laboratory research characteristic , is research focus at present because it has strong mechanical strength and advantage intrinsic gettering property 同时微氮硅单晶由于其较强的机械强度和内吸杂能力等优点是目前研究的热点，也是我们实验室的特色。
It ' s well known that silicon is a kind of classic brittle material at room temperature , meaning it is linear elastic until catastrophic fracture , and its fracture is not deterministically predictable 我们都知道，硅单晶材料在常温下的典型的脆性材料，其断裂的不可预知性和瞬间性导致它产生的破坏是巨大的。
It was found that nitrogen increased the fracture strength of silicon single crystal . we consider that the nitrogen may change the shockley band on silicon surface and form complex to influence the fracture procedure 本文从硅材料的基本概念入手，阐述了硅单晶材料的脆性断裂、脆塑转变以及在热处理过程中的翘曲研究，并通过这三个部分进行实验。
In this paper , firstly , the effect of heavy boron - doping on oxygen precipitation was investigated . after annealed at different conditions , it is found that oxygen precipitation is enhanced by heavily boron doping , especially at high temperature 本文研究了直拉重掺硼单晶硅的氧沉淀行为，着重研究了直拉重掺硼硅单晶中的氧沉淀的热处理、内吸杂、 rtp处理等性能。
With the film thickness , which was determined using transmission electron microscopy ( tem ) , and the known material number density ( since the film is epitaxial on silicon , the number density is the same as in silicon crystals ) , this determines the ge concentration 由通过隧道电镜（ tem ）决定的膜厚和已知材料的密度（因为薄膜为硅上外延，密度与硅单晶相同） ，决定了锗的浓度。
Heavily as - doped silicon substrates are adopted by many device manufactories because of higher as - doping density . therefore , quantitative determination of oxygen precipitation and induced - defects in heavily as - doped silicon is important to the realization of ig 重掺砷硅衬底片正日益受到器件厂家的青睐，所以研究重掺砷硅单晶中的氧沉淀及诱生缺陷对实现重掺衬底的内吸除有重大意义。
For the substrate of heavily boron doped wafer , it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth , which is beneficial for ig and therefore improve the yield of ulsi 另一方面，在相同的晶体生长条件下，重掺硼硅单晶氧含量升高，氧沉淀被增强，能形成有效吸杂点，提高硅片机械强度，抑制void缺陷，有利于提高ulsi的成品率。
The demand of the wafer ' s quality become higher too . the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing . in this paper , the mechanism and dynamics process of silicon polishing are systematically analyzed 随着集成电路向着甚大规模集成电路( ulsi )日新月异的发展，作为衬底材料的硅单晶片的尺寸越来越大，特征尺寸也不断减小，对硅衬底抛光片的抛光质量的要求也越来越高。
It seems the ncz silicon has a higher bdt temperature compared with cz silicon ' s . it is suggested that the elastic effects and the electronic effects of nitrogen doped in silicon made the bdt temperature higher . the observation of fracture surface showed that it was curves at high temperature in brittle fracture , but smooth planes at room temperature 当温度升高达到硅材料的脆塑转变时，材料的断裂强度有个很大的提高，但是首次发现含氮硅单晶却不明显，而且掺氮的硅单晶脆塑转变温度比普通单晶高，可能是氮的掺入改变了硅材料的内部晶体结构及电子结构。
