Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon . since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates , the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing . moreover , as for the technique to generate dz by rtp in lightly boron - doping samples , it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature , followed annealing and ambient of rtf as well 结果显示，对于普通轻掺硅片能形成明显的很宽的洁净区的rtp预处理工艺，应用于重掺硼样品时没有洁净区形成，所以rtp预处理获得洁净区的工艺不适用于重掺硼硅片，硼的大量掺杂对氧沉淀促进效果大于高浓度的空位对氧沉淀的洲排浙江大学硕士学位论文李春龙：直拉重掺硼硅单晶中氧沉淀的研究促进效果；大量空位的引入，有利于释放氧沉淀生长过程的内应力，适当增加重掺硼样品氧沉淀密度，减少其尺寸，并伴有层错生成。
Thus it is very important to investigate the behavior of oxygen and oxygen precipitation in heavily boron - doping czochralski silicon ( czsi ) . however , there are few papers about it , especially the effect of rtp . in this research , oxygen precipitation in heavily boron - doping czsi in different conditions have been systematically investigated 但是，相对于研究得较为深入的普通轻掺直拉硅中氧沉淀而言，国际上对直拉重掺硼硅单晶中氧沉淀的研究非常少，尤其是rtp处理过程中重掺硼硅单晶中氧沉淀的行为，目前还没有相关报道。
The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process , chemical etching , scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ) . a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed 本文通过化学腐蚀、光学显微镜、扫描电镜( sem ) 、透射电境( tem )等分析技术，对重掺砷硅单晶在单步退火工艺和内吸杂退火工艺中氧沉淀及诱生缺陷的形态，形核与热处理温度、时间的关系等进行了研究。
What ' s more , the amount of oxygen precipitates , dislocations in silicon and the orientation of the pressed surface also influence the fracture strength . stress - strain curves were studied at room temperature . in another experiment , brittle - ductile transition ( bdt ) of ncz and cz were studied for first time 常温下氮硅单晶( ncz )及普通硅单晶( cz )的断裂强度研究发现，氮的掺入提高了机械性能，并且不同氧沉淀量、位错的存在及不同晶向对硅材料机械强度也有较大影响。
An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions . thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6 . 5 + 017cm - 2 and , subsequently , the high temperature annealing 我们使用无质量分析器的离子注入机，模拟等离子体离子注入过程，成功地在该注入机上用水等离子体离子注入制备出了界面陡峭、平整，表层硅单晶质量好，埋层厚度均匀的薄型soi材料。
In this paper , the flow pattern defects ( fpds ) were revealed by secco etchant and their shape , distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ) . the relationship between etching time and the tip structure of fpds was also discussed . furthermore , by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar , the annihilation mechanism of fpds was discussed in this paper 本文将cz硅单晶片在secco腐蚀液中择优腐蚀后，用光学显微镜和原子力显微镜对流动图形缺陷( flowpatterndefects , fpds )在硅片中的形态、分布及其端部的微观结构进行了仔细地观察和研究，并讨论了腐蚀时间对fpds缺陷端部结构的影响；本文还通过研究ar气氛下快速退火( rapidthermalannealing , rta )对fpds缺陷密度的影响，初步探讨了fpds的消除机理。
We consider that the complexes of bmon ( m , n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling . therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation 在实验事实的基础上，我们认为在重掺硼硅单晶生长过程中， bmon ( m , n 1 )复合体或掺b引起的点缺陷能在晶体冷却过程中的较高温度阶段形成，且在随后的退火过程中能稳定存在，作为氧沉淀形核的核心，从而促进了氧沉淀，减小了大直径硅单晶中void缺陷的尺寸，增加其密度。
